查询词典 probe-pointed

In traditional, the working probe naturally sustaining repeated bending actions and wear, absolutely needs a mechanism to prevent it from being damaged, caused by the change of the probe's geometry and the increase of the contact resistance. Therefore, in this study, we develop a CMOS-based chip in connection with the electroformed probes to detect each of their counterforce, contact resistance to evaluate if their contact force and coplanarity are controlled within safe range.

传统上，探针常因为弯曲作动和磨耗，使几何形状产生改变，进而电阻值提升，使过大的电流通过探针而烧毁，或因共面度不佳部分探针未能确实接触IC焊垫误判成断路，故晶片的制作重点在於监测探针卡上个别探针的回馈力量，当探针量测IC时，可进行即时探针反作用力、接触电阻的检测，进而了解探针卡工作时受力是否均匀、平坦度是否符合要求等性质。

First of all, this paper selected a wide range of spectral response, short response time, photoelectric conversion efficiency, pn junction area of silicon photovoltaic cells, as the light meters photoelectric conversion of the probe, and it creates a separate probe light and increase to the filter and cosine amended, and separated from the fuselage, better adapted to the cosine law and improve the measurement accuracy and scope.

首先，本文选用了光谱响应范围宽，响应时间短，光电转换效率高、pn结面积大的硅光电池作为光照度计的光电转换的探头，并把它做成一个单独的光探头，并加了以v滤光器和余弦修正器，与机身分离，更加适应余弦定律，提高了测量的精度和范围。

The apparatus use Lm336 as constant voltage source, and it been converted to constant - current source by amplification, which provide current for the Hall probe. The non-idiostatic offset circuit use the bridge method to offset the circuit. So while the magnetic density is null, the output voltage of Hall probe is null too.

仪器采用恒压源经过放大器转换为恒流源，为霍尔探头提供工作电流；不等位电势补偿电路采用桥式补偿网络，补偿电压通过调节可变电阻获得，实现霍尔电势的幅值补偿，使外磁场为零时，霍尔探头输出电势为零；磁通电路主要提供对样品的磁特性测量，它由测量线圈和积分器组成。

Front panel real-time switching PIN diode crystal probe and micro-probe measurements.

前置面板可以实时切换晶体探头和微型PIN二极管探头的测量。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In chapter 4, for the first time, we studied the control role of the relative phase between the probe and driving fields on inversionless gain of the probe field in a closed and Doppler broadeningΛ-type three-level system with the spontaneously generated coherence.

结果发现：(1)不管探测场和驱动场是同向传播还是反向传播，驱动场是失谐还是共振，无反转增益总是随相对位相的改变而作周期性变化，周期为2π。

Single probe ; Parallel Mach probe ; Mach number ; Plasma drift velocity ; Electron temperature ; Ion density

单探针；平行马赫探针；马赫数；等离子体漂移速度；电子温度；离子密度

Methods A retrospective analysis of 28 cases of rupture of inferior lacrimal ductule were applied the method of nonpigtail probe or pigtail probe to search the ruptured end and inosculate.

回顾分析28例（28眼）下泪小管断裂，分别采用非猪尾探针法和猪尾探针法寻找泪小管断端，并加以吻合。

It is Y type of reflective fiber- optic probe head adapted in the paper that integrates micro-displacement and surface roughness measurement device which is composed of Luminescence Diode Phase Locking Amplifier, Fiber-optic probe head Electric eye and so on.

本论文采用Y型反射式光纤探头构建了微位移及表面粗糙度检测装置，主要由发光二极管、锁相放大器、光纤探头、光电池及相关电路组成。

The detonation velocity measured by the continuous velocity probe method is in accord with the detonation velocity measured by the traditional electrometric method, and the continuous velocity probe method can even give the true course of detonation development for industrial explosive.

显然，平均爆速测试结果与连续爆速的测试结果吻合很好，且连续速度探针法能满足准确测量工业炸药在装药结构中爆速连续变化的要求。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。