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1 When thickness of the short pitch or long neck flange straight side of Type B doesn't equal to the cylinder thickness connected with it: If cylinder thickness is not larger than 10mm, and thickness difference with short pitch or long neck straight side is larger than 3mm; If cylinder thickness is larger than 10mm, and thickness difference with short pitch or long neck straight side is larger than 30% of the cylinder thickness or 5mm, Type B flange should take the slope value 1: 3, and the long neck flange should be thinned according to Chart 1, or have pile welding on the end of butt welding seam to achieve transition.

6.5.1 乙型法兰的短节厚度或长颈法兰的直边厚度与其相联接的圆筒厚度不等时：若圆筒厚度不大于10mm，且与短节或长颈直边厚度差超过3mm；若圆筒厚度大于10mm，且与短节或长颈直边厚度差大于圆筒厚度的30%或超过5mm时，乙型平焊法兰应按斜率1：3，长颈对焊法兰按图1虚线削薄，或者在对接焊缝的筒体端部按图2堆焊过渡。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

At length I spy'd a little Cove on the right Shore of the Creek, to which with great Pain and Difficulty I guided my Raft, and at last got so near, as that, reaching Ground with my Oar, I could thrust her directly in, but here I had like to have dipt all my Cargo in the Sea again; for that Shore lying pretty steep, that is to say sloping, there was no Place to land, but where one End of my Float, if it run on Shore, would lie so high, and the other sink lower as before, that it would endanger my Cargo again: All that I could do, was to wait 'till the Tide was at highest, keeping the Raft with my Oar like an Anchor to hold the Side of it fast to the Shore, near a flat Piece of Ground, which I expected the Water would flow over; and so it did: As soon as I found Water enough, for my Raft drew about a Foot of Water, I thrust her on upon that flat Piece of Ground, and there fasten'd or mor'd her by sticking my two broken Oars into the Ground; one on one Side near one End, and one on the other Side near the other End; and thus I lay 'till the Water ebb'd away, and left my Raft and all my Cargo safe on Shore.

最后，我终于在小河的右岸发现一个小湾。我费尽艰辛，好不容易把木排驶到最浅的地方。我用桨抵住河底，尽力把木排撑进去。可是，在这里，我几乎又一次险些把货物全都倒翻在水里。这一带河岸又陡又直，找不到可以登岸的地方。如果木排一头搁浅在岸上，另一头必定会像前次那样向下倾斜，结果货物又有滑向水里的危险。这时，我只好用桨作锚，把木排一边固定在一片靠近河岸的平坦的沙滩上，以等待潮水涨高，漫过沙滩再说。后来，潮水果然继续上涨，漫上沙滩，等水涨得够高了，我就把木排撑过去，因为木排吃水有一尺多深。到了那儿，我用两支断桨插入沙滩里，前后各一支，把木排停泊好，单等潮水退去，就可把木排和货物品平安安地留在岸上了。

After all of these six changes have been carried out on one side of the palate,the operated side becomes completely relaxed.It can be moved both posteriorly and medially to lengthen the side of the palate and to contact with the cleft margin of the non-operated side without tension.Obviously,there is no need to perform the same surgical maneuvers on the other side again.The cleft is then closed by layers.

手术时，在腭部的一侧作完改变的六项操作以后，手术侧的腭部即彻底松弛，可以充分后退，增加该侧腭部先天不足的长度，并随意向近中侧移动，与对侧的裂缘接触，不需要在对侧再作同样的手术操作，即可将裂隙缝合。

The constant nutritional arteries of the great saphenous vein-saphenous nerve on the medial foot: Perforator at medial side of the tendon of the tibialis anterior ,it is （2.27±0.43）cm distal to the intermalleolar line .it passes across the medial side of the tendon of the tibialis anterior and pierces the deep fascia between the upper and lower bundle of the inferior extensor retinaculum with a diameter of （0.72±0.04）mm;The length of it after piercing the deep fascia is （7.3±0.6）mm,It has an emerging rate of 95%; Perforator between tendons ,it is （3.02±0.39）cm distal to the intermalleolar line;it pierces the deep fascia between the tendons of tibialis anterior and extensor digitorum longus with a diameter of (0.57±0.06)mm ;The length of it after piercing the deep fascia is （7.4±0.6）mm .It has an emerging rate of 94%; A constant distal fascial perforator pierces the deep fascia between abductor hallucis muscle and medial side of first metatarsal bone （1.97±0.23）mm distal to the first metatarsophalangeal joint with a diameter of (0.50±0.03)mm.

足内侧大隐静脉-隐神经营养血管近端来自内踝前动脉较为恒定，外径较大的穿支有：踝间线远端（2.27±0.43）cm，经胫骨前肌腱内侧、伸肌下支持带上、下束间穿出，外径(0.72±0.04)mm ，穿出深筋膜的长度为（7.3±0.6）mm，出现率为95%；踝间线远端（3.02±0.39）cm，经胫骨前肌腱与趾伸肌腱穿出，外径(0.57±0.06)mm，穿出深筋膜的长度为（7.4±1.2）mm ，出现率为94%；3远端来自交通支最为恒定，外径较大的穿支于踇展肌与第一跖骨内侧缘之间穿出深筋膜，距第一跖趾并节近端（1.97±0.23）cm，直径（0.50±0.03）mm，穿出深筋膜的长度为（6.5±0.5）mm，出现率为100%。

The crushed rock in the side abutment weakens the side restriction while the side wall and the apron strengthen the side restriction. The analysis showed a new stress distribution with automatic modification and less stress concentration when the side restriction is weakened by using crushed rock in the abutment.

结合某碾压混凝土拱坝的拱座，在减弱和加强侧约束时，即在坝体部分高程的破碎软弱岩石减弱坝体侧约束以及坝体下游边墙和护坦增强坝体侧约束的情况下，研究侧约束对于坝体应力和位移的影响。

The tire cord fabric layer is provided with an edge wound around the core of the bead, and the wound part is provide with a base part and a radial outer part, wherein, the base part extends towards to the axial outer side from the inner side of the core of the bead along the core of the bead; and the radial outer part extends towards to inner side axially on the radial outer side of the core of the bead.

胎体帘布层具有绕胎圈芯缠绕的边缘，使得缠绕部分具有基部和径向外部，基部沿着胎圈芯从胎圈芯的轴向内侧延伸至其轴向外侧，并且径向外部在胎圈芯的径向外侧上轴向朝内延伸。

To solve the problem, this animal experimentation was designed as following: The maternal sural nerve as an allograft was connected with the upper trunk of the brachial plexus of the healthy side by end-to-side neurorrhaphy, with-the other stump was sutured with the terminal branches of musculocutaneous nerve of the affected side by end-to-end neurorrhaphy.

为解决以上难题，本实验设计了切取母体腓肠神经作为异体神经移植体，与健侧臂丛上干行端侧吻合，并移位于患侧肌皮神经终末支的手术方法。

The invention discloses a device for spreading machine docking with trucks, which consists of damping mechanisms installed on both side between the spreading machine and the roller; the damping mechanism consists of side plate 1, sliding block 2, flexible element 3, and shaft 4, the flexible element 3 is sleeved on the shaft 4 of which one end linked with spreading machine and the other with sliding block 2, side plate is on upper section of sliding block 2 and fixed on the machine, lower section of sliding block is linked with roller.

本发明公开了一种摊铺机与卡车对接缓冲装置，它为设置于摊铺机机身前端与推滚之间的左、右各一副阻尼机构(10)；所述阻尼机构(10)包括端板(1)、滑块(2)、弹性元件(3)和轴(4)，弹性元件(3)套于轴(4)上，轴(4)的一端与推铺机机身(5)相连，滑块(2)与轴(4)的另一端相连，端板(1)位于滑块(2)上段之外，并固定于推铺机机身(5)上，滑块(2)的下段与推滚(6)相接。

Josie指着这几张钱背面解释说:on the back side of 5 pound note depicts elizabeth fry'sface,she was a philanthropist in 19th century britain,the left side picture showing a scene with her reading in a charity campaign;the 10 pound note depicts mr.charles darwin who was an aturalist in 19 th century britain;the 50 pound note depicts sir.john houblon who was the first governor of the bank of england;the back side of his face is his house;as for the back side of 20 pounds,it depicting sir.edward elgar's face with aview of worcester cathedral,elgar was a famous composer in the world.

5镑背面描绘的是英国19世纪慈善家伊丽莎白弗雷的肖像，左侧是她参加慈善活动的图案；10镑钱描绘的是英国19世纪博物学家查尔斯达尔文；50镑钱描绘的是英格兰银行第一任董事约翰霍布伦，他肖像的后面是他的家；至于20镑钱，描绘的是爱德华埃尔加的脸和伍斯特大教堂埃尔加是著名的作曲家）

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新