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semiconductor相关的网络例句

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与 semiconductor 相关的网络例句 [注:此内容来源于网络,仅供参考]

Based on the traditional geometric optics principles and the method of ray tracking, this paper reports the calculation of the aberration of the mode index lens when the collimated beam incidents upon it inclinely with an angle, and the divergency of the output beam from the MIL when it works as a collimator for the end-butt coupling between the semiconductor laser and the waveguide.

本文从传统几何光学原理出发,用光线追迹的方法来计算研究准直光束斜入射到模折射率透镜上产生的像差,以及当半导体激光器与波导端射耦合以MIL作为准直透镜时,输出准直光束的发散情况,并探讨MIL在集成光学频谱分析仪中作为准直或会聚透镜的适用性。

The mirror in this case is part of an optical semiconductor called a digital micromirror device, or DMD.

在这里,镜子是被称做数字微镜器件的光半导体的一部分。

Our work demonstrates that carbon is a novel dopant in the class of doped ZnO dilute magnetic semiconductor materials.

我们的工作证明了碳是一种新的属于氧化锌掺杂务半导体材料。

The first collector layer is made of a doped or undoped semiconductor in such a way as to contact the sub-collector region.

第一集电极层是由掺杂或未掺杂的半导体制成的,与副集电极区域接触。

In this Thesis,Ⅱ-Ⅵ semiconductor nanoclusters and doped nanoclusters were synthesized and their special photoluminescence properties were investigated in details.

本文在对半导体纳米晶的物理性质进行较为全面了解的基础上通过掺杂稀土离子来提高纳米颗粒的发光效率,为纳米晶材料的实用化提供实验依据。

The present invention provides a doped semiconductor nano-crystalline and its preparing method.

本发明涉及一种掺杂半导体纳米晶及其制备方法。

It is three 汉语翻译英语转换器 types of doped semiconductor combination.

它是有三层不同二级翻译资格证的参杂半导体组合而成的。

Glass doped with semiconductor nano crystallites has been the focus of the photoelectron material science and technology for novel optical characteristics.

半导体纳米晶体掺杂的滤光玻璃由于具有良好的线性光学性质和显著的三阶非线性光学现象,近年来已成为光电子材料科学和技术所关注的焦点之一[1~ 3] 。

It is an extremely important semiconductor; doped with boron , phosphorus, or arsenic, it is used in various electronic circuit and switching devices, including computer chips, transistors, and diodes.

硅是一种非常重要的半导体;掺入硼、磷或砷后,可用于各种电子电路和开关器件,包括计算机芯片、晶体管和二极管。

Al and N with different concentrations are heavily doped in ZnO semiconductor,and the density of states of Al and N doped ZnO is calculated by DFT mothod under the condition of low temperature.

即在低温高掺杂氮和铝原子的条件下,ZnO半导体的电导率不仅与掺杂氮和铝原子浓度有关,而且和进入价带的相对空穴数有关。

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