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A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.

采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。

The isothermal kinetics of nanogram obtained by MA has been studied in section three. The grain growth of α solid solution of Fe〓CuNb〓Si〓B〓 powders is controlled by a single kinetics within the experimental temperature range, the activation energy for grain growth is 80.3kJ/mol, magnetic properties of powders at different annealing and milling conditions are measured, a preliminary effort has been given to the consolidation of Fe〓CuNb〓Si〓B〓 powders.

第三部分研究了机械纳米晶化粉末的等温晶粒长大动力学，在实验研究的温度范围内，Fe〓CuNb〓Si〓B〓纳米晶α固溶体的晶粒长大由单一的动力学过程所控制，其晶粒长大激活能为80.3kJ/mol，研究了不同球磨条件及热处理条件下纳米晶粉末的磁性，对纳米晶粉末的成型进行了初步的尝试。

In this thesis, there are two types of varactors used in the VCO: one is the Philips' BB135 p-n junction capacitor; the other is Al/HfO2/Si capacitor with HfO2 dielectric. Because the dielectric constant of HfO2 is larger than that of SiO2, the capacitance of Al/HfO2/Si capacitor will be larger than that of MOS capacitor with the same thickness and area. Therefore, there will be larger unit voltage for adjusting the ratio of the capacitance values of the capacitors.

在本论文实验的VCO电路中之可变电容有2种：一种是飞利浦厂商所提供型号为BB135之P-N接面电容；第二种是自制的Al/HfO2/Si电容是使用二氧化铪（HfO2）来做为电容的介电材料，因为HfO2介电常数比氧化矽（SiO2）大，目的是要在相同厚度以及面积下，就可以有较大的电容值，希望能藉此有较大的单位电压改变电容值的比值。

Compared with the original powder, the content of Si in the three troches increased by 8.09, 14.68, 12.64 times respectively. Accordingly, they were added with a little amount of silica gel. The content of trace element such as Ca, Fe, Zn in sample 4 have optimized clearly.

结果表明：3种片剂中均添加了部分晶体乳糖；根据3种片剂中Si含量比原粉的Si平均值分别增加了8.09、14.68、12.64倍的差异，可知片剂中均添加了微量的硅胶；样品4中微量元素Ca、Fe、Zn的含量明显优化。

The three isolates have four specific replacements in 87, 88, 95, and 119 in SI hypervariable region, and a unique cleavage site R-X-R-T-G-R in 3 terminal region. These data may be valuable for investigation of molecular basis of the serotyping, tissue tropism and pathogenicity of these virus isolates.

由于SI蛋白序列99－12川立氨基酸之间的序列可能对病毒的致病性起重要作用，SI蛋白5，高变区（56－69；117－131）与中和表位和血清型密切相关，这些区域在IBV血清型和基因型间起联系作用。

Our study rules out the effect of strain and composition alloying as the main factor of peak splitting. We attributed it to the existence of large amount of non-stoichiometry part in GaN/Si grown by MBE. A direct proof has been observed by HRTEM, which shows that the propagation of dislocations in the underlying layers could be blocked by using periodic AlN/GaN structure.

用三轴晶高分辨X射线衍射研究了Si(111)上生长的GaN中的应变组分问题，我们发现GaN的对称（0002）及非对称（10-12）峰在三轴晶配置下的ω-2θ扫描曲线都会发生劈裂，我们排除了应力和合金化的因素，认为在MBE方法生长的Si（111）上GaN外延层中存在一个占较大比例的稍微偏离化学配比的部分。

The new results include: 1. The two main difficulties were detailedly revealed in the growth of Ⅲ-nitrides on Si substrate.

通过系统研究Si衬底上不同GaN缓冲层的生长过程及其微结构，指出了影响Si上&两步法&生长GaN薄膜晶体质量的微观机制。

Fracture behavior study showed that, reinforced of SiC or Si〓N〓 nanoparticles, or SiC whiskers is due to cracks deflection, or twist, or diverse, or stop during propagating, and bridging and pulling-out of whiskers, and accompanied by fracture of a few SiC nanoparticles and whiskers.

断裂机理研究表明：裂纹扩展过程中遇到纳米SiC晶粒、纳米Si〓N〓晶粒和SiC晶须时，将发生偏转、扭曲、分叉、终止及晶须的桥接、拔出，并有少量SiC晶粒、Si〓N〓晶粒和SiC晶须断裂。

By this technique, quasi twodimensional growth of AlN was achieved under optimized condition, and more, high quality GaN layers were grown on Si (111) substrates using optimized AlN as buffer layer, and the full width at half maximum of near band edge emission at room temperature is the best reported result.

实验结果表明，经优化预沉积Al，成功获得了AlN在Si（111）衬底上的准二维生长，从而生长出高质量的以AlN作为缓冲层的Si基的GaN薄膜材料，其室温光致发光带边发射峰半高宽10nm，为所见报道室温测量结果最小值。

The effect of the thickness of a-Si interlayer on the solid state reaction and formation kinetics are systematically investigated.

研究了不同厚度的非晶硅对Co／a-Si／Ti／Si固相反应及形成动力学的影响。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。