查询词典 silicon wafer

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Now people attach importance to the cleaning of silicon grinded wafer. There are a lot of carborundums and silicon powders on the wafer surface because grinded wafer are grinded by carborundum and corresponding depth are remove in the sequence of grinding. After grinding there are plenty of carborundums and silicon powders enchase in the damaged layers. So there are many difficulties in later processes.

半导体硅单晶衬底加工工业中最受重视是硅磨片的清洗，由于硅磨片是用金刚砂研磨的，研磨过程中又要去除相应的厚度，所以刚加工的磨片表面附着着大量的金刚砂和研磨下来的硅粉，而且还有相当一部分金刚砂和硅粉镶嵌到破损层里面，这给后续的清洗工作带来了困难。

This one looks rather like a sponge: thousands of parallel channels perforate a thin wafer of silicon.

这个棘齿看起来比较像纱布：数以千计的平行孔道贯穿一片薄薄的矽晶圆。

The method is to coat a wafer of silicon with a protective layer of silicon dioxide.

其方法是往硅片上涂上一层二氧化硅防护膜。

In this thesis, the heterojunction with intrinsic hydrogenated amorphous silicon thin layer ( heterojunction with intrinsic thin layer: HIT) solar cells are investigated. The solar cell structure of p/i/n are fabricated. The substrate is a typical 4-inch n-type wafer with (100) crystal orientation, 1~10 ohm-cm and about 525 μm thickness. The p and i a-Si:H layers are deposited by a 13.56 MHz plasma enhanced chemical vapor deposition. The i a-Si:H layers are especially deposited by pulse-wave modulation plasma technique with fixed plasma turn-off time toff = 10 ms and changed plasma turn-on time ton= 10 to 40 ms to selectively control the different silicon to hydrogen bonding configurations. The effect of various Si:H bonds on the performance of HIT solar cells are explored.

中文摘要本论文针对异质接面薄本质层(heterojunction with intrinsic thin layer： HIT)太阳电池进行研究，采用一般典型四英吋晶向为(100，厚度约为525 μm，电阻率约为 1~10 ohm-cmn型矽晶圆为基板，制作p/i/n太阳电池，p及i层薄膜以13.56 MHz电浆加强化学气相沈积，i层并采用脉波调变电浆技术，在固定电浆关闭时间toff = 10 ms及改变电浆开启时间由ton = 10 ms 至40 ms条件下制作具有不同矽氢键结微结构的氢化非晶矽薄膜以探讨不同矽氢键结对太阳电池性能的影响。

For precise measurement of substrate temperature, a equipment for calibrating the infrared emissivities of different materials has been set up and the formula for calculating the infrared emissivity of silicon wafer is also established.

为对金刚石薄膜MPCVD过程中的基片温度进行精确测量，自行研制了基片材料红外发射率的标定装置，并建立了计算单晶Si红外发射率的数学表达式。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。