查询词典 semiconductor

Crosstalk ; Semiconductor Optical Amplifier; Optical Packet Switching; Cross Gain Modulation

串扰；半导体光放大器；光分组交换；交叉增益调制

A theoretical model of wavelength conversion based on cross gain modulation in semiconductor optical amplifier is derived. Characteristics of extinction ratio of converted signal under both co- and counter-propagating scheme are discussed in details.

建立了基于半导体光放大器-交叉增益调制的波长转换理论模型，利用分段方法对交叉增益调制波长转换器同向和相向两种工作方式下消光比特性作了详细的研究。

Novel All-Optical AND Gate Based on Cross Gain Modulation in Cascaded Semiconductor Optical Amplifiers. Chinese Journal of Lasers, 2004, 31(12): 1433～1436 in chinese

作者简介王颖(1979―)，女，华中科技大学光电子工程系硕士研究生，主要从事半导体光放大器在全光逻辑方面的研究。

When the input optical power is comparable with the saturated power of the semiconductor optical amplifier,SOA has a large nonlinearity,including self phase modulation and cross phase modulation.

对于半导体光放大器，当输入光功率和SOA的饱和功率可比拟时，SOA表现出较强的非线性效应，包括自相位调制和交叉相位调制。

Simultaneous inverted and non-inverted wavelength conversion based on cross polarization modulation in semiconductor optical amplifier.

基于半导体光放大器交叉偏振调制效应实现正、反相波长变换。

In order to acquire the largest extinction ratio of the converted signal in the cross gain modulation wavelength conversion, the signal wavelength λ pk,s should be longer than the small signal gain peak wavelength of the semiconductor optical amplifier.

增益调制型波长转换中，为得到转换后信号最大的消光比，信号光波长应该比半导体光放大器的小信号增益峰值波长长。

A drain diffusion layer connected to an output end of the internal circuit is formed in one of two diffusion regions of the surface of the semiconductor substrate that are defined by the gate electrode, and a source diffusion layer grounded is formed in the other region.

与内电路输出端相连的漏扩散层形成在由栅电极确定的半导体基片表面的两扩散区之一的区内，而接地的源扩散层形成在另一区内。

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

Magnetic sensors based on semiconductor are also widely used in many areas, such as the measurement of the magnetic field, the read head of magnetic hard disk, the detection of non-magnetic signal, the automotive, contact less control and many ammeters.

基于硅的半导体磁敏传感器广泛应用于测量磁场强度的各种磁场计、读出磁介质上信息的各类磁头以及非磁信号的探测器等。

According to the clear water experiment, aeration performance of the new equipment is good with high total oxygen transfer coefficient and oxygen utilization ratio.

曝气设备的动力效率在叶轮转速为120rpm～150rpm时取得最大值，此时氧利用率和充氧能力也具有较高值。

The environmental stability of that world - including its crushing pressures and icy darkness - means that some of its most famous inhabitants have survived for eons as evolutionary throwbacks, their bodies undergoing little change.

稳定的海底环境─包括能把人压扁的压力和冰冷的黑暗─意谓海底某些最知名的栖居生物已以演化返祖的样态活了万世，形体几无变化。