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semiconductor相关的网络例句

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与 semiconductor 相关的网络例句 [注:此内容来源于网络,仅供参考]

The lead (PbI2 iodine) material is an n-type semiconductor materials, the probe into energy high resolution, linear response, pulse rise time is short, simple structure, high efficiency and low detection, convenient operation, in nuclear physics experiment and research aspects are widely used in nuclear science and technology, and many of the application of gas detector and instead of the counter.

碘化铅(PbI2)材料是一种n型半导体材料,制成的探测器能量分辨率高、线性响应好、脉冲上升时间短,结构简单、探测效率高、偏压低、操作方便的特点,在核物理实验和研究方面得到了广泛的应用,并在核科学技术的许多应用中代替了气体探测器和闪烁计数器。

Magnesium silicide (Mg2Si) is one kind of narrow-band-gap n-type semiconductor, and is a promising environmentally friendly thermoelectric material because of its high electrical conductivity and low thermal conductivity, and also because it is non-toxic and non-polluting.

硅化镁(Mg2Si)是一种窄带隙n-型半导体,具有高的电导率和低的热导率且无毒无污染、耐腐蚀,是很有潜力的环境友好型中温域热电材料。

Zinc Oxide is an II-VI n-type compound semiconductor with direct wide-band gap, and a hexagonal wurtzite structure.

氧化锌作为一种多功能的Ⅱ~Ⅵ族宽禁带化合物n型半导体材料,具有六方纤锌矿结构。

Zinc oxide is an n-type direct band-gap semiconductor material. Due to the large exciton binding energy of 60 meV, which ensures the large exciton emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet blue light emitting device.

氧化锌是直接带隙宽禁带半导体材料,具有较高的激子束缚能(~60meV),可以实现室温下的紫外受激辐射,在紫外发射器件等领域具有广阔的应用前景。

An N-type epitaxial layer (115), which is formed above an N-type semiconductor substrate (114) in each of a pixel region and a peripheral circuit region; a first P-type well (1) formed above the N-type epitaxial layer (115) in the pixel region; and light receiving regions (117), which are formed within the first P-type well (1) and each of which is a component of a photodiode, are included.

包括在每个像素区域和外围电路区域中的N型半导体衬底114之上形成的N型外延层115;在像素区域中的N型外延层115上形成的第一P型阱1;以及在第一P型阱1中形成的并都是光电二极管部件的光接收区域117。

Lead oxide is a traditional n-type semiconductor material, and it has many advantages, such as low growth temperature, simple preparation methods, high photoconductive and corrosion resistance properties.

氧化铅是一种传统的n型氧化物半导体材料,具有很多的优点,如生长温度低,制备方法简单,耐腐蚀性强,具有很好的光电特性和气敏特性等等,由于氧化铅的这些优点,氧化铅薄膜被广泛应用于透明导电薄膜、摄像、光电探测、气体敏感和耐腐蚀保护膜等领域。

Phosphine(PH3)is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping,ion implement and chemical vapor deposition etc.

磷化氢在电子工业中主要用作外延硅半导体的一种n型掺杂剂,在化学气相沉积和离子注入中被用作一种磷源,在发光二极管用磷砷化镓膜的生产中也占有重要地位。

The nanotube transistors exhibited n-type semiconductor characteristics, and the conductance of nanotube FETs can be modulated by more than 4 orders of magatitude at room temperature.

显示了纳米器件实际应用的可能性。7利用单根CNx/C纳米管作为半导体材料制备了n型的场效应晶体管,器件的电子密度在105~106 cm-1之间,亚阀值斜率为300-800mV/decode之间,开关比约为10000。

Due to the high concentration of Zni, as-grown ZnO is n-type semiconductor. Zni have strong compensation to the p-dopant, so the dopant should be screened in order to obtain effective p-doped ZnO.

我们的计算结果首次从理论上证明了ZnO的自然n型导电性与Zn子晶格的缺陷密切相关,而与氧子晶格的缺陷关系并不明显。

The Sn doped makes the electrical conductivity change from insulator to n-type semiconductor.

用共蒸发法制备掺锡的C60薄膜,发现掺入的Sn原子的薄膜导电性由原来的绝缘体变为N型半导体。

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