查询词典 reverse current

A semiconductor diode in which the reverse current varies with the intensity of received light.

反向电流随光的照射强度而发生变化的一种半导体二极管。

In this mode, the device will limit the output reverse current.

在这种模式下，器件会限制输出反向电流。

All apparatus and reverse current relay and automatic control have been checked out.

所有的设备和反向电流继电器及其自动控制已检查完毕。

It is confirmed that the oxide film of Al is important factor to reduce reverse current by XPS.

通过 XPS 分析发现，表面处理之后生成 Al 的氧化物薄膜是导致漏电流降低的原因。

The World Cancer Declaration has set out targets to stop and reverse current trends.

世界癌症宣言已经订立了目标来阻止和扭转目前的趋势。

The reasons why reverse current protection is not necessary in rectifiers of direct current traction substation are described.

通过分析，阐述了直流牵引变电所内的整流器不必设置逆流保护的理由。

The effect of reverse current is not just to clean away the oxidic film on the surface of aluminium plates, and what is more, to heat the workpiece.

反极性电流的作用不只是清理工件正面的氧化膜，其更重要的作用是加热工件。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

An embodiment of the invention discloses a reverse power control method of an orthogonal frequency-division multiple access system including: calculating decision threshold values of each adjacent subdistrict according to the current reverse traffic channel gain of an access terminal, channel differences between each adjacent subdistrict and the resources distributed by the access terminal; and adjusting the reverse traffic channel gain value of the access terminal according to the decision threshold values of each adjacent subdistrict and using the adjusted reverse traffic channel gain values to determine the transmit power of the reverse traffic channel.

本发明实施例公开了一种正交频分复用多址系统中的反向功率控制方法，包括：根据接入终端的当前反向业务信道增益、各个相邻小区的信道差异以及接入终端所分配的资源情况计算各个相邻小区的判决门限值；根据所述各个相邻小区的判决门限值调整接入终端的反向业务信道增益值，并且利用所调整的反向业务信道增益值决定反向业务信道发射功率。

The reasons why reverse current protection is not necessary in rectifiers of direct current traction substation are described.

摘要通过分析，阐述了直流牵引变电所内的整流器不必设置逆流保护的理由。你知道它的英文吗？

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。