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silicon相关的网络例句

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与 silicon 相关的网络例句 [注:此内容来源于网络,仅供参考]

Polycrystalline silicon is a kind of form of monatomic silicon.

多晶硅是单质硅的一种形态。

In electric character, the conductivity of polycrystalline silicon crystal is far less prominent than monatomic silicon, even without any conductivity.

例如,在力学性质、光学性质和热学性质的各向异性方面,远不如单晶硅明显;在电学性质方面,多晶硅晶体的导电性也远不如单晶硅显著,甚至于几乎没有导电性。

An array of permalloy core solenoids is micromachined as microactuators on (100) silicon wafer. Then anisotropic etching of silicon in KOH solution forms the U-grooves beside the microactuators. The micromachining difficulties from the coexistence of 3-D MEMS devices and deep grooves on chip are overcome successfully. Then two fibers and permalloy piece are assembled onto the wafer together with the microstructures finishing the prototype of the new type MEMS VOA. Third, the inductance, resistance and Q value of the microfabricated solenoids are measured in the frequency range of 1-40 MHz.

第二,新开发了使用SU-85的正胶、负胶复合微加工工艺,在(100)硅片上加工了新型可变光衰减器的铁芯MEMS螺线管型电磁微执行器阵列;用KOH水溶液对(100)硅片进行湿法刻蚀,在电磁微执行器旁边微加工了V形槽结构组合,开发了单片集成三维MEMS器件和深槽的微加工关键技术;然后经过微装配制作出了电磁驱动的光纤偏移型MEMS可变光衰减器的样机。

Temperature characteristic of the silicon photocell influences temperature drifting of the instrument which uses the silicon photocell, including the measurement stability, the control precision and so on.

硅光电池的温度特性将关系到应用光电池的仪器设备的温度漂移,影响到测量稳定性及控制精度等主要指标。

Femtosecond pulsed laser ; pump-probe ; silicon ; silicon photoelectric detector; damage threshold

飞秒激光;泵浦-探针;硅;硅光电探测器;失效阈值

It is the primary raw material for making silicon polished plate, solar energy battery and high purity silicon products. It is also the important foundation for the development of information and new energy industries.

它是制造硅抛光片、太阳能电池及高纯硅制品的主要原料,也是发展信息产业和新能源产业的重要基石。

A common heating oxidation device(fig.1)is to place a silicon plate in a quartz crystal glass reaction chamber. In the reaction chamber, a electric resistant wire heating device heat up the chamber to a certain temperature(usually, the temperature is 900~1200℃. In a special condition, it can be descended to under 600℃). When oxygen or water vapour pass through the chamber(typical gas flow speed is 1cm/s). A chemical reaction is generated on surface of the silicon plate.

常用的热氧化装置(图1)将硅片置于用石英玻璃制成的反应管中,反应管用电阻丝加热炉加热一定温度(常用的温度为900~1200℃,在特殊条件下可降到600℃以下),氧气或水汽通过反应管(典型的气流速度为1厘米/秒)时,在硅片表面发生化学反应

In this thesis, Node-Area Method, a new method to modeling Microfabrication of single silicon, is firstly introduced. This method is based on ESHAPE method and CA method. It takes advantage of both methods, and meanwhile, avoiding lower simulation precision of the former and lower computation efficiency of the latter. A new software is developed to simulate silicon bulk micromachining process. It can be applied to redisplay the process of MEMS Manufacture to help designer to design complex MEMS structures.

本论文引入一种新的单晶硅的加工建模方法——节点-区域法,它是借鉴原有仿真建模方法Eshape法和CA法的优点,并将两者适当的结合,克服Eshape法仿真精度低和CA法计算效率低的不足,开发出一个新的体硅加工工艺过程仿真软件,应用于设计和制备复杂的MEMS结构件,来更好的再现MEMS实际加工工艺过程,辅助MEMS设计人员设计开发复杂的微器件。

Xinjiang has high-quality, large-reserve, lower-price silicon ore and salt mine, which can produce large amount of high-purity industrial silicon.

新疆有着品质好、储量大、价格较低的硅石矿和盐矿,可大量生产高纯度工业硅。

Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.

掺杂是制备硅纳米线半导体器件的一个有效手段。

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