查询词典 sic

The addition of sodium hypophosphate must be appropriate , if added much , W and SiC contents in the coatings were decreased , So the addition of sodium hypophosphate must be controlled

次亚磷酸钠的添加量应适中，添加过多会降低镀层中 W 和 SiC 的含量，一般应控制在10~15g/L 之间。

To solve the problem, we then propose a windowing design such that the ICI effect can be reduced and a simplified SIC method can be applied.

为了解决这个问题，我们提出了一个windowing的设计，可以使得ICI的影响缩小，而且可以应用在较简化的SIC上。

SiC ceramic has been extensively applied in precision bearings, sealing element, steam-turbine rotor, burner nozzle, heat interchanger parts, atomic reactor materials and etc. because of its excellent properties in high temperature mechanical properties, antioxidatio, abrasion resistance, thermal stability, smaller coefficient of thermal expansion, larger thermal conductivity, hardness, thermal shock and chemical corrosion.

SiC陶瓷具有优良的高温力学性能，抗氧化性强、耐磨损性好、热稳定性佳、热膨胀系数小、热导率大、硬度高以及抗热震和耐化学腐蚀等优良性能，被广泛应用于精密轴承、密封件、气轮机转子、燃烧喷嘴、热交换器部件及原子热反应堆材料等，并日益受到人们的重视，应用前景十分广阔。

The opposite effect of SiC and C on the reaction between V and Si is discussed in terms of the interfacial interdiffusion model.

借助界面扩散的固态反应模型分析了SiC和C的添加的V/Si之间固态反应的影响。

The mechanism is studied by Monte Carlo method while 1.8MeV and 4.3MeV alpha particles irradiating the pn junction 6H-SiC diode.

为了研究6H-SiC材料制作的pn结二极管探测器的辐照特性，采用蒙卡程序模拟研究了4.3和1.8MeV能量的α粒子在辐照探测器中的物理过程。

It was found that the larger the content of SiC, the more roughenss and looseness the coating was.

SiC的含量越多，涂层表面越粗糙，表层结构越疏松。

No cracks and holes had been detected. Presence of elements Ni, P and Si were in the simple state of metallic bond Ni, P element and covalent bond SiC, respectively.

元素存在形态主要表现为Ni和P以单质的形式存在，Si以共价健SiC的形式存在，Ni-Ni之间以金属键进行结合。

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体－宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

In the chapter, the magnetism in Si1-xGex and SiC based MSs are also studied.

此外，论文还探讨了Si1-xGex合金和SiC的掺杂磁性。

After pre-oxidation process, the kinetics of isothermal oxidation of SiC obey a linear rule in the whole experimental temperature range.

经过高温预氧化处理之后，SiC试样在等温氧化过程中，氧化动力学曲线为直线，较未预处理试样氧化增重显著减少；连续升温氧化过程中，和未预处理试样相比，剧烈氧化开始温度升高，同时其氧化速率及最终的氧化增重均大幅度降低。

Neither the killing of Mr Zarqawi nor any breakthrough on the political front will stop the insurgency and the fratricidal murders in their tracks.

在对危险的南部地区访问时，他斥责什叶派民兵领导人对中央集权的挑衅行为。

In fact,I've got him on the satellite mobile right now.

实际上 我们已接通卫星可视电话了