查询词典 semiconductors

All of us know that the conductivity of semiconductors changes with temperature.

我们都知道，半导体的导电性随温度而变化。

Subjected to light, the conductivity of semiconductors is found to be high..

半导体受光的作用，我们发现其导电性很高。

In this thesis, we report the dielectric constants of different semiconductors.

在本文中，我们报告了不同的半导体的介电常数。

In the single crystal of C60 with a FCC structure,positron mainly appears outside the C60 molecule.The main annihilation space is the interspace between molecules.The calculated positron bulk lifetime in C60 is 352ps, which agrees with experiment value of 356ps in literature.In carbon nanotube bundles with different dimeters,as the diameter of carbon nanotubes increases,the main space where positron appears changes from the interspace of carbon tubes to the space inside carbon tubes,the radio between positron annihilation with valence eletrons and core eletrons becomes larger,the positron bulk lifetime in carbon nanotube increase rapidly first and come to be a constant at the end.The calculated positron lifetime of carbon nanotube with a dimeter of 0.8～1.6ns is 332～470ps,which agrees with the experiment value of 394ps.Positron annihilation has been studied in widly used compound semiconductors.

计算结果表明：在片层结构的石墨晶体中，正电子主要在石墨层间的空隙中湮没，计算出的石墨中的正电子寿命为208 pS，与文献中的实验结果215 ps符合很好；在金刚石单晶中，正电子主要在碳原子之间的空隙中存在并发生湮没，计算出的金刚石中的正电子寿命为115 ps，文献中的实验结果110 ps左右符合；在面心立方结构的C60晶体中，正电子主要在C60分子球壳内外侧及分子之间存在，C60球形分子中心正电子分布很少，正电子的湮没区域集中在C60分子之间的空隙区域，计算出的C60中的正电子寿命为352 ps与文献中的实验结果356ps相符合；对于不同管径碳米管束中的正电子分布，随着碳纳米管直径的增加，碳纳米管束中的正电子由主要在碳纳米管管间的区域出现转变为主要在碳纳米管管内中心的区域出现：碳纳米管束中的正电子与碳原子的价电子的湮没概率变得越来越大，与核心电子的湮没概率变得越来越小；碳纳米管束中正电子的湮没寿命先迅速增大，而后趋于一定值。

Today, Vishay is one of the world's largest manufacturers of discrete semiconductors and passive electronic components.

今天的威世已经成为世界上最大的分立半导体和无源电子元件的制造商之一。

Semiconductors doped by a combination of different.

按翻译半导体的不同组合而成的。

The GaAs, InP-based III-V compound semiconductors, which are known as their wide band-gaps, direct-band transition, high photoelectric conversion efficiency and high saturated electron drift velocity and mobility, become increasingly important and have been widely used in microelectronics and optoelectronics.

以GaAs，InP为主Ⅲ-V族化合物半导体材料具有很宽的带隙，大都为直接跃迁型能带，光电转换效率较高，以及具有很高的饱和电子漂移速度和迁移率。

It has been recently suggested that a simple model based on the concept of optical electronegativity and some other parameters should be good enough to study the main properties of ionic crystals and semiconductors with the use of only a few numerical constants.

它已 最近提出一个简单的模型的基础上，的概念，光电和其他一些参数应该不够好，研究的主要性能的离子晶体和半导体与使用只有极少数的数值常数。

In this paper, we report the progress on energy band structure studies of wide-band-gap semiconductors in NSRL.

以GaN、SiC和ZnO为代表的宽带隙半导体材料，是继Si和GaAs之后的第三代半导体。

SEM is widely used to determine local potential at the surface of semiconductors, for the electrical function testing and the failure analysis of LSI.

扫描电子显微镜广泛地利用于半导体表面局部电位的测定，电学功能试验和大规模集成电路失效分析。

According to the clear water experiment, aeration performance of the new equipment is good with high total oxygen transfer coefficient and oxygen utilization ratio.

曝气设备的动力效率在叶轮转速为120rpm～150rpm时取得最大值，此时氧利用率和充氧能力也具有较高值。

The environmental stability of that world - including its crushing pressures and icy darkness - means that some of its most famous inhabitants have survived for eons as evolutionary throwbacks, their bodies undergoing little change.

稳定的海底环境─包括能把人压扁的压力和冰冷的黑暗─意谓海底某些最知名的栖居生物已以演化返祖的样态活了万世，形体几无变化。