查询词典 si-steel

The epitaxial growth of Er_2O_3 films on Si(001) and Si(111) have been investigated.

我们研究了Er_2O_3薄膜在Si(001)和Si(111)衬底上的生长。

E The fractal and spherical particles exist favorably in the coarse fraction, while in the fine mode (0μm) are floccules formed by flocking fine particles together, containing crustal elements and mainly being silicates and aluminosilicates. f The content of Al, Si, Fe in TSP samples is higher than in PM〓, indicating an enrichment of these elements in coarse mode. g Compared with non-dust particles, the dust particles are more homogeneous in terms of morphology, particle size and composition. h Particles with irregular shape and well-distributed size dominate in dust samples, containing crustal elements such as Mg, Al, Si, Ca, Fe et al.

细粒中除小圆球外，大多为细小颗粒聚结在一起的不规则块状颗粒，主要含地壳元素，可能是硅酸盐和铝硅酸盐。fMg、Al、Si、Fe在PM〓中的含量较相应的TSP中的低，可见这些元素主要存在于较粗颗粒中。g沙尘期气溶胶粒子的形貌较非沙尘期单一、均匀，非沙尘气溶胶粒子的形貌、组分较沙尘期复杂。h沙尘期样品中，粒径均匀、形状不规则的颗粒最多，这些颗粒主要含地壳元素Mg、Al、Si、Ca和Fe等，是典型的由源区传输过来的沙尘粒子，但其高硫含量表明在青岛特殊的地理环境下，在粒子表面发生了硫的均相和非均相反应。

The basis mechanism and main process flow of metal induced crystallization poly-Si (MIC poly-Si) dynamic gettering are discussed, and its applications are studied for use in poly-Si thin film transistor devices.

首先阐述了MIC薄膜多晶硅材料动态镍吸杂技术的基本机理和主要工艺过程，然后以多晶硅薄膜晶体管(poly-Si TFT)为例研究了动态吸杂技术的应用。

SEM analysis shows that after inoculater Si-Fe is added, the distribution of Si is heterogeneous which makes low temperature graphitization of the malleable cast iron easy.

扫描电镜分析表明，加Si-Fe孕育后，由于Si分布的不均匀使得可锻铸铁的低温石墨化过程易于实现。

B. Those theorems that relate the sj/vj=si/vi dual accounting system to the pre-Marxian primal accounting system of Sj/=Si/ much in the way that a bi-lingual dictionary relates, say, my children's private nursery language to standard English.

B。 与sj/vj=si/vi二重的帐目清算体系相关的那些定理。它们与前马克思主义的最初的帐目清算系统sj/=si的大部分联系是一种双语字典的方式，就像我孩子们的私人托儿所语言与标准英语一样。

Zr can partially replace Ti in the silicides because the free energy of formation of Zr-Si bonds is greater than that of Ti-Si bonds and both Zr and Ti elements are in group Ⅳa of periodic table.

由于Zr-Si粘合体的自由能大于Ti-Si粘合体的，Zr原子更多地溶于硅化物中，替代Ti原子形成新的硅化物〓。

First the conception of switched—current technology is introduced in this paper,and then an analysis of errors in SI—memory cell is given.The resolvents which aimed at the errors mentioned above are provided.At last,a new improved circuit is given.

首先介绍了SI技术，然后以SI电路基本单元为例，分析了SI电路存在的各种误差，并针对这些误差提出了解决方法；最后提出了一种新的改进电路。

The results indicate that the backbone of PBSZ is -Si-N-B- linkage in the form of borazine and C is in the form of Si-CH3. The ceramic yield of the PBSZ pyrolysed at 1000℃ in N2 and NH3/N2 atmospheres is 63wt% and 61wt%, respectively.

结果表明，先驱体的结构骨架为-Si-N-B-，其中B、N以硼氮六环的形式存在， C以Si-CH3形式存在。

The results show that the composite is dense and silicon particles are distributed uniformly. Transmission electron microscope observations show that stacking faults with high density, twins and dislocations are found in silicon particles. The Si-Al interfaces are well-bonded and no interface reactants are found. The dislocations and eutectic silicon precipitates are observed in LD11 matrix. Sip/LD11 composite has low density of 2.4 g/cm3, low coefficient of thermal expansion of 8.1×10-6/K, high thermal conductivity of 161.3 W/, and the annealing treatment can reduce the CTE and improve the thermal conductivity.

研究结果表明：复合材料组织致密，颗粒分布均匀；透射电镜观察发现，在Si颗粒内部存在高密度的层错，同时还存在孪晶和位错； Si-Al界面结合状况良好，无界面反应物； LD11铝合金中存在位错和析出的共晶Si；复合材料具有低密度(2.4 g/cm3)，低热膨胀系数(8.1×10-6/K)，高热导率161.3 W/(m·K的特性，可以通过退火处理进一步降低其热膨胀系数，提高热导率。

Two kinds of multi-layer structure of VO_x/PS/Si and VO_x/Si were fabricated, and the effects of porous silicon on the composition of vanadium oxide thin films were analysed.

对比了VO_x/PS/Si结构与VO_x/Si结构中氧化钒薄膜电阻对温度的热敏感性能，研究了多孔硅基底温度升高对氧化钒薄膜组分的影响。

They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.

他们没有侵略性，但我大喊，并在他们的方向扔石头让他们过的线索，远离我，以防万一。

In slot 2 in your bag put wrapping paper, quantity does not matter in this case.

在你的书包里槽2把包装纸、数量无关紧要。