查询词典 silicon

There is a protectivecoating of silicon dioxide on the silicon carbide.

在硅碳棒表面有一层二氧化硅保护涂层。

The article is carrier with grain of 2 oxidation silicon, use ultrasonic chemistry silver-gilt method, preparation gives silver / 2 oxidation silicon is compound grain, undertook token of silver-colored content analysis and XRD, SEM to the product, studied the performance fighting bacterium of compound grain mainly.

本文以二氧化硅颗粒为载体，利用超声波化学镀银方法，制备出银/二氧化硅复合颗粒，并对产品进行了银含量分析和XRD、SEM表征，重点探究了复合颗粒的抗菌性能。

Solar silicon crystal growing furnace has two systems and three brands and all uses high performance CCD camera video vision sampling technology and PAC full automatic SCADA numerical control system of American Rockwell Automatic Co.,Ltd, and is suitable for 18/20/22 inch heat station and CZ method 6-8 inch IC circuit level and solar energy level silicon single crystal ingot.

硅单晶生长炉具有两大系列三个品种，全部采用高性能CCD影像视觉采集技术和美国Rockwell Automation公司PAC全自动SCADA数字控制系统，适用于18/20/22英寸热场和直拉法拉制6～8英寸电路级和太阳能级硅单晶棒。

A new mini spectrophotometer was developed by adopting micro-silicon-slit and micro-silicon-fixer, which are based on MEMS technology.

研制出了一种采用微硅片对准技术和微硅片狭缝的新型微型分光光度计。

Study of the formation of porous silicon and metal sputter deposition on the porous silicon is performed.

对多孔硅膜的性能、制备工艺及多孔硅膜表面金属淀积工艺进行了研究。

Because of noise and variability, however, the wiring was not perfect: terminals of neighboring cells in the silicon retina did not end up next to one another in the silicon tectum .

然而，由于杂讯与变异性的关系，这个连线并不完美，因为矽视网膜毗邻细胞的末梢，并不会紧邻出现在矽顶盖。

The main products of our company are LED-column type digital display transmitter, alarm display converter, polling system alarm instrument, intellectual adjusting instrument, flux integrating controller, Q,D instrument, rack-mounted, wall-mounted, clamp type instruments, flashing alarm instrument, three-phase controllable silicon temperature controller, diffused silicon pressure/fluid level transmitter, capacitance voltage/pressure transmitter, thermocouple, thermo-resistance, bimetal thermometer, onsite thermal calibration devices, automation device.

公司主要生产光柱数字式显示变送仪、显示变送报警仪、巡检变送报警仪、智能调节仪、流量积算控制仪、Q、D型操作器、架装式、墙挂式、卡式仪表、闪光报警器、三相可控硅微处理温度控制柜、扩散硅压力/液位变送器、电容式差压/压力变送器、热电偶、热电阻、双金属温度计，现场热工校验装置、自动化成套设备，可广泛地应用于炼油、化工、建材、轻工、冶金、纺织等行业的温度、压力、流量、液位等参数的自动化监测和控制。

OBJECTIVE: To prepare silicon rubber/amikacin-OMMT composite as an antimicrobial composite catheter, to test its properties of thermology, mechanics and antibiosis, and to compare it with pure silicon rubber.

目的：在前期实验基础上制备丁胺卡那－蒙脱土／硅橡胶片抗菌复合导尿管材料，测试其相关热学、力学性能以及抗菌性能，并与全硅橡胶材料相比较。

Korea put the company at electric power control device - the general type STR (thyratron thyristor power controller) CPU upgrade to system memory type, and early in 2003 to develop cutting-edge new product type constant current, constant voltage type collectively referred to as STR (may silicon-controlled thyristor power controller) the inherent brand. In 2000 to develop the motor starting device - soft starter motor new products and the inherent SMC brand available at the area of power control both at home and abroad alike. Market in 2000 and 2002 patent SSC (packaged solid-state thyratron power controller), as well as sales from the company since its inception back filter with Pulse Timer and other products in the same trade firmly occupy The largest market. Also in 2002 the development of the supply of silicon wafer characterization equipment and sub-Plasma Ion Plating with the most cutting-edge power supply devices and so on, so if the company has high-speed development.

本公司在韩国把电炉电力控制装置-一般型STR升级为CPU系统内存型，与2003年初新开发的尖端产品恒电流型、恒电压型统称为STR 这一固有品牌。2000年开发电动机启动装置-电动机软启动器新产品并以SMC这一固有品牌面市，在电力控制领域受到国内外的一致好评。2000年面市并2002年取得专利的SSC(封装固态闸流功率控制器)，还有从公司创立初期销售至今的 back filter 用 Pulse Timer等产品在同行业中牢牢占据着最大的市场。2002年又开发供应硅wafer分段定性装备及Plasma Ion Plating用最尖端动力供应装置等，因此公司具备了高速发展的依据。

In this thesis, the heterojunction with intrinsic hydrogenated amorphous silicon thin layer ( heterojunction with intrinsic thin layer: HIT) solar cells are investigated. The solar cell structure of p/i/n are fabricated. The substrate is a typical 4-inch n-type wafer with (100) crystal orientation, 1~10 ohm-cm and about 525 μm thickness. The p and i a-Si:H layers are deposited by a 13.56 MHz plasma enhanced chemical vapor deposition. The i a-Si:H layers are especially deposited by pulse-wave modulation plasma technique with fixed plasma turn-off time toff = 10 ms and changed plasma turn-on time ton= 10 to 40 ms to selectively control the different silicon to hydrogen bonding configurations. The effect of various Si:H bonds on the performance of HIT solar cells are explored.

中文摘要本论文针对异质接面薄本质层(heterojunction with intrinsic thin layer： HIT)太阳电池进行研究，采用一般典型四英吋晶向为(100，厚度约为525 μm，电阻率约为 1~10 ohm-cmn型矽晶圆为基板，制作p/i/n太阳电池，p及i层薄膜以13.56 MHz电浆加强化学气相沈积，i层并采用脉波调变电浆技术，在固定电浆关闭时间toff = 10 ms及改变电浆开启时间由ton = 10 ms 至40 ms条件下制作具有不同矽氢键结微结构的氢化非晶矽薄膜以探讨不同矽氢键结对太阳电池性能的影响。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。