查询词典 sic

In this paper, we report the progress on energy band structure studies of wide-band-gap semiconductors in NSRL.

以GaN、SiC和ZnO为代表的宽带隙半导体材料，是继Si和GaAs之后的第三代半导体。

In this paper, the effects of factors like flotation、cooling velocity on distribution and microstructure of the material were studied under the condition of unidirectional and multidi〓tional solidification, an order of magnitude analysis was performad in order to understand the dynamics of an advancing solid/liquid interface behind a particle as well as the behavior of the particle in front of the interface, and a model of critical velocity for the pushing/engulfment transition of particles by the interface was built, the theoretic result gave a good explain to experimental one.

本文考察了在常规铸造和定向凝固条件下，浮力、冷却速度等因素对SiC颗粒分布以及材料组织的影响，分析了颗粒在凝固过程中的行为以及对界面的作用，建立了在胞状树枝晶凝固条件下枝晶对颗粒的推移/吞并临界速度模型，理论分析和实验结果基本一致。

Such a donor level will make it possible to realize effective room-temperature luminescence of erbium in semiconductor.

从计算结果看，在β-SiC中共掺Er和O是解决Er在Ⅳ族元素半导体中室温高效1.54μm光发射的可能途径。

The results not only provided ba- sic data for research of ejection escape in aviation and spaceflight,but can be applied to ergon...

此结果不但为航天航空弹射救生的研究提供了基础数据，也可以在人体工程学和运动生物力学等方面应用。

SiC thin films of large area were prepared successfully in a plasma-enchanced CVD reactor at room temperature, with silane and ethene used as raw materials and Ar as carrier gas.

采用射频等离子体增强的气相沉积法，以硅烷和乙烯为原料，在常温下成功的合成了碳化硅薄膜。

But the friars had the job to give shelter to more than 500 persons (the number seems a bit exaggerated) who had retired to the friary afraid of the incursions and who had occupied the cloister, the garden and the same Church, with every family having an individual tent sic!

但修士们必须提供庇护给为数超过五百的民众，那些害怕被袭击而逃到修院，在修道院、花园及教堂中工作的人，每个家庭有一顶独立的帐棚

It is an aid for the SiC furnace to become more powerful with a great economic and social value.

具有重要的经济和社会价值。

Oftware Description: About Sic Bo, This is an ancient Chinese game of chance.

ic Bo 这是一个进行中国古代游戏的机会。

The results of SRGID with different grazing incidence angles indicate that the crystal relaxation along the c-axis in ZnO thin film is not uniform.

通过计算得到ZnO薄膜的泊松比为0.504， ZnO薄膜与单晶6H-SiC衬底在平行于衬底表面a轴方向的实际晶格失配度为5.84%。

The effect of heating temperature on the synthesis was investigated and the synthesis process was studied by thermodynamic analysis as well.

考察了加热温度对SiC-Al2O3系复合耐火粉体合成的影响并对合成过程进行了热力学分析。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。