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power transistor相关的网络例句

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与 power transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

The structure of the circuit is mainly used in power systems of portable electronics. A super β lateral PNP is used as the output pass transistor,so that the design of this structure has low dropout, low quiescent current, low-linear regulation and load regulation characteristics, and has the functions of ON/OFF、the thermal 、overvolt and overcurrent profection.

该电路主要应用于便携式电子产品的电源系统中,调整管采用超β横向PNP管,使其具有低压差、低静态电流、低线性调整率和低负载调整率的特点,同时含有使能开关、过温、过压和过流保护等功能。

Monolithic Microwave Integrated Circuit; Pseudomorphic High Electron Mobility Transistor; GaAs; Nonlinear Model; Power Amplifier

微波单片集成电路;赝配高电子迁移率晶体管; GaAs;非线性模型;功率放大器

Using 0.15-micron-gate-length GaAs pseudomorphic high-electron-mobility-transistor device technology, the power amplifier covers the 17 to 25 GHz frequency bands and has a signal gain of 20 decibels with +28 dBm P1dB compression point.

采用0.15微米的高电子移导率场效晶体管器件技术的这一功率放大器的频率范围为17~25 GHz,增益为20分贝(相对+28 dBm P1dB压缩点)。

A 2.6 GHz power amplifier is designed and implemented in hybrid microwave integrated circuit using GaAs pseudomorphic high electron mobility transistor for WiMAX applications.

本论文采用砷化镓拟态高电子移动率电晶体研制应用於全球互通微波存取系统之2.6GHz功率放大器混成微波积体电路。

A bipolar pulse gener AT or with A valanche Transistor is introduced which uses two paralleled tubes to enhance the amplitude of the output pulse. Meanwhile the power supply voltage can be adjusted, so better synchronous triggering can be performed.

介绍了一种双极性雪崩三极管脉冲产生器电路;电路采用双管并联以增大输出脉冲的幅度,并采用调节电源电压的方法来达到良好的同步触发。

We proposed three brand new full adders which is low power and realized in Bootstrapped Pass Transistor Logic.

为了使得有全加器有较低的功率消耗,本论文提出三个全新的全加器电路,其电路架构是以Bootstrapped传输逻辑闸所实现的全加器电路。

There are transistor faults of conduction through and open easily to be happened in the power unit of generator excited system.

在发电机励磁系统功率单元中最常见的故障有晶闸管直通和晶闸管开路故障。

A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.

采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。

Based on the voltage pulse width modulation control strategy with single transistor chopped, the behavior patterns of chopping current and freewheeling current were analyzed under the single phase faults of power converter.

基于电压脉宽调制斩单管控制策略,分析变换器单相功率管故障情况下,斩波电流和续流电流的故障表现。

The inventions that meet these criteria, in chronological order, are the compass, the mechanical clock, the glass lens, the printing press, the steam engine, the telegraph, electric power, wireless communications, antibiotics, and the transistor.

按照时间顺序排列,符合这些标准的发明是:指南针,机械钟表,玻璃镜片,印刷机,蒸汽机,电报机,电力,无线通信,抗生素和晶体管。

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