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semiconductor相关的网络例句

查询词典 semiconductor

与 semiconductor 相关的网络例句 [注:此内容来源于网络,仅供参考]

This work analyzes the potentiality of increasing the conversion efficiency for the solar cells materials based on GaN semiconductor materials doped by Cr.

分析了掺Cr的GaN半导体材料作为太阳能电池材料增加转换效率的可行性。

It is an extremely important semiconductor; doped with boron, phosphorus, or arsenic, it is used in various electronic circuit and switching devices, including computer chips, transistor s, and diodes.

硅是一种非常重要的半导体;掺入硼、磷或砷后,可用于各种电子电路和开关器件,包括计算机芯片、晶体管和二极管。

The second collector layer is made of a doped or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region.

第二集电极层是由掺杂或未掺杂的半导体制成的,具有比第一集电极层窄的带隙,与基极区域接触。

In this paper, the factors influencing the luminescence properties and luminescence quantum efficiency of doped ZnS nanoparticles are discussed, and recent developments with preparation and applications of doped ZnS semiconductor nanoparticle materials are reviewed.

本文讨论了影响掺杂ZnS纳米粒子发光性能和量子产率的因素,综述了掺杂ZnS纳米材料制备及其应用的研究进展。

In this thesis the preparation of doped composite semiconductor photocatalyst as well as its photocatalytic performance for hydrogen production was searched. The reseach works is composed of two parts: The first part was the study on the preparation of CdS-SiO_2 and its photocatalytic performance.

本文研究了复合掺杂半导体可见光催化剂的制备及其光催化制氢性能,主要分为两个部分:一、复合半导体催化剂CdS-SiO_2的制备及其光催化性能研究。

The invention discloses a p-type doped ZnO-based diluted magnetic semiconductor material and the preparation method.

本发明公开了一种p型掺杂ZnO基稀磁半导体材料及制备方法。

Our work can be divided into two parts: one is about the electronic structure and magnetism of FeS_4Sb_2; the other one is about the calculations of the electronic structure and magnetism of the transition metal Mn- doped diluted semiconductor GaAs supercell.

本论文的目的就是用基于密度泛函理论的第一性原理计算来研究几种磁性材料的电子结构。

The plasma frequency of doped semiconductor can be adjusted by changing the dope concentration.

其次,讨论了颜料粒子的单散射性质,计算了球形均匀粒子、包覆球形粒子、旋转椭球粒子以及其它非球形粒子的散射和吸收性质。

It consists of a highly doped p-n semiconductor junction, which short circuits with negative bias and has negative resistance over part of its range when forward biased.

它是由重掺杂p_n半导体结组成,p_n 结会由于负偏压而短路,并且当加正向偏压时,在其适用范围它具有负电阻。

Keywords: rare-earth doped material; wide-gap semiconductor; III-nitride; laser radiation; plasma

中文关键词:稀土掺杂材料;宽能隙半导体;III族氮化物;激光辐射;等离子体

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