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silicon wafer相关的网络例句

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The fabrication processes for nano-silicon-tips using a (100) single crystal silicon wafer by the anisotropic wet etching in the KOH etchant were designed. Based on the experiment and the model of {411} crystal planes, the crystal planes of silicon tips were analyzed. Through discussing the effect of the mask direction on tip shapes, the process parameters to get high aspect ratio nano-silicon-tips were achieved.

设计了硅尖制备的工艺流程,采用KOH溶液湿法各向异性腐蚀(100)单晶硅的方法制备硅尖,根据实验结果和{411}晶面模型,分析了硅尖侧壁的组成晶面,讨论了掩模偏转方向对硅尖形状的影响,得到了制备高纵横比纳米硅尖的工艺参数。

The fabrication processes for nano-silicon-tips using a (100) single crystal silicon wafer by the anisotropic wet etching in the KOH etchant were designed.Based on the experiment and the model of {411} crystal planes,the crystal planes of silicon tips were analyzed.

设计了硅尖制备的工艺流程,采用KOH溶液湿法各向异性腐蚀(100)单晶硅的方法制备硅尖,根据实验结果和{411}晶面模型,分析了硅尖侧壁的组成晶面,讨论了掩模偏转方向对硅尖形状的影响,得到了制备高纵横比纳米硅尖的工艺参数。

Five novel torsion-mirror optical actuators including double-beam thickness differential structure with single torsional axis, double flexible folded-beam structure with single torsional axis, double-beam vertical torsion comb structure with single torsion axis, four-beam differential compound-micromirror structure with double torsional axis and the combined structure of the four basis forms above, are brought forward. All of these devices could be fabricated by the same silicon micromachining process we have developed. The deformation compensation design with local enhancement for the thin torsional beam which is the key structure of these devices is also put forward to improve the reliability. The three-dimension solid model and two-dimension reduced order model of the torsion-mirror optical actuator are established and then the numerical simulations for evaluating the device characteristics of the statics, dynamics, electrostatic field, mechanical and electrostatic coupling, fluid and solid coupling are carried out to optimize the structure design. Furthermore, three optical fibre clamping structures which could be integrated monolithicly are designed and analyzed to improve the optical coupling capability. 4. Three flexible process flows combined with bulk silicon micromachining and surface silicon micromachining are brought forward to fabricate these novel single-crystal silicon or polysilicon torsion-mirror optical actuators by using the same lithography masks for both SOI wafer and regular silicon wafer. A series of important process experiments are carried out to optimize the process parameters and the process flows. Some novel and typical process phenomena which occurred during the microfabrication are analyzed and then the corresponding solutions are put forward. 5. A MEMS dynamic testing system which exploit blur image synthetic technique, stroboscopic image matching technique, stroboscopic mirau microscopic interferometry technique and microscopic laser dopper vibrometer technique is set up to measure three-dimension and six-freedom micro motions of any MEMS devices with nanometer resolution.

在对硅微机械扭转镜光致动器的光机电特性系统地理论研究的基础上提出了硅微机械扭转镜光致动器的结构设计准则。3、提出了单轴双梁厚度差分结构、单轴双柔性折叠梁结构、单轴双梁垂直扭转梳齿结构、双轴四梁差动复合微镜结构以及以上四种基本结构组合后的衍生结构等五种工艺加工技术兼容的新型的硅微机械扭转镜光致动器,对器件关键结构薄厚度、高耐疲劳扭转梁进行了局部加强的变形补偿设计,建立了器件的三维实体模型以及两维降阶模型,对提出的新结构硅微机械扭转镜光致动器进行了系统的静力学、动力学、静电场、力电耦合和流体固体耦合的建模仿真与优化设计,同时设计并分析了三种可实现单芯片集成的弹性光纤定位夹紧结构。4、提出了组合体硅微加工技术与表面硅微加工技术、兼容同一套光刻版图、可分别基于SOI 晶片和普通Si 晶片、适应于制造提出的各种新结构单晶硅和多晶硅硅微机械扭转镜光致动器的三套柔性加工工艺流程,开展了一系列重要工艺步骤的单项工艺试验,对工艺流程与工艺参数进行了优化,针对加工过程中出现的具有普遍意义的典型工艺问题进行了讨论和分析,并提出了解决方法。5、创新性地将模糊图像合成技术、频闪图像匹配技术、频闪Mirau 显微干涉技术与显微激光多普勒测振技术有机结合,建立起了一套周期运动测量与瞬态运动测量相结合、单点运动测量与全视场运动测量相结合、满足不同MEMS 器件各种动态测试要求的集成的MEMS 三维六自由度微运动精密测量系统。

An array of permalloy core solenoids is micromachined as microactuators on (100) silicon wafer. Then anisotropic etching of silicon in KOH solution forms the U-grooves beside the microactuators. The micromachining difficulties from the coexistence of 3-D MEMS devices and deep grooves on chip are overcome successfully. Then two fibers and permalloy piece are assembled onto the wafer together with the microstructures finishing the prototype of the new type MEMS VOA. Third, the inductance, resistance and Q value of the microfabricated solenoids are measured in the frequency range of 1-40 MHz.

第二,新开发了使用SU-85的正胶、负胶复合微加工工艺,在(100)硅片上加工了新型可变光衰减器的铁芯MEMS螺线管型电磁微执行器阵列;用KOH水溶液对(100)硅片进行湿法刻蚀,在电磁微执行器旁边微加工了V形槽结构组合,开发了单片集成三维MEMS器件和深槽的微加工关键技术;然后经过微装配制作出了电磁驱动的光纤偏移型MEMS可变光衰减器的样机。

Korea put the company at electric power control device - the general type STR (thyratron thyristor power controller) CPU upgrade to system memory type, and early in 2003 to develop cutting-edge new product type constant current, constant voltage type collectively referred to as STR (may silicon-controlled thyristor power controller) the inherent brand. In 2000 to develop the motor starting device - soft starter motor new products and the inherent SMC brand available at the area of power control both at home and abroad alike. Market in 2000 and 2002 patent SSC (packaged solid-state thyratron power controller), as well as sales from the company since its inception back filter with Pulse Timer and other products in the same trade firmly occupy The largest market. Also in 2002 the development of the supply of silicon wafer characterization equipment and sub-Plasma Ion Plating with the most cutting-edge power supply devices and so on, so if the company has high-speed development.

本公司在韩国把电炉电力控制装置-一般型STR升级为CPU系统内存型,与2003年初新开发的尖端产品恒电流型、恒电压型统称为STR 这一固有品牌。2000年开发电动机启动装置-电动机软启动器新产品并以SMC这一固有品牌面市,在电力控制领域受到国内外的一致好评。2000年面市并2002年取得专利的SSC(封装固态闸流功率控制器),还有从公司创立初期销售至今的 back filter 用 Pulse Timer等产品在同行业中牢牢占据着最大的市场。2002年又开发供应硅wafer分段定性装备及Plasma Ion Plating用最尖端动力供应装置等,因此公司具备了高速发展的依据。

ABSTRACT The preparation of photoluminescent porous silicon wafer and the seperation of photoluminescent porous silicon films from silicon ...

本文从发光多孔硅的制备出发,通过系统的分析测试,对多孔硅的发光机理进行了探讨。

ABSTRACT The preparation of photoluminescent porous silicon wafer and the seperation of photoluminescent porous silicon films from silicon wafer were reported in this paper.

本文从发光多孔硅的制备出发,通过系统的分析测试,对多孔硅的发光机理进行了探讨。

By sandwiching a layer of Teflon between the silicon wafer and the ground plane, the novel micromachined shortened stacked patch antenna printed on high index wafer has superior performance over those of traditional design, while its bandwidth has been increased by as much as 8.6%, and its length of patch has been miniaturized to only an eighth wavelength.

本文提出了一种在高介电常数上用微机械工艺制作的短接层叠式贴片天线,该天线在硅片和接地板间夹一层Te flon ,这样天线的性能得到了提升,相对带宽增加到 8.6 %,而几何尺寸仅为波长的 1 8。

By sandwiching a layer of Teflon between the silicon wafer and the ground plane, the novel mi-cromachined shortened stacked patch antenna printed on high-index wafer has superior performance o-ver those of traditional design, while its bandwidth has been increased by as much as 8.6 %, and itslength of patch has been miniaturized to only an eighth wavelength.

传统的半波天线尺寸较大,在小型通信设备中使用会出现许多问题。本文提出了一种在高介电常数上用微机械工艺制作的短接层叠式贴片天线,该天线在硅片和接地板间夹一层Tef-lon,这样天线的性能得到了提升,相对带宽增加到8.6%,而几何尺寸仅为波长的1/8。

Silicon wafer with low silicon steel sheet of 2.8% below the high-silicon-silicon content was 2.8%-4.8%, both in actual use there is no strict boundaries, commonly used to create large-scale high-silicon electrical.

矽钢片低硅片含硅2.8%以下,高硅片含硅量为2.8%-4.8%,两者在实际使用中并无严格界限,常用高硅片制造大型电机。

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