查询词典 prickle cell layer

It has beenconfirmed that the occurrence of basal cell carcinoma, small cell lung cancer,pancreatic cancer, prickle cell carcinoma, prostatic carcinoma, carcinoma of bladder,medulloblastoma and gastric cancer of mankind have a close relationship with the abnormal activation of Sonic hedgehog signaling pathway.

现已证实人类皮肤基底细胞癌、小细胞肺癌、胰腺癌、口腔鳞状细胞癌、前列腺癌、膀胱癌、髓母细胞瘤、胃癌等肿瘤的发生与sonic hedgehog信号通路异常激活密切相关。

The simple pigment epithelial cell layer, the optic ventricle, the primitive neuroblastic layer and the peripheral fibrous layer were observed. The number of both the retinal layer and cellular layer increases in the 35 day old Giant panda.

发现胚后64小时龄大熊猫视网膜的分化程度很低，色素层已形成，但视泡腔明显；神经层由外面数层长梭形、内面数层圆形细胞核及无核的纤维层构成。35天龄大熊猫视网膜细胞层次增多。

The results indicate that the cell only doped with Al2O3 (Cell 1) is of the worst output performance at 850 ℃, the output power density being 0. 083 W/cm^2, and that the cell doped with Al2O3 and coated with buffer layer (Cell 2) is of the best output performance at the same temperature, the output power density being 0.120W/cm^2. AC impedance spectroscopy analyses indicate that the interface resistance and Ohmic resistance of Cell 2 are obviously less than those of Cell 1, meaning that insulative nickel aluminum spine1 is generated by the reaction of Al2O3 and NiO during the sintering at a high temperature.

结果表明：850℃时，含Al2O3的电池输出性能最差，输出功率约为0.083 W/平方公分；含Al2O3并具有过渡层的电池输出性能最好，输出功率约为0.120 W/平方公分；交流阻抗谱分析表明，含Al2O3并具有过渡层的电池的欧姆电阻与界面电阻均比不含过渡层的明显减小，说明YSZ中添加的Al2O3在高温烧结过程中，与阳极材料NiO发生反应生成不导电的镍铝尖晶石。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

According to the simulated results, it was found that the incident light was not fully absorbed in the solar cell due to a thinner base layer. The un-absorbed incident light could be further reflected by a AuGe/Au mirror layer and absorbed again by the base layer. Thus the disadvantage of the GaAs thin-film cell with a thinner base layer could be solved by the additional reflection from the AuGe/Au mirror with a high reflectivity within 800~1000 nm wavelength. Moreover, the external quantum efficiency in the long wavelength region and short current density were also increased.

从模拟结果中得知，薄膜型结构之太阳电池可以经由AuGe/Au之金属反射层，再次将未被基极层完全吸收之入射光反射回太阳电池，使得薄膜型结构在长波段的外部量子效率获得提升，这结果显示薄膜型结构太阳电池可利用AuGe/Au之金属反射层在长波段的高反射率，改善使用较薄基极层时，无法将入射光完全吸收的缺点。

At least 5 layers of retina were recognized in the posterior retina, including the simple pigment epithelium, neuroblastic cell layer, developing inner plexiform layer, developing ganglion cell layer and the developing nerve fiber layer.

后极视网膜至少可分为5层，即色素层、成神经层、发育中的内网层、节细胞层和神经纤维层。

The present studies showed that two cell populations were found in haemocytes: large cell with high granularity and small cell with low granularity by flow cytometry FCM on light scanttering pattern. Two distinct cell types were identified based on phase contrast microscope: one type of cell was dark and dioptric aberration, while the other was bright and dioptric strong. By Giemsa and H.E staining, cytoplasmic staining were heterogeneous and internal particles were obvious in one type of cell, while cytoplastic staining were homogeneous and internal particles were inexistent in the other type of cell. By transmission electron microscope, we found that the mitochondria, Golgi apparatus organelles were rich and internal particles were obvious in one type of cells, and contrary to the another cells.

流式细胞术光散射图谱显示血细胞被分两类，一类为颗粒度高的大细胞，另外一类为颗粒度低的小细胞；相差显微镜观察显示，血细胞可分为胞体暗、折光性差和胞体明亮、折光性强的两类； Giemsa和H.E染色显示细胞分为胞质染色不均一、胞内颗粒明显和胞质染色均一、胞内颗粒不明显的两类；透射电镜超薄切片观察显示，颗粒明显的细胞胞质内线粒体、高尔基体等细胞器较丰富，颗粒不明显的细胞胞质内细胞器较少；负染结果表明血细胞主要分为表面不光滑、突起明显和细胞表面光滑、突起较不明显的两类。

The stable clones are further identified by RT-PCR and Western blot; 6 MTT assay is used to investigate the effect of ZNRD1 on the cell growth of cells (AGS, SGC7901, MKN28, NIH3T3, GES-1); 7 Soft agar assay is used to investigate the effect of ZNRD1 on the clonality of cells (AGS, MKN28); 8 Nude mice assay is used to investigate the effect of ZNRD1 on the cell growth of gastric cancer cells (AGS, MKN28); 9 Flow cytometry is used to investigate the effect of ZNRD1 on the cell cycle distribution of cells (AGS, MKN28, NIH3T3, GES-1); 10 Flow cytometry is used to investigate the effect of ZNRD1 on the cell apoptosis of cells (AGS, MKN28, NIH3T3); 11 MTT assay is used to investigate the effect of ZNRD1 on the drug sensitivity of cancer cells (SGC7901, SGC7901/VCR, HL-60, HL-60/VCR) in vitro; 12 SRCA is used to investigate the effect of ZNRD1 on the drug sensitivity of gastric cancer cells (SGC7901, SGC7901/VCR) in vivo; 13 Flow cytometry is used to investigate the effect of ZNRD1 on adriamycin accumulation of cancer cells (SGC7901, SGC7901/VCR, HL-60, HL-60/VCR); 14 Transmission electron microscope is used to investigate the effect of ZNRD1 on the sensitivity of SGC7901 cells towards drug-induced apoptosis; 15 Flow cytometry and DNA ladder assay are used to investigate the effect of ZNRD1 on the sensitivity of cells (SGC7901, SGC7901/VCR, HL-60/VCR) towards drug-induced apoptosis; 16 Microarray is used to investigate the profiling of ZNRD1-responsive genes in gastric cancer cells (AGS, MKN28, SGC7901, SGC7901/VCR); 17 RT-PCR and Western blot are used to identify the results of microarray; 18 Reporter gene assay is used to investigate the effect of ZNRD1 on the transcriptional activity of cyclin D1; 19 Reporter gene assay is used to investigate the effect of ZNRD1 on the transcriptional activity of MDR1; 20 Kinase assay is used to investigate the effect of ZNRD1 on the activity of cyclin E-CDK2 kinase; 21 The antisensenucleic acids of p21 is used to inhibit the expression of p21, and flow cytometry is used to investigate the effect of p21 on ZNRD1-induced cell cycle arrest in gastric cancer cells; 22 The antisensenucleic acids of p27 is used to inhibit the expression of p27, and flow cytometry is used to investigate the effect of p27 on ZNRD1-induced cell cycle arrest in gastric cancer cells; 23 Liposome is used to up-regulate the expression of Skp2, and flow cytometry is used to investigate the effect of Skp2 on ZNRD1-induced cell cycle arrest in gastric cancer cells; 24 Western blot is used to investigate the effect of ZNRD1 on the stability of Skp2 and p27 in gastric cancer cells; 25 MVD assay is used to investigate the effect of ZNRD1 on the angiopoietic activity of gastric cancer cells; 26 ELISA is used to investigate the effect of ZNRD1 on the expression of VEGF165 in gastric cancer cells; 27 The roles of DARPP-32 in MDR of gastric cancer cells are investigated using gene transfection, MTT assay, SRCA, flow cytometry and DNA ladder assay.

应用杂交瘤技术制备ZNRD1的首个单克隆抗体；2）利用RT-PCR、Western blot和免疫组化检测ZNRD1在胃癌组织、胃炎组织、正常胃上皮组织、胃癌细胞和正常胃组织上皮细胞中的表达；3）构建ZNRD1的小干扰RNA载体，并测序鉴定；4）利用脂质体将ZNRD1的真核表达载体及其空载体转染胃癌细胞（AGS、SGC7901、MKN28）和小鼠成纤维细胞（NIH3T3），G418筛选后进行鉴定；5）利用脂质体将ZNRD1的小干扰RNA载体及其空载体转染药敏胃癌细胞（SGC7901）、正常胃组织上皮细胞（GES-1）、对长春新碱耐药的胃癌细胞（SGC7901/VCR）、药敏白血病细胞（HL-60）、对长春新碱耐药的白血病细胞（HL-60/VCR），G418筛选后进行鉴定；6）利用MTT实验检测ZNRD1高/低表达对细胞（AGS、SGC7901、MKN28、NIH3T3、GES-1）生长的影响；7）通过软琼脂克隆形成实验检测上调ZNRD1对AGS、MKN28细胞克隆形成能力的影响；8）通过裸鼠成瘤实验检测上调ZNRD1对AGS、MKN28细胞体内成瘤性的影响；9）通过流式细胞仪分析ZNRD1高/低表达对细胞（AGS、MKN28、NIH3T3、GES-1）的细胞周期的影响；10）通过流式细胞仪分析上调ZNRD1对细胞（AGS、MKN28、NIH3T3）的凋亡的影响；11）通过MTT实验检测ZNRD1高/低表达对细胞（SGC7901、SGC7901/VCR、HL-60、HL-60/VCR）体外药物敏感性的影响；12）通过肾包膜下移植法检测ZNRD1高/低表达对细胞（SGC7901、SGC7901/VCR）体内药物敏感性的影响；13）通过流式细胞仪分析ZNRD1高/低表达对细胞（SGC7901、SGC7901/VCR、HL-60、HL-60/VCR）内阿霉素蓄积和泵出的影响；14）通过透射电镜检测上调ZNRD1对SGC7901细胞凋亡敏感性的影响；15）通过流式细胞仪和DNA梯度试验检测ZNRD1高/低表达对细胞（SGC7901、SGC7901/VCR、HL-60）凋亡敏感性的影响；16）通过基因芯片检测ZNRD1高/低表达对胃癌细胞内基因表达谱的影响；17）利用RT-PCR、Western blot对基因芯片的结果进行鉴定；18）利用报告基因实验检测ZNRD1对cyclin D1的启动子活性的调节作用；19）利用报告基因实验检测ZNRD1高/低表达对MDR1的启动子活性的调节作用；20）利用激酶试验检测ZNRD1对cyclin E-CDK2 激酶活力的影响；21）利用反义核酸技术抑制p21的表达；通过流式细胞仪检测抑制p21对ZNRD1介导的细胞周期阻滞的影响；22）利用反义核酸技术抑制p27的表达；通过流式细胞仪检测抑制p27对ZNRD1介导的细胞周期阻滞的影响；23）利用脂质体转染法上调Skp2的表达；通过流式细胞仪检测上调Skp2对ZNRD1介导的细胞周期阻滞的影响；24）利用Western blot检测ZNRD1对p27和Skp2的蛋白稳定性的影响；25）利用微血管密度实验检测ZNRD1对AGS、MKN28细胞裸鼠移植瘤微血管形成的影响；26）利用ELISA检测ZNRD1对AGS、MKN28细胞培养上清和移植瘤匀浆中VEGF165含量的影响；27）利用脂质体转染法、MTT实验、肾包膜下移植法、流式细胞仪和DNA梯度试验检测新耐药相关分子DARPP-32对细胞（SGC7901、SGC7901/VCR、对阿霉素耐药的胃癌细胞SGC7901/ADR）多药耐药表型的影响；利用脂质体转染法和MTT实验检测下调ZNRD1对DARPP-32介导的胃癌多药耐药的调控作用。

E studied expression levels of WAVE1 in six leukemia cell lines (the human Jurkat T leukemia cells, U937 histiocytic lymphoma cells, Burkitts lymphoma cell Raji, acute promyelocytic leukemia cell HL-60, chronic myelogenous leukemia cell K562 and K562/A02) by Western blotting analysis. Levels of WAVE1 expression were high in all six human leukemia cancer cell lines. In contrast, the constitutive expression levels of WAVE1 were noticeably lower in normal human peripheral blood mononuclear cells, or non-blood cancer cell-lines, including human lung A549 cancer cells, Hela cervical cancer cells, MG-63 osteosarcoma cells, CNE2 nasopharyngeal carcinoma cells, human umbilical vein endothelial cell, QSG7701 hepatocarcinoma cells, and WI-38 lung fibroblastoma cells.

AVE1在人类血液肿瘤细胞系(人T细胞白血病细胞系Jurkat、人组织细胞淋巴瘤细胞系U937、人Burkitts淋巴瘤细胞系Raji、人原髓细胞白血病细胞系HL-60、人慢性髓原白血病细胞系K562和K562／A02)中高表达，在非血液肿瘤细胞系(人肺腺癌细胞系A549、人宫颈癌细胞系Hela、人成骨肉瘤细胞系MG-63、人鼻咽癌细胞系CNE2、人脐静脉内皮细胞系HUVEC、人肺成纤维细胞系WI-38、人肝上皮细胞系QSG7701)以及正常人外周血单个核细胞中低表达或不表达。

Trans-Blot Cells and Systems 170-3825 Trans-Blot Cell With Wire Electrodes and PowerPac HC Power Supply, 100120/220240 V, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm), power supply, power cord, instructions 170-3850 Trans-Blot System With Plate Electrodes and PowerPac HC Power Supply, 100120/220240 V 170-3853 Trans-Blot System With Plate Electrodes, Super Cooling Coil, and PowerPac HC Power Supply, 100120/220240 V, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm), power supply, power cord, instructions 170-3910 Trans-Blot Cell With Wire Electrodes, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm) 170-3939 Trans-Blot Cell With Plate Electrodes and Super Cooling Coil, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm) 170-3946 Trans-Blot Cell With Plate Electrodes, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm) Trans-Blot Cell Accessories 170-3912 Super Cooling Coil, required for all high-intensity transfers 170-3913 Gel Holder Cassette, includes 2 fiber pads 170-3914 Fiber Pads, 15.5 x 20.5 cm, 6 170-3920 Trans-Blot Standard Wire Electrode Card, cathode 170-3921 Trans-Blot Standard Wire Electrode Card, anode 170-3922 Trans-Blot Cell Buffer Tank 170-3923 Trans-Blot Cell Lid With Power Cables 170-3943 Trans-Blot Platinum Anode Plate Electrode 170-3944 Trans-Blot Stainless-Steel Cathode Plate Electrode 170-3945 Trans-Blot Plate Electrode Pair, platinum anode and stainless-steel cathode 16 规格:说明: Trans-Blot Plus

电泳转印槽组件 1。缓冲液槽及带有电缆的盖 2。凝胶支架转印夹 3。纤维衬垫 4。电极丝 5。电极板 6。特级冷却芯 Trans-Blot 转印槽是功能灵活的转印设备，可理想地用于多种转印应用。Trans-Blot 转印槽特点包括：*能进行多胶转印，可容纳3 块PROTEAN I xi 凝胶、6块Criterion 凝胶、12块Mini-PROTEAN 3 或Ready Gel 预制胶*多组参数灵活可设，可调节的电压设置（从30 V 的过夜转印到200 V 的1 小时快速实验）*电极间距设置为8 cm 用于标准印迹杂交，或设置为4cm 用于高强度印迹杂交*可选择板式电极：涂有铂金的钛作为正极，不锈钢为负极，能提供高强度电场和比其它电极更高的电流密度。或选择较经济的铂金电极丝*通过特级冷却芯和水循环仪来调节温度―是天然酶（4°C）或高强度转印的理想选择，随着转印时间增加（多达24 小时），不会引起缓冲液耗竭（在高强度转印中必须使用冷却芯，也推荐用于所有板式电极的应用）*带铰链的凝胶支架转印夹能避免滑动，确保凝胶与印迹膜间的紧密接触；每个转印夹都有颜色标记以保证在转印槽中的正确定位 Trans-Blot 转印槽的锁闭凝胶支架转印夹系统。转印夹（1）支撑凝胶（2）印迹膜（3）两侧有纤维衬垫和滤纸（4）确保凝胶三明治内的完全接触。凝胶夹垂直插入缓冲液槽中（5）。

A carrier gas such as nitrogen is directed through line 20 and valve 22 to connect with line 26 and mix with the gas sample.

如氮气之类的载体通过管线20和阀22引入，与管线26相通，与气体样品混合。

But for the most part, knaves and parasites had the command of his fortune

然而支配他的家产的大多是恶棍和寄生虫。