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A quantitative analysis using computer simulation based on the modified Bragg's law and the optical multilayer theory was used to reproduce the diffraction rocking curves which fitted very well with the experimental ones, and a method to measure the structural parameters of Ge〓Si〓/Si superlattices was set up.

用光学多层膜理论对谱线作计算模拟的结果和实验非常一致,并在此基础上建立了一套同小角衍射测量Ge〓Si〓/Si超晶格结构参数的方法。

To improve the electrochemical properties of Si/C composite for lithium ion battery anodes, core-shell structured carbon-coated Si/C composite was prepared by spray drying technique.

为提高锂离子电池高容量Si/C复合负极材料的电化学性能,采用喷雾干燥法制备了核壳结构的碳包覆Si/C复合材料。

The influences of the two methods of MM and SI on the microstructure and the electrical properties were investigated by scanning electron microscopy and conductivity measurement. The results show that EG is easier to exfoliate into nanosheets using SI method than MM method, thus the latter have more outstanding conductibility.

运用电导率测试、SEM研究了MI和SI两种制备方法对复合材料的导电性能和形态结构的影响,发现插层作用和超声作用使得SI法较MI法更容易使EG剥离为纳米级厚度的石墨片,所以具有更佳的导电性能。

The sulphur atom in the intermediate has sp2 hybridization, and the remaining p orbital is symmetrical to the d orbital of the metal center. Thus, the lone pair on the p orbital can have interaction with the d orbital to form a π bond, which leads to the coplanarity of the center of Cp ring, Ru, P, S and Si atoms, rather than the deviation of P, S and Si atoms from the plane.

该中间体中,硫原子采取sp2杂化,硫原子剩余的一个p轨道与金属中心上的d轨道具有相同的对称性,因而该p轨道上的孤电子对可与金属中心上的d轨道形成π键,导致Cp环中心, Ru, S1, P和Si原子在同一平面内,而不是S1, P和Si原子偏离该平面。

Results In the course of interaction between organism protein and crocidolite, the protein symmetry decreased and structure loosened. The silicon of crocidolite was bonded with the alkyl, amido- of protein. New absorption bands of Si-O-C, Si-R clearly appeared.

结果 机体蛋白质在与青石棉的相互作用过程中,组织结构对称性降低;青石棉的矽已与蛋白质中的烷基、胺基交联成键,存在明显的Si-O-C、Si-R新的吸收谱带。

Between the {111} planes in single crystal Si there are two interplanar spacings, d(111) and d(111), but there is only one interplanar spacing d(110) between Si {110} planes, so that their blocking dips would be different.

单晶Si的{111}晶面有两个面间距d_(111)~和d_(111)~,而{110}晶面只有一个面间距d(110)。由此导致两者的堵塞坑是不同的,我们已从α粒子和质子的Si单晶堵塞效应的实验得到了证实。

We also studied a role of Si DBs in defect PL in Er doped a-Si:H.

本文还研究了Si DBs在Er掺杂a-Si:H的缺陷PL中的作用。

The EL excitation process was attributed to hot electron impact ionization of Si QDs by the dependence of the EL spectra on the change of the energy distribution of hot electrons.(3) Efficient green-blue ACTFEL was first obtained from Si QDs in Si layers of Si/SiO〓 superlattices.

利用磁控反应溅射方法制备出含硅量子点的富Si-SiO〓薄膜,通过热退火并结合喇曼光谱和光致发光谱判定了其中硅量子点的存在和平均尺寸,将发光机理归结为硅量子点中的量子尺寸效应。

The crystalline defects of metallic substrate can promote the formation of multi-crystal thin films. In contrast, the films on the Si single crystal are basically amorphous; The hardness of films are mainly determined by N concentration. The highest hardnesses of Si〓N〓 and TiN films ware obtained at 1. 1 of N/Si and 0.96 of N/Ti respectively. The hardness of Si〓N〓 film decreased dramatically when the free silicon atoms present.

发现薄膜中N原子百分含量主要受氮离子束流和氮气分压的控制,随着氮离子束流和氮气分压的提高,N/Si和N/Ti原子比增加;膜的组织结构则主要受轰击离子束压和基体种类的影响,高的轰击束压可以抑制薄膜的择优取向,金属基体上的晶体缺陷使薄膜易于形成多晶,而单晶硅上的薄膜基本上为非晶态;薄膜的硬度受氮含量的影响最大。

For better knowledge of high-temperature use of some silicides, the 1100℃ isothermal section of Ti-Ni-Si and Ti-Co-Si ternary sys...

本文在国家自然科学基金的资助下,对Ti-Ni-Si和Ti-Co-Si1100℃水平截面图和Ni〓Si-Co〓Si垂直截面图进行了实验测定和研究。

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相关中文对照歌词
Si No Te Hubiera Conocido
O Noapte Si O Zi
Si Me Recuerdas
Si Te Vuelves A Enamorar
Si Yo Fuera Tu Amor
Di Que Si, Di Que No
Si No Te Has Ido, Vete
Si No Eres Tu
Vamos En Un Viaje (Si Si)
Si Putri Dan Si Fulan
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I am accused of being overreligious," she said in her quiet, frank manner,"but that does not prevent me thinking the children very cruel who obstinately commit such suicide.""

客人们在卡罗利娜·埃凯家里,举止就文雅一些,因为卡罗利娜的母亲治家很严厉。

Designed by French fashion house Herm è s, this elegant uniform was manufactured in our home, Hong Kong, and was the first without a hat.

由著名品牌 Herm è s 设计,这件高贵的制服是香港本土制造,是我们第一套不配帽子的制服。

Do not 'inflate' your achievements and/or qualifications or skills .

不要 '夸大' 你的业绩或成果,条件或者技能。