查询词典 silicides

As a result, the technique of metal silicides for poly gate and source/drain has been developed to reduce the contact resistance and the parasitic junction resistance as well.

因此，金属矽化物的技术应用在源极及汲极已经被开发用来同时降低接触电阻及接面寄生电阻。

TEM observation showed t hat the depth of continuos layer of Mo silicides was about 80nm

透 射电子显微镜的观察表明，连续硅化钼薄层厚度为80nm。

The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes.

用于增强和取代多晶硅的难熔金属和难熔金属硅化物通常是用物理蒸发沉积工艺沉积的。

Nanocrystalline titanium silicides were synthesized by co-reducing silicon tetrachloride and titanium tetrachloride with different metal reductants at 650℃.

具体内容如下： 1、以硅粉和VCl〓为原料、以金属钠为还原剂，在650℃的氯化镁和氯化钠组成的熔盐中，通过还原硅化法成功合成了具有六方相结构的颗粒平均直径约为35纳米的VSi〓纳米材料，产物在1000℃时具有很好的抗氧化稳定性。

After hot pressing at 1800℃, carbides and silicides were formed in interfacial layers because W, Ta reacted with SiC.

在1800℃热压烧结过程中，金属W、Ta与SiC反应生成了碳化物与硅化物，未能形成塑性金属层。

Zr can partially replace Ti in the silicides because the free energy of formation of Zr-Si bonds is greater than that of Ti-Si bonds and both Zr and Ti elements are in group Ⅳa of periodic table.

由于Zr-Si粘合体的自由能大于Ti-Si粘合体的，Zr原子更多地溶于硅化物中，替代Ti原子形成新的硅化物〓。

Therefore, metal silicides owning a perfect interfacial property with Si above an ultra-shallow junction is considered as a critical module toward the realization of nano-scale CMOS.

所以，是否具有与矽基材完好介面特性的金属矽化物，是在制造奈米尺寸的元件时重要的制程考量。

Therefore, metal silicides owning a perfect interfacial property with Si above an ultra-shallow junction is considered as a critical module toward the realization of nano-scale CMOS.

所以，是否具有与矽基材完好介面特性的属矽化物，是在制造米尺寸的元件时重要的制程考。

The FP-LMTO and the linear response LMTO methods are used to calculate the electronic structure, phonon spectra and electron-phonon interaction of ternary silicides MAlSi with M=Ca, Sr and Ba.

应用全势能的LMTO方法和线性响应的LMTO方法计算了三元硅化物MAlSi的电子结构、声子谱及电-声子相互作用。

In this thesis, the films and nanowires of titanium silicides were prepared on the substrate by atmosphere pressure chemical vapor deposition, using SiH4 and TiCl4 as precursors.

本论文采用常压化学气相沉积法以SiH4和TiCl4为前驱体在硅板/玻璃衬底上一次性制备出大面积硅化钛薄膜/纳米线复合结构，运用XRD、SEM、TEM等手段对样品的结构和性能进行了测试和分析。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。