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resistivity相关的网络例句

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与 resistivity 相关的网络例句 [注:此内容来源于网络,仅供参考]

Lead dioxide is characterized by low electrical resistivity, stable chemical property, anticorrosion, high electric conductivity, etc, and applied in a variety of electrolysis production of organic and inorganic substance, sewage disposal and the production of superpure water widely, and so is attached importanced to by interrelated scientists.

随着电化学工业的不断发展,传统的阳极材料越来越表现出其局限性,二氧化铅电极具有电阻率低、化学性质稳定、耐蚀性好、导电性好等特性,广泛应用于各类有机物和无机物的电解生产、污水处理及高纯水制备过程中,受到相关科学家的重视。

The theoretical foundation of electrical prospecting is that the resistivity of different rocks and minerals are different, and different fields have different responses to telluric current structure.

电法勘探是最重要的地球物理探测方法技术之一,在工程地质、环境地质、水文地质以及部分矿产的调查或勘探中有广泛的应用。

So we can inverse telluric current structure of medium according to the response, that is, the resistivity and distribution of underground rock and mineral.

电法勘探的理论基础是不同岩石矿物的电阻率不同,不同地电结构的场响应不同,因此我们可以由观测的场响应反演出介质的地电结构,即地下岩石矿物的电阻率及分布。

The paper also has discussed the problem on earthquake prediction by telluric current method based on the anomalous phenomena of earth resistivity of the 6.1 earthquake.

文中还就6.1级地震的地电异常现象讨论了地电方法预报地震的问题。

The telluric resistivity anomaly of moderate strong earthquake has a complicated feature, the length of the anomaly duration is only 60-90 days, the amplitude of the anomaly is 1-2%.

研究表明,中强地震地电阻率异常特征非常复杂,异常的时间一般只有60—90天,异常的幅度也只有1%—2%。

The resistivity, squared resistance and temperature coefficient of resistance in hydrogenated silicon film decrease with the increasing of boron doping concentration.

搭建了半导体噪声测试系统,对非晶、微晶和多形三种氢化硅薄膜的1/f噪声测试分析说明薄膜的晶化使得薄膜结构的有序度更高,晶化降低了薄膜的1/f噪声。

The resistivity of the polysilicon films could be controlled under different dopant concentration and different anneal temperature. The changes of resistance with the temperature were measured. The temperature coefficient of resistance value was about 1‰ when the boron concentration was 5X 10 /cm and the anneal temperature was 900℃.

2制作了不同掺硼浓度和退火温度的多晶硅电阻,测试了阻值随温度的变化,在掺硼浓度和退火温度分别为5×10~(14)/cm~2和900℃时得到了接近1‰的TCR值。

It is found that CO2 laser irradiation results in a drsmiatic decrease in the resistivity and remarkable increases in the insulator-metal transition temperature T(subscript P and the temperature coefficient of resistance TCR.

与传统的高温退火类似,经CO2激光辐照后,样品的电阻率从1.3mΩ?cm下降到0.5mΩ?cm,绝缘态-金属转变温度和温度电阻系数分别从255K和7.9%?

The smaller bismuth ruthenate partical is, sheet resistivity is lower and temperature coefficient of resistance is more positive and the refiring change ratio is nearer to zero.

铅硼硅玻璃粉体平均粒径对厚膜电阻的性能影响有一极值点,约为1.51μm,在该点处膜层的方阻值最小,电阻温度系数绝对值最小,重烧变化率最接近零值。

This paper is a study of the relationship between metal glass resistivity as well as its temperature coefficient and its ingredients.

总结了金属玻璃的电阻率及其温度系数与其组成成分的关系。

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