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sic相关的网络例句
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The joining of graphite,ceramic SiC and C_f/SiC composites via preceramic silicone resin at high temperature(800~1400℃) is studied.

对先驱体硅树脂高温(800~1400℃)转化陶瓷接头连接石墨、S iC陶瓷及Cf/S iC复合材料进行了研究,着重对硅树脂固化裂解过程、硅树脂溶液浓度、裂解温度及惰性填料对连接性能的影响进行了探讨。

The reasonable adjustment of additive constituents of prefabricate SiC loaf can not only guarantee the steel infiltration, but also prevent the decomposition of SiC particles.

通过调整SiC预制体的添加物组配,可以既保证钢液的浸渗,又防止SiC粒子的分解。

The first section mainly introduced the rebus sic sicutibus principle concept and its historical evolution and the rationale, by its historical development process and in establishes in this principle process from its basic concept understanding the mainland legal system country and the English America legal system country to its rationale discussion and the dispute, causes us to understand what is the rebus sic sicutibus principle as well as world many countries must discuss this principle, as well as is discussing this principle time also has any type the viewpoint.

第一节主要介绍了情势变更原则的概念以及其历史沿革和理论基础,从其基本概念的理解以及其历史发展的过程和在建立这个原则过程中大陆法系国家和英美法系国家对其理论基础的探讨和争议,使我们明白到底什么是情势变更原则以及世界上的许多国家为什么要探讨这个原则,以及在探讨这个原则的时候又有着什么样的观点。

The phase makeup of composites was SiC, Al2O3, Al and Si. SiC grains were distributed as island in α-Al2O3 matrix, the residual metal phase with a netted structure was also distributed in the matrix.

预制体的存在明显缩短了熔融铝合金氧化生长的孕育期,降低了氧化生长速率,同时细化了组织,氧化产物以光滑方式生长。

In this paper, the oxidizing properties of SiC/SiC composite by Chemical Vapor Infiltration were investigated.

对用CVI法制备的SiC/SiC复合材料的氧化性能进行了研究。

In air atmosphere, Cu2O in molten Cu corrodes Si3N4/SiC quickly. In nitrogen atmosphere or some slipcover existing, Cu corrosion resistance of Si3N4/SiC is very excellent.

在空气介质中,Si_3N_4/SiC抗侵蚀性能较差;在氮气介质中或有覆盖剂保护时,陶瓷材料具有优良的抗侵蚀性能。

From the analysis of theory and technique character of ion-implantation and the energies, the implant range and straggle of nitrogen ions in 4H-SiC calculated by TRIM, the method to calculate the channel depth of 4H-SiC MESFET is present based on the energy diagram's analysis of implanted layer.

通过研究离子注入的理论和工艺特性,以及蒙特卡洛分析软件TRIM对氮离子注入4H-SiC的能量、深度和偏差等参数的分析,在注入层的能带理论分析的基础上,提出了计算离子注入4H-SiC MESFET器件的沟道深度的方法,以及离子注入工艺参数,包括能量、剂量的确定方法。

Using pin on disk tribometer, the influence of volume fraction and particle size of SiC on dry friction and wear properties of the SiC/Al composites were investigated.

采用无压浸渗法制备不同碳化硅粒度和体积分数的SiC/Al复合材料,利用销-盘摩擦磨损试验机考察了碳化硅的粒度和体积分数等对SiC/Al复合材料干摩擦磨损性能的影响,采用扫描电子显微镜观察磨损表面形貌并分析其磨损机理。

Unlike the LSD,the SIC-LSD Hamiltonian is not invariant undera unitary transformation among the occupied orbitals,which must be determined self-consistentlyfrom minimizing the SIC-LSD total energy.

与LSD近似不同,SIC-LSD近似的哈密顿量没有占据态的幺正变换不变性,单粒子态由SIC-LSD近似下的总能量极小决定。

Results show that the single-layer SiC coating with B2O3 is compacter than those with MgO and Al2O3. Different phases exist in the three different single-layer SiC coating.

SEM、EDS和XRD等结果分析表明,含有B2O3的单层SiC涂层最为致密,其次为Al2O3和MgO;并且这三种不同的单层SiC涂层中含有不同的相。

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