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Whereas, in the unrecovered sample which was heated by laser for short time, although the＜001＞∥ND subgrains growth could be observed, but the growing preference was not so sharp as that in the recovered case.

通过透射电镜对铜的微观亚结构形貌观察与取向分析表明，在初始晶粒为15μm、经88％冷轧的样品中发现，冷轧基体中存在清晰的亚晶粒间界，并存在＜001＞∥ND取向区域；＜001＞∥ND亚晶周围聚集有＜011＞∥ND、＜112＞∥ND和＜123＞∥ND取向亚晶；＜001＞∥ND亚晶内具有较低的位错密度，而其它取向亚晶位错密度相对较高。

Small height fluctuations were artificially introduced to the thin film samples by mechanically rubbing the sample surface with a rayon cloth before dewetting initiates. By comparing the dewetting morphology evolution and the characteristic length of dewetting structures of unrubbed and rubbed samples, the results clearly show that the dewetting mechanism for thinner polystyrene films with h≤13. 3nm is spinodal dewetting and that for thicker films with h≥13. 3nm is heterogeneous nucleation dewetting.

通过用绒布在薄膜表面进行摩擦，人为的引入一定程度的厚度涨落，通过比较有和没有表面涨落的薄膜的去湿形貌，可以清楚的识别出厚度小于13.3nm的聚苯乙烯薄膜的破坏机理为旋节去湿，而厚度大于13.3nm的聚苯乙烯薄膜的破坏机理则为成核去湿，形成双连续结构或孔洞都可以导致薄膜的旋节去湿。

There seems to be some differences in the expression of those related factors between ruptured and unruptured aneurysms. But these differences are not absolute and have not been confirmed by large sample and quantity study.

破裂动脉瘤和未破裂动脉瘤比较，胶原代谢相关因素的表达存在一定的差异，但这种差异并不是绝对的，而且也缺乏大样本的定量研究的证实。

The EL spectrum of the unscored sample can be decompounded into two Gaussian luminescence bands with peaks at about 1.83eV and 2.23eV,while in that of the scored one,the intensity of the 1.83eV peak is enhanced significantly,and a new Gaussian band with peak at about 3.0eV appears.

EL谱形状也有明显不同，表现在：未经刻划样品的EL谱可以分解为两个高斯峰，峰位分别位于1.83eV和2.23eV；而在刻划样品EL谱中1.83eV发光峰大幅度增强，还产生了一个新的能量为3.0eV的发光峰。

The Si-rich SiO2／p-Si structure has been fabricated with two-target alternative magnetron sputtering technique.After the Si-rich SiO2／p-Si sample having been scored by diamond tip on the front surface and annealed at 800℃ in N2 the photoluminescence spectrum is found quite different from that from the unscored one,which having been annealed in the same condition.

以磁控溅射方法于p-Si上淀积富硅二氧化硅，形成富硅二氧化硅／p-Si结构，用金刚刀在其正面刻划出方形网格后在N2气氛中退火，其光致发光谱与未刻划的经同样条件退火的对比样品的PL谱有很大不同。

The latter has only one PL band peaking at about 1.48eV,while the former is a double-band PL spectrum with peaks at both 1.48eV and 1.97eV.The electroluminescenceform the Au／scored Si-rich SiO2 film／p-Si sample is about 6 times in intensity of that of the Au／unscored one.

未刻划样品的PL谱只有一个峰，位于840nm(1.48eV)，而刻划样品的PL谱是双峰结构，峰位分别位于630nm(1.97eV)和840nm.800℃退火的刻划富硅二氧化硅/p-Si样品在背面蒸铝制成欧姆接触和正面蒸上半透明金电极后在正向偏压10V下的电致发光强度约为同样制备的未经刻划样品在同样测试条件下的EL强度的6倍。

By the contrast of the decay characteristics between the unsensitized sample and the sensitized samples, the optimum sensitizing-time on this experiment condition is 60 min.

通过未增感样品与增感样品的衰减曲线对比，得到了在此实验条件下的最佳增感时间为60min。

It is necess parities influence unsignificantly ary to identify the research result by improve sample number.

而基因型、品种和胎次对产活仔数影响均不显著。

The amount of web material added to, subtracted from and present in the tension zone in a sample time period is then converted to an unstrained amount of web material that when combined provides an estimate for the present amount of unstrained web material present in the tension zone.

然后，将采样时间周期内添加到张力区的、从张力区中减去的以及存在于张力区中的卷筒纸材料的量转换为卷筒纸材料的非应变量，当将他们相结合时，给出存在于张力区内的非应变卷筒纸材料的当前量的估算。

At last, the sample for determing saddle's position and the unstressed length of cable on the saddle was given.

最后给出了确定索鞍设计位置和索鞍顶部主缆无应力长度的算例。

He doesn't care if he will break the rule as long as he can win.

他不在乎是否会违规，只要他能赢。

Brown, round, biconvex, film-coated tablet impressed with "IRESSA 250" on one side and plain on the ther .

布朗轮， biconvex ，薄膜包衣片的印象"易瑞沙250 "一方和平原的存在。