查询词典 si-steel

The latter has only one PL band peaking at about 1.48eV,while the former is a double-band PL spectrum with peaks at both 1.48eV and 1.97eV.The electroluminescenceform the Au／scored Si-rich SiO2 film／p-Si sample is about 6 times in intensity of that of the Au／unscored one.

未刻划样品的PL谱只有一个峰，位于840nm(1.48eV)，而刻划样品的PL谱是双峰结构，峰位分别位于630nm(1.97eV)和840nm.800℃退火的刻划富硅二氧化硅/p-Si样品在背面蒸铝制成欧姆接触和正面蒸上半透明金电极后在正向偏压10V下的电致发光强度约为同样制备的未经刻划样品在同样测试条件下的EL强度的6倍。

SI could abolish the effect of L-NMMA on vasomotion but L-NMMA did not influence the effect of SI on vasomotion.

在L—NMMA的有效作用时间内应用SI可使被抑制于收缩状态的血管重新扩张。

A high content of Si can result in the precipitation of Laves phase and the increment ofε phase.

Si含量高于 0 。45 at%，合金中析出颗粒状laves相，且随 Si含量增加，ε，L aves等第二相数量增多。

The fact that the interface state density at C〓/Si (111) interface is low indicates that C〓 has passivates the Si surface.

低界面态密度的C〓／Si界面的出现，表明C〓膜钝化了硅表面。

It was found that boron not only broke up the α-Ti dendrite, but also accelerated Si atoms to spread toward the interface of dendrite of supersaturating β-Ti solid solution and restrained the nucleation and growth of Ti〓Si〓 phases.

研究表明，适量的Al对Ti-Si共晶合金也有很好的强化和韧化作用（σ=1763MPa，ε〓=8.5％）。

The results showed that in CHINARE 6, the consumptions of NO 3 N、PO 4 P、SiO 3 Si were 1064.8、69.2、2196.9mmol/m 2,the uptake ratio of N and Si to P were 15 3, 31.7,respectively, and new production was 992.4 mgC/(m 2·d); and that in CHINARE 9, the depletions of NO 3 N、PO 4 P was 551.9、41.2mmol/m 2,respectively,the uptake ratio of N to P was 13.4,and the new production was 390.1 mgC/(m 2·d),indicating significant annual and /or seasonal variation.

结果表明在CHINARE－6期间，NO3－N、PO4－P、SiO3－Si消耗分别为1064.8、69.2、2196.9mmol／m2，NP、SiP吸收比分别为15.3、31.7，平均新生产力为992.4mgC／（m2d）。在CHINARE－9期间，NO3－N、PO4－P消耗分别为551.9、41.2mmol／m2，NP吸收比为13.4，平均新生产力390.1mgC／（m2d），表现出很大的季节和／或年际变化。

The analysis also indicates that a rearrangement of atoms has occurred in the Si (001) surface and, while a majority of surface atoms form bonds and dimerize, a minority still exist as non-bonding atoms.

本论文对Si（001）2×1表面再构、低能粒子轰击对再构表面的影响以及在Si（111）表面低能沉积类金刚石膜进行了分子动力学模拟研究。

The TiN/Si〓N〓 coatings were composed of TiN nanocrystallites with grain size of no more than 5 nm and amorphous Si〓N〓 phase.

本文首先使用离子束辅助沉积方法制备TiN薄膜和TiN／Si〓N〓纳米复合薄膜。

A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.

采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。

The isothermal kinetics of nanogram obtained by MA has been studied in section three. The grain growth of α solid solution of Fe〓CuNb〓Si〓B〓 powders is controlled by a single kinetics within the experimental temperature range, the activation energy for grain growth is 80.3kJ/mol, magnetic properties of powders at different annealing and milling conditions are measured, a preliminary effort has been given to the consolidation of Fe〓CuNb〓Si〓B〓 powders.

第三部分研究了机械纳米晶化粉末的等温晶粒长大动力学，在实验研究的温度范围内，Fe〓CuNb〓Si〓B〓纳米晶α固溶体的晶粒长大由单一的动力学过程所控制，其晶粒长大激活能为80.3kJ/mol，研究了不同球磨条件及热处理条件下纳米晶粉末的磁性，对纳米晶粉末的成型进行了初步的尝试。

They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.

他们没有侵略性，但我大喊，并在他们的方向扔石头让他们过的线索，远离我，以防万一。

In slot 2 in your bag put wrapping paper, quantity does not matter in this case.

在你的书包里槽2把包装纸、数量无关紧要。