查询词典 si-steel

In this thesis, there are two types of varactors used in the VCO: one is the Philips' BB135 p-n junction capacitor; the other is Al/HfO2/Si capacitor with HfO2 dielectric. Because the dielectric constant of HfO2 is larger than that of SiO2, the capacitance of Al/HfO2/Si capacitor will be larger than that of MOS capacitor with the same thickness and area. Therefore, there will be larger unit voltage for adjusting the ratio of the capacitance values of the capacitors.

在本论文实验的VCO电路中之可变电容有2种：一种是飞利浦厂商所提供型号为BB135之P-N接面电容；第二种是自制的Al/HfO2/Si电容是使用二氧化铪（HfO2）来做为电容的介电材料，因为HfO2介电常数比氧化矽（SiO2）大，目的是要在相同厚度以及面积下，就可以有较大的电容值，希望能藉此有较大的单位电压改变电容值的比值。

Compared with the original powder, the content of Si in the three troches increased by 8.09, 14.68, 12.64 times respectively. Accordingly, they were added with a little amount of silica gel. The content of trace element such as Ca, Fe, Zn in sample 4 have optimized clearly.

结果表明：3种片剂中均添加了部分晶体乳糖；根据3种片剂中Si含量比原粉的Si平均值分别增加了8.09、14.68、12.64倍的差异，可知片剂中均添加了微量的硅胶；样品4中微量元素Ca、Fe、Zn的含量明显优化。

The three isolates have four specific replacements in 87, 88, 95, and 119 in SI hypervariable region, and a unique cleavage site R-X-R-T-G-R in 3 terminal region. These data may be valuable for investigation of molecular basis of the serotyping, tissue tropism and pathogenicity of these virus isolates.

由于SI蛋白序列99－12川立氨基酸之间的序列可能对病毒的致病性起重要作用，SI蛋白5，高变区（56－69；117－131）与中和表位和血清型密切相关，这些区域在IBV血清型和基因型间起联系作用。

Our study rules out the effect of strain and composition alloying as the main factor of peak splitting. We attributed it to the existence of large amount of non-stoichiometry part in GaN/Si grown by MBE. A direct proof has been observed by HRTEM, which shows that the propagation of dislocations in the underlying layers could be blocked by using periodic AlN/GaN structure.

用三轴晶高分辨X射线衍射研究了Si(111)上生长的GaN中的应变组分问题，我们发现GaN的对称（0002）及非对称（10-12）峰在三轴晶配置下的ω-2θ扫描曲线都会发生劈裂，我们排除了应力和合金化的因素，认为在MBE方法生长的Si（111）上GaN外延层中存在一个占较大比例的稍微偏离化学配比的部分。

The new results include: 1. The two main difficulties were detailedly revealed in the growth of Ⅲ-nitrides on Si substrate.

通过系统研究Si衬底上不同GaN缓冲层的生长过程及其微结构，指出了影响Si上&两步法&生长GaN薄膜晶体质量的微观机制。

Fracture behavior study showed that, reinforced of SiC or Si〓N〓 nanoparticles, or SiC whiskers is due to cracks deflection, or twist, or diverse, or stop during propagating, and bridging and pulling-out of whiskers, and accompanied by fracture of a few SiC nanoparticles and whiskers.

断裂机理研究表明：裂纹扩展过程中遇到纳米SiC晶粒、纳米Si〓N〓晶粒和SiC晶须时，将发生偏转、扭曲、分叉、终止及晶须的桥接、拔出，并有少量SiC晶粒、Si〓N〓晶粒和SiC晶须断裂。

By this technique, quasi twodimensional growth of AlN was achieved under optimized condition, and more, high quality GaN layers were grown on Si (111) substrates using optimized AlN as buffer layer, and the full width at half maximum of near band edge emission at room temperature is the best reported result.

实验结果表明，经优化预沉积Al，成功获得了AlN在Si（111）衬底上的准二维生长，从而生长出高质量的以AlN作为缓冲层的Si基的GaN薄膜材料，其室温光致发光带边发射峰半高宽10nm，为所见报道室温测量结果最小值。

The effect of the thickness of a-Si interlayer on the solid state reaction and formation kinetics are systematically investigated.

研究了不同厚度的非晶硅对Co／a-Si／Ti／Si固相反应及形成动力学的影响。

During the Si homoepitaxial growth on a double domain Si (100)(2×1) surface, a monoatomic layer mode of RHEED intensity oscillation along [100] azimuth and a ＂monoatomic-layer-like＂ mode along [110] azimuth are observed.

对于双畴(2×1)再构表面的Si(100)外延，沿〔100〕方位观测到的RHEED强度振荡为单原子层式；而沿(110)方位观测时为&类单原子层&模式振荡。

Theresult showed that the stability and accuracy of α-Si-Mo heterophony acid absorption photometry methodwere improved higher than that of β-Si-Mo heterophony acid method can be used for daily rapid analysisof high content of silicon in the ceramic chalk.

硅的测定方法很多，对于高硅(Si≥0.4%)样品的测定，一般采用重量法[1]或氟硅酸钾容量法，由于二者都需要把分解好的样品形成正硅酸沉淀进行过滤，然后分别进行测定。

They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.

他们没有侵略性，但我大喊，并在他们的方向扔石头让他们过的线索，远离我，以防万一。

In slot 2 in your bag put wrapping paper, quantity does not matter in this case.

在你的书包里槽2把包装纸、数量无关紧要。