查询词典 si

The design of this dissertation begins with the definition of audience data structure based on considering the embedded developing environment features. The dissertation uses the STi5518 chip by ST Microtones to collect audience data, and then the SI analysis and OSD interactive function are used to gain the user watching information. Then collect audience data in EEPROM of STB, use STB and serial to transmit the data, then use the RS232 serial port and RJ-45 converter to realize the data Return of Serial to Ethernet, in the process of data Return it completes the conversion of data format.

本设计首先在嵌入式环境的前提下，在用户数据采集和回传工作中采用了ST Microtones公司提供的STi5518芯片作为机顶盒主芯片，根据收视率调查需要制定出用户的收视信息数据结构，并结合数字电视业务信息分析以及机顶盒的屏幕显示互动功能，对用户的收视情况进行记录；然后把记录的数据存储到机顶盒的EEPROM中，并利用机顶盒串口输出数据，再利用RS232串口与RJ-45转换器实现串口转以太网的数据回传，在回传过程中完成了数据格式的转换。

Experiment results show that the mechanical-thermal noise coming from the structure and the mechanical performance of a heavily doped Si membrane is the main noise of the device, which can be reduced by minishing the membrane area and extending the membrane thickness to increase the mechanical resonant frequency of the membrane, but should be at the price of reducing the sensitivity of the device.

Hz(上标 1/2)/W。实验表明，器件的噪声中热机械噪声为主要噪声源，大小主要由浓硼硅薄膜的机械性能和器件结构决定，可以通过增大薄膜厚度，减小薄膜面积，从而增加薄膜的特征频率的方法来减小器件受外界振动的影响，但以降低器件的灵敏度为代价。

By using magnetron sputtering technique, the rare earth films including Ce-rich mischmetal, La-rich mischmetal, lanthanum and yttrium were prepared on glass, ITO glass and Si substrates under the vacuum environment. The crystal structure, surface morphology, electrochemical properties and optical performances during the hydriding/dehydriding process were investigated, the reaction mechanism and invalidation reason were analyzed as well.

本文采用直流磁控溅射方法分别在玻璃、ITO玻璃和Si片等基体上制备了富铈、富镧、La和Y等稀土系薄膜，对所制备的稀土薄膜在气态和电化学充放氢过程中的晶体结构、表面形貌、电化学性能和光学性能等进行了研究，并对其反应机理和失效原因进行了探讨。

The SI unit of P is 1 mol /.

P 的SI单位为mol /。

Li porta molto bene,anche se non si trucca.

显的非常年轻，即使她不化妆。

Using the same concept, we further provide the TaN-HfAlO-HfON-SiO2-Si MONOS device to operate at only 8 V under faster 100 us.

为了更进一步的降低记忆体元件操作电压使其达到嵌入式单一晶片系统的应用。

At very fast 100 us and low +/- 9 V P/E, good memory device integrity of 2.8 V initial memory window and large ten-year extrapolated retention of 1.8 V at 85oC or 1.5 V at 125oC are obtained in SiO2/Hf0.3N0.2O0.5/HfLaON/TaN MONOS device. Such excellent 85~125oC retention with small decay rate, at only 2.9 nm thin tunnel SiO2, is possible by tuning Hf0.3N0.2O0.5 trap energy deep into Si forbidden bandgap close to midgap.

在快速(100毫秒)和低电压(9伏)的操作条件之下，可得到2.8伏的记忆视窗；在85oC 和125oC环境下由外插法所得的十年资料储存能力，其记忆视窗仍有1.8伏和1.5伏，由於我们调整高含氮量氮氧化铪的捕陷能阶深入至靠近矽中间能带的禁止能带中，才能在仅2.9奈米穿遂氧化层的MONOS元件中，拥有如此突出的资料储存能力。

objective to review the experience of diagnosis and treatment of the non-invasive nasal si-nus mycoses.

目的 总结非侵袭型真菌性鼻窦炎的诊治经验，提高治疗效果。

Objective To review the experience of diagnosis and treatment of the non-invasive nasal si-nus mycoses.

目的 总结非侵袭型真菌性鼻窦炎的诊治经验，提高治疗效果。方法回顾性分析1995年1月至2005年12月收治的36例非侵袭型真菌性鼻窦炎患者的术前病情评估、治疗和术后随访资料。

Your iniquities have turned away these things, and your si have withholden good things from you.

5：25 你们的罪孽使这些事转离你们。你们的罪恶使你们不能得福。

You can do some assertiveness training.

你可以进行一些自信训练。

We were well on the path to making a rear-wheel-drive global platform," says Mays."

我们正致力于建立一个后轮驱动的平台，"Mays这样说道。"