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semiconductor相关的网络例句

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与 semiconductor 相关的网络例句 [注:此内容来源于网络,仅供参考]

The joining material may be a solder paste, the substrate may be a semiconductor chip substrate, a computer chip. The process may be used to produce flip chips, ball grid array modules, column grid array modules, circuit boards, and attachment structures of the preceding components including information handling systems.

连接材料可以是焊剂糊料,基片可以是半导体芯片基片,计算机芯片,本方法可用于制造倒装式芯片、球粒格网阵列式模块、柱形件格网阵列式模块、电路板、以及包括信息管理系统的上述元件的附着结构。

"The Ultra Low Power process will be a deep sub-volt version of our Flexfet technology built at 130nm," said Doug Hackler, President and CEO of American Semiconductor.

美国半导体公司总裁Doug Hackler说:超低功耗处理将是Flexfet 130nm技术的深亚伏改进版本。

For the fixture of hailstone the direct freezing by a semiconductor refrigerator is used instead of the vacuum attraction.

2对雹块的固夹,用半导体致冷器直接冻住的方法代替了真空吸引。

List (1961), but there are two improvements in it: 1 A refrigerator (about -6℃) and a cooling flow (about -20℃) are adopted for cold environment, so the cutting operation can carry out at room temperatures; 2 For the fixture of hailstone the direct freezing by a semiconductor refri...

这台切片机的功能与List(1961)的相似,但有其特点:1采用了约为-6℃的冷箱和约为-20℃的冷风作为环境冷冻,因而使切片操作可在通常的温度下进行;2对雹块的固夹,用半导体致冷器直接冻住的方法代替了真空吸引。

This study utilizes the half tone mask technology, that could integrate the semiconductor electrode and source/drain electrodes to form one mask process, called four masks process.

本论文是利用半色调光罩技术,将半导体电极及源极/汲极电极整合为一道光罩,成为四道光罩制程。

Between the output from Hall effect in a semiconductor element and a rectifier unit.

在输出之前加上一个半导体霍尔元件和一个整流器。

By utilizing the cross gain modulation effect and the period 1 oscillation harmonic frequency locked in an optically injected semiconductor laser , we can extract the wavelength conversional individual channel optical clock from the optical time division multiplexing OTDM signal .

光注入半导体激光器会产生非线性单周期振荡特性,利用交叉增益调制效应及对单周期振荡的微波锁频效应,可从光时分复用信号中提取出波长转换的分路光时钟。

By utilizing the cross-gain modulation effect and the period-one oscillation harmonic frequency-locked in an optically injected semiconductor laser, we can extract the wavelength conversional individual channel optical clock from the optical-time-division-multiplexing signal. In a FP-LD, we numerically simulate the extraction of 20 GHz optical clock at 1550 nm from the 2×20 Gb/s OTDM signal at 1555 nm, and experimentally obtain the -105 dBc/Hz phase noise frequency division clock of 12.36 GHz to 6.18 GHz with simultaneous wavelength conversion from 1550.24 nm to 1545.91 nm.

采用一个FP半导体激光器作为全光分路时钟提取及波长转换器,数值模拟实现了从波长为1555 nm、速率为2×20 Gb/s的光时分复用信号中提取出波长转换为1550 nm、重复频率为20 GHz的分路光时钟,实验完成了从波长为1550.24 nm、重复频率为12.36 GHz光脉冲信号中提取出相位噪声为-105 dBc/Hz的波长为1545.91 nm、重复频率6.18 GHz的分频光时钟。

Heat radiation is the crux of all key technologies in high-power semiconductor lasers.

摘要在半导体大功率激光器的各种关键技术中,散热问题的解决是一个极其关键的技术。

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件,并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数,再利用网路分析仪量测其频率响应,分析其插入耗损、 sidelobe、品质因子Q,以比较不同基材所制作之层状表面声波元件之特性,此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

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