查询词典 reverse current

We also designed the timing circuit board to driver the MOSET and the network control system based on the probably fill mode in the future and the RF system of the storage ring in HLS. The high reverse overshoot exists in the current pulse with the pulse width of 60 ns. Further study is necessary to eliminate the reverse overshoot and to search the proper techniques on modulability of light pulse interval in HLS.

根据未来光源储存环可能的填充模式，以及光源储存环高频系统的特性，设计了MOSET开关驱动控制系统的时钟试验电路，和以太网控制试验电路，即将投入加工。60ns脉宽的脉冲电流，存在较大的反向过冲，需要进一步研究合适的反峰削除技术，以及可用于光源脉冲可调性的合适技术。

When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse

当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。

When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.

当二极管反向偏置时，仅有很小的，可忽略的漏电流流过，除非是达到反向击穿电压。

The anode structure of CI-LIGBT is optimized by numerical simulation, and it is pointed out that segmented p〓 anode region surrounded by n〓 anode region is the key to improve the ability of current limiting, and the more deeper the n〓 anode junction relative to the p〓 anode junction, the more powerful the ability of current limiting is. The affection of the breakdown voltage BV〓 of the reverse biased p〓n〓 junction and the sample resistance upon the latching current, the latching voltage and the on-state voltage have been studied, and it is indicated that the tradeoff between the on-state voltage and the latching characteristics is the excellentest when BV〓 is 1. 1V so that its on-state voltage can be just only 0.6V higher than conventional LIGBT. It is also found that this device is especially suit to high temperature environment. Based on X. B. Chen's surface voltage sustaining structure using optimized variational lateral doping and Ludikhuize's multiple floating rings structure, high voltage LIGBT and is studied in this paper.

通过数值模拟，优化了CI-LIGBT的阳极区结构，指出采用被n〓阳极区包围的单元状p〓阳极区是提高该器件限流能力的关键，而n〓阳极区结深相对p〓阳极区结深越大，器件的限流能力越强；分析了反偏p〓n〓结击穿电压BV〓和取样电阻对器件闩锁电压、闩锁电流和导通压降的影响，得出BV〓在1.1V时器件导通压降和抗闩锁能力间的折衷关系最优，其导通压降仅比普通LIGBT高0.6V；分析了温度对LIGBT闩锁性能的影响，表明CI-LIGBT即使在450K的高温下也不会闩锁，尤其适用于高温工作环境。

This article is currently China's home appliance reverse logistics developments do preliminary research and propose appropriate for the current situation of reverse logistics model.

本文将对目前中国废旧家电逆向物流的发展情况做初步的研究并且提出适合当前形势的逆向物流模式。

We could reverse the current and reverse the monster -making process!

我们能将电流反转，而把鬼怪制造过程倒转过来！

However, must clearly recognize that the current stock is still in the downward trend, the downward trend of the whole without any tendency to reverse, the most obvious short average surface now under pressure, on the 5th line to become difficult to break, along the "line of defense"; BOLL channel fully operational in the downlink channel, and there are no signs bottomed; and major trends TRIX and MACD indicators are in a strong explore the stage; OBV indicators downlink unable to fully demonstrate that the market inside and short-term to maintain the disadvantaged pattern indexes to reverse the trend away from the whole is still too early!

但是，必须清醒地认识到，目前的股价仍然处于下降趋势，但整体下降的趋势没有任何扭转的趋势，最明显地表现在短，平均压力下，五日线成为难以打破，沿防御&线&；波尔渠道充分的下行信道的业务，而且没有迹象见底；及基质的主要趋势和MACD的指标是一个强大的探索阶段，成交量净额指标下行无法充分表明，内部和短期市场，维持弱势格局指数扭转这一趋势远离整体还为时尚早！

At the same time, introduces systematically the history and current situation of displacement reverse analysis, describes the displacement reverse analysis theory of the elastic-plastic problem, and based on the actual project, this paper presents displacement reverse analysis in the application of the tunnel project.

同时，较为系统地介绍了位移反分析方法研究的历史与现状，叙述了弹塑性问题的位移反分析理论，并结合实际工程，研究了位移反分析在隧道工程中的应用。

Since Al〓Ga〓In〓P possesses larger valence band difference to GaAs and wider energy gap, minor carrier reverse injection from base and space charge region recombination in the emitter are effectively suppressed in Al〓Ga〓 In〓P/GaAs HBT. Under most circumstances, quasi-neutral base recombination current dominates the base current, and its ratio to collector current varies little with collector current and temperature, thus greatly stabilizes the current gain.

Al〓Ga〓〓In〓P/GaAs HBT由于异质结的△Ev较大，发射区禁带较宽，有力地抑制了基区少子反向注入流和发射区空间电荷区复合电流；在大多数情况下，基极电流以准中性基区复合电流为主，其与集电极电流的比值随集电极电流和温度的变化极小，稳定了电流增益。

It is found theoretically and simulation that a piece of solar cell have same photocurrent in different diode factor and reverse saturation current at same temperature and irradiation. This paper describes a new combined perturb and observe method for acquire the actual diode factor n and reverse saturation current Io.

经过理论分析与仿真研究，发现同一块太阳能电池在相同的温度和照度，不同的二极管反向饱和电流Io和品质因子n的情况下，输出的光生电流是相等的。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。