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semiconductor相关的网络例句

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与 semiconductor 相关的网络例句 [注:此内容来源于网络,仅供参考]

The measurements of the transport properties indicate that the crystal exhibits a semiconductor behavior with p-type carriers and the thermal activation energy was estimated to be about 0.18 eV.

我们测量了制备样品的电阻率和热电势特性,样品表现出典型的p型半导体行为。经对电阻率和热电势数据的拟合,得到样品的热激活能△=0.16-0.18eV。

Cuprous oxide(Cu_2O) is an important p-type semiconductor with a direct band gap of 2 eV,and has wide applications in solar energy conversion,gas sensors and catalysis due to its unique optical and electronic properties.

氧化亚铜是一种重要的p型半导体材料,禁带宽度为2 eV,具有独特的光学和电学性质,在太阳能转换、气敏器件和催化等领域具有较大的应用价值。

Cuprous oxide (Cu2O) is a direct band gap and is p-type semiconductor with a direct band gap of 2.0 eV, and has been attracted to apply in photoelectric devices and chemical catalysis.

中文摘要氧化亚铜是p-type 直接能隙半导体材,其能带间隙约为2eV,由於材料的优点,使得氧化亚铜在光电设备与化学催化剂的应用上引起相当大的注意。

It was found for the first time in b-FeSi2 based thermoelectric materials that a p-type semiconductor could change to an apparent n-type one, when the temperature was decreased below a critical temperature.

本项目研究首次在b-FeSi2基热电材料中发现"热伏极性"反转现象,即p-型半导体在某个临界温度以下表现为明显的n-型半导体热电特性。

Skutterudites are p-type semiconductor. The high carrier concentration is caused by the substitution of iron atoms to cobalt atoms in skutterudite.

La〓Fe〓CoSb〓热电材料均为P型半导体,具有较高的载流子浓度,大量的载流子是由于方钴矿中铁对钴取代的结果。

CuI is a P-type semiconductor material with 3.2eV bandwidth and stable performance in chemistry and physics. Its resistivity can be changed with concentration, and CuI film is transparent for visible band of light.

CuI是一种高带隙宽度的P型半导体材料,带宽为3.2ev,物理化学性质稳定,制备成本低廉,电阻率可随浓度改变,在可见光范围内透明等优点。

Ca3Co2O6 and Na-doped are p-type semiconductor, whereas Ni-doped Ca3Co2O6 turns into n-type.

Ca3Co2O6及掺Na都是n型半导体,而Ca3Co2O6掺Ni是p型半导体。

It was shown that TAPP and its metalloporphyrin complexes all had good photoconductivity. The surface photovoltage response in tensity of Soret band and Q band were enhanced with an external positive electric field and weakened with a negative electric field, and possessed the characteristic of p-type semiconductor.

并研究了这些卟啉化合物在不同外加电场条件下的表面光电压谱,结果表明,TAPP及其金属配合物都具有良好的光电性能,且其Soret带与Q带的光伏响应强度随外加正电场光伏响应强度的增加而增强,随外加负电场光伏响应强度的增加而减弱,具有P-型半导体的特征。

Aluminum nitride substrate has been recognized as one of ihe most promising electronic substrate as heating panel and packaging materials for its high thermal conductivity, fine electrical insulation, and close coefficient of thermal expansion to silicon semiconductor.

氮化铝材料具有较高的热导率和良好的介电性能,机械强度高,热膨胀系数与半导体硅材料相近,非常适于制造大功率或快速半导体器件的散热基片和封装材料。

Founded in 1966, Comdel, headquartered in Gloucester, Massachusetts, designs and manufactures RF and DC power supplies and process instruments for the semiconductor, flat panel, and industrial heating industries.

成立于1966年的Comdel电源公司位于美国马塞诸塞州的波士顿海滨,是一家专业致力于生产直流、低频、中频、高频、甚高频全频谱(DC- Khz-80MHz)精密电源的高科技公司。

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