查询词典 silicon wafer

This investigation was prepared MCM-41 catalyst films on silicon wafer in ammonia media, using tetraethyl orthosilicate as a precursor and cetyltrimethylammonium bromide as a surfactant.

中文摘要本研究以四乙基氧矽溶液为矽酸盐的来源，溴化十六烷基三甲基铵盐为界面活性剂，在氨水的环境下，制备MCM-41触媒薄膜於矽晶片上。

The psammoma body mineralization in meningioma is a common type of mineralizationThe analysis of the mineral composition may provide some support information in finding the reason of happening and developing of the diseaseThis paper focuses on the concentric layered structure mineralization in meningiomas, using mineralogical methods, such as HRSEM, ESEM, EDAX, EPMA, HRTEM, XRD and FTIR to systematically investigate the mineral composition, structure and shape of the minerals in psammoma bodies in meningiomasWe have devised a method for preparing the silicon wafer sheet which was used for the ESEM insitu observations and analysisIn this study, we first got the ESEM and HRTEM images of the initial mineralization phase of meningiomasThese images showed that in the early stage of psammoma body mineralization in meningiomas, many mineralized balls composed of octocaphosphate were precipitated on the collagen fibersThese balls continued to grow and aggregate, and were gradually hydrolyzed to become the dahlliteThe continued development of mineralization resulted in the mineralized collagen fibersThe study revealed that the concentric layered structure of the psammoma bodies in meningiomas is formed by the spiral arrangement of the mineralized collagen fibers on which the mineralized grains precipitated.

砂粒体矿化是脑膜瘤中常见的矿化类型，对其形成机理和矿物成分的分析可能会对肿瘤发生、发展的研究提供辅助信息。该研究选取人脑膜瘤中的砂粒体矿化作为研究对象，采用偏光显微镜、环境扫描电镜及能谱、X射线衍射仪、高分辨透射电镜和电子探针对样品的形貌、结构和成分进行测试分析，并以此为依据探讨脑膜瘤中砂粒体的形成机理。研究结果表明矿化的初期为沉淀在胶原纤维上的矿化小球，成分为磷酸八钙；矿化小球不断生长聚集，并逐步水解为碳羟磷灰石晶体，矿化的不断发展致使胶原纤维也发生矿化。砂粒体的同心层状构造是由螺旋状排列的矿化胶原纤维及沉淀在其上的矿化颗粒组成的集合体，而不是多数研究中所述：砂粒体是以坏死细胞残骸为中心由内至外的同心层沉淀。

Unoriented ZnO nanowires are fabricated either on the surface of silicon wafer or at the tip of needle-like tungsten by vapor-phase deposition. Both the plane field emission and tip field emission of ZnO nanowires are studied using a field emission microscope.

运用气相沉积方法分别在硅片表面和钨针尖上制备了非取向生长的ZnO纳米线，并通过场发射显微镜研究了纳米线样品的平面场发射特性和针尖场发射特性。

Often called planar transistors, they are built on the surface of a silicon wafer by using a manufacturing process that precisely deposits and then etches away different insulating, conducting and semiconducting materials with such precision that the industry is now approaching the ability to place individual molecules.

通常被称为「平面电晶体」，运用一个将电晶体精确放置在晶片的表面，蚀刻掉不同绝缘、导体和半导体材料的制程，以此精密技术业界将能够在晶片上面放置个别分子大小的材料。

Often called planar transistors, they are built on the surface of a silicon wafer by using a manufacturing process that precisely deposits and then etches away different insulating, conducting and semiconducting materials with such precision that the industry is now approaching the ability to place individual molecules.

当今制造微处理器和记忆晶片的电晶体有数抳鹜荂C通常被称为「平面电晶体」，运用一个将电晶体精确放置在晶片的表面，蚀刻掉不同绝缘、导体和半导体材料的制程，以此精密技术业界将能够在晶片上面放置个别分子大小的材料。

The isothermal anneal at an elevated temperature of 1150℃ ramped up from a starting temperature （600-1000℃） was employed to enable the growth of the grown-in oxygen precipitates that are larger than the critical size at the starting temperature. Flourier transformation infrared spectroscopy and scanning infrared microscopy are used to measure the amount of precipitated oxygen and the oxygen precipitate density in a 300mm nitrogen-doped Czochralski silicon wafer, respectively.

文章摘要：采取从某一温度（600-1000℃）开始缓慢升温至高温（1150℃）并保温若干时间的方法，使得直拉si片中大于起始温度对应的氧沉淀临界尺寸的那一部分原生氧沉淀得以长大，然后通过傅里叶红外光谱测量氧浓度变化以及利用扫描红外显微术测量氧沉淀密度。

During the process of device fabrication, the oxygen precipitates and their induced secondary defects in the bulk of silicon wafer can act as the effective gettering sites for the heavy metals.

在器件制造的过程中，硅片中产生的氧沉淀及其诱生缺陷可以有效地清除硅片表面的有害金属杂质，从而有利于提高器件的成品率。

Lab 1 apparatus: hot plate heater with silicon wafer, connected to a temperature probe.

实验一装置：加热板与矽晶圆连接至感温棒。

Double sided polishing process has become a main machining method for silicon wafer finishing process, but it is difficult to get ultra-smooth surface with the very stringent machining conditions.

双面抛光已成为硅晶片的主要后续加工方法，但由于需要严格的加工条件，很难获得理想的超光滑表面。

Because of diffraction and other physical phenomena during mask making, optical lithography and etching under Sub-Wavelength Lithography, the mask patterns are not the same as printed shapes on silicon wafer.

在亚波长光刻下，由于掩模制造、光刻和蚀刻过程中光的衍射及其它物理现象，导致掩模图形和硅片表面实际印刷图形之间不再一致。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。