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XRD results showed that the fabricated Si-SiC composites were composed of α-SiC,β- SiC and Si. The polytype of SiC was related to the reaction-heat during the sintering.

XRD结果表明Si-SiC复相陶瓷的主晶相为α-SiC,β-SiC和游离Si,不同晶型SiC的出现与试样烧结过程中Si/C反应的放热过程有关。

XRD results sho wed that the fabricated Si-SiC composites were composed of α-SiC,β- SiC an d Si. The polytype of SiC was related to the reaction-heat during the sintering .

XRD结果表明Si-SiC复相陶瓷的主晶相为α-SiC,β-SiC和游离Si,不同晶型SiC的出现与试样烧结过程中Si/C反应的放热过程有关。

The experimental results show that the content of SiC in RBSC increases with carbon content while α-SiC is chosen as a filler. However, the residual carbon would appear in specimens when the carbon content exceeds 30% by weight. Using carbon felt, the reaction-formed SiC particles are small and uniform in size and distribution. However, when carbon felt is impregnated with phenol resin, the reaction-formed SiC is nonuniform in size and distribution. X-ray diffraction shows that the fabricated RBSC is composed of α-SiC,β-SiC, and free Si. The polytype of SiC is related to the reaction-heat during sintering.

结果表明:选用α-SiC+C粉的混合物作为生坯,SiC相的体积分数随生坯中wC的增加而增加,但过大的wC将使硅化后的试样出现残碳;选用碳毡作为生坯,反应烧结碳化硅的显微组织特点是C/Si反应生成的碳化硅颗粒均匀细小,并呈线状分布在游离硅中;浸渍过树脂的碳毡硅化处理后的显微组织特点是反应生成的碳化硅颗粒粗大且呈不均匀分布。X射线衍射结果也表明,反应烧结碳化硅陶瓷由游离Si、α-SiC、β-SiC组成,试样中不同晶型碳化硅的出现与C/Si反应的放热过程有关。

X-ray radiography, X-ray radioscopy and X-ray computed tomography were performed to the C preforms and C/SiC composites made by chemical vapor infiltration method. Elementary research of the simulation of X-ray nondestructive testing of C preforms and C/SiC composites was conducted. The main contents and conclusions are summarized as follows:(1) The equivalent absorption coefficients of graphite and SiC to Al (KAl/sic, KAI/C) were measured. It was found that in 35-45KV, KAl/sic=1.1~1.2 and KAl/c=0.08~0.12. That means X-ray radiography was much less sensitive to fiber defects than to SiC matrix. It was suggested that Al Image Quality Indicator would be used to evaluate the quality of X-ray radiographs of C/SiC.

本文选择X射线照相、X射线实时成像和X射线CT等三种方法对C纤维预制体及C/SiC复合材料进行了检测和研究,并对C/SiC复合材料X射线检测的计算机模拟做了初步的探索,主要研究内容和结果如下:(1)测定了C和SiC的X射线照相等效系数,在35~45KV的条件下,Al对SiC的等效系数K_为1.1~1.2,Al对C的等效系数K_为0.08~0.12,所以X照相射线检测C/SiC对C纤维缺陷不敏感,而对SiC基体缺陷敏感。

The effects of ultrasonication and HF washing on SiC nano-particles were analyzed by Zeta potential, particle size distribution and SEM. The stability of suspension of SiC in ethanol, ethanediol and mixture of the two medias with PEG as dispersant at different pH were compared. The optimum ultrasonication time for SiC nano-particles was obtained. The influence of HF washing on SiC nano-particles was discussed; and high stability of SiC nano-particles suspension was achieved at pH=10 in ethanediol with 1wt% PEG as dispersant.

本文中采用Zeta电位、粒度分析、SEM等测试技术分析了超声震荡和HF酸洗对SiC纳米粉体的影响:对比研究了乙醇、乙二醇以及75%乙醇和25%乙二醇混合液作为分散介质,聚乙二醇为分散剂时纳米SiC粉体在不同pH下的分散稳定性,确定了粉体最佳超声震荡的最佳时间;探讨了酸洗的作用;并在乙二醇中,以1% PEG为分散剂,pH=10条件下获得了纳米碳化硅粉体的高稳定分散悬浮液。

ZnO, MgO and SiO_2 powders were covered on top of the alloy as dopants, the effects and principles of the dopants were discussed. Based these, SiC particles were made into preforms with different distribution of air holes by changing the granularity of SiC particles and the content of graphite additive, and the oxidation growth of aluminum alloy melt into the air holes within the preform was controlled to prepare SiC/Al_2O_3/Al composite with inerratic shape. And the SiC particles effect principle to the oxidation of SiC/Al2O3/Al composite was studied.

以ZnO,MgO和SiO_2为引发剂,覆盖在合金表面,讨论了引发剂的添加效果和作用机理;在此基础上将α-SiC颗粒制作成为预制体,通过改变SiC的粒度和石墨造孔剂的含量,调整预制体内部的气孔分布,控制铝合金熔体在预制体孔隙内的氧化生长,制备出形状规则的SiC/Al2O3/Al复合材料,同时研究了SiC颗粒的存在对SiC/Al_2O_3/Al复合材料生长机理的影响。

The results indicated it was very effective to increase the content of SiC whisker by ammoniating silicasol to decrease the particle size of raw powder and increase the space for SiC whisker growth, and by controlling the reaction temperature to mate the formation of SiC be compatible with the growth of SiC whisker.

工作中系统地研究了反应物料和合成工艺对SiC晶须产率和微观形貌的影响,发现氨解能促进硅溶胶的凝胶化,并细化反应物料,因而有利于SiC晶须的生成;升温速度的控制可使SiC的生成速率与SiC晶须的生长速率得到很好的适应,此为提高SiC晶须产率的有效途径。

The results show that a certain degree of increase of SiC content was helpful for nitrification of TiSi2, and SiC particles were nitrified during the SHS process in the samples of green compacts with 40% SiC and 50% SiC diluent.

结果表明:SiC在一定范围内增加有利于TiSi2的氮化,且含40%SiC和50%SIC的压坯在燃烧合成过程中发生了SiC的氮化反应。

SiC polytypes of 6H and 15R and a transition zone between the two were observed under HREM and TEM and discussed from the point view of the crystal structures; the clear evidence of Al〓C〓 nucleated in the SiC particle was provided, indicating the aluminum penetrating the SiC grains is already carbon-saturated and, consequently, Al〓C〓 crystals grow in the particles wherever a temporary local supersaturating is produced; The experimental observation indicated that the types of the interface between SiC and Al are variable and the distribution feature of reaction product, Al〓C〓, were also given in the present work: to be nucleated on SiC, to be aggregated at SiC/Al interface zone or to be aggregated at the crystal boundaries.

通过高分辨透射电镜,本文观察到SiC增强体中6H和15R同质多晶现象及6H-15R SiC转变区,以及另外一种无序的SiC同质多晶,并从其晶体结构的角度解释了6H和15R在晶体内共存的现象。通过高分辨透射电镜,本文给出了Al〓C〓在SiC颗粒内部形核的明证,表明Al〓C〓形核是Al渗透到SiC颗粒内部在C过饱和处在SiC的(0006)面上而形核,而且一种可能的位相关系为A1〓C〓[11〓0]∥SiC[11〓0]。研究结果同时给出了SiC/Al复合材料的界面反应产物A1〓C〓的分布特征:在SiC上形核并生长,聚集于SiC/Al界面去附近,或者聚集于晶界上。

And a relative preparation is characterized in that according to mol ratio (0.8-0.975):(1.8-1.95):(0.010-0.15):(0.010-0.15) to prepare and mix Mg powder, B powder, C nanometer powder, and SiC nanometer powder uniformly to be filled into an iron tube or iron-copper composite tube to be sealed, rotationally forges, draws and rolls to obtain MgB2 superconductive material containing C and SiC nanometer powder, or tablets the raw powder mixed uniformly via a tablet press, to obtain MgB2 superconductive block containing C and SiC nanometer powder, arranges obtained band or block in a vacuum furnace, vacuums and fills argon gas, keeps temperature for 0.2-3h at 600-1200DEG C, and obtains MgB2 superconductive material containing C nanometer powder and SiC nanometer powder.

制备这种MgB 2 超导材料的方法,其特征在于,将Mg粉,B粉,C纳米粉,SiC纳米粉按照摩尔比(0.8-0.975)∶(1.8-1.95)∶(0.010-0.15)∶(0.010-0.15)配制并混合均匀,装入铁管或铁铜复合管中密封后,按顺序先后进行旋锻、拉拔、轧制,得到含C和SiC纳米粉的MgB 2 超导线材;或者将混合均匀的原料粉用压片机进行压片,得到含C和SiC纳米粉的MgB 2 超导块材;将得到的线带材或块材放置真空炉中,抽真空后充入氩气,在600℃-1200℃保温0.2-3小时,最终得到含有C纳米粉和SiC纳米粉的MgB 2 超导材料。

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