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power transistor相关的网络例句

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与 power transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

Finally, some effective measures to protect the high-power transistor are presented by simulation, which provides the theoretical guidance for the modified design of the exciter of the generator.

因此必须对该类故障产生的机理进行分析,查明影响因素,为励磁系统的改进设计提供理论依据,提高发电机系统

In this paper ,the failure analysis of a type of high frequency power transistor is introduced .

介绍了对某型号高频大功率晶体管进行的失效分析。

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体-宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

Because it integrated power transistor, Power IC is relatively more difficult, both in circuit design and process technology.

开关电源由于其在性能、体积、价格等方面的优势,在电源市场中占有的份额不断增长。

Power integrated circuit is one of the most important branches of integrated circuit, including power transistor and control circuit and output drive.

功率集成电路是集成电路的重要分支,至少包含一个半导体功率器件和一个独立功能电路的单片集成电路,其在电力电子、自动控制、家电通信、汽车电子等领域扮演着一个重要的角色。

A power transistor sometimes has an associated sense transistor.

有时一个功率管会有一个相关的敏感管。

This circuit faults is under the arm, bridge, no power transistor must therefore be adopted by isolating circuit or special driving power.

该电路的缺点是上、下桥臂的功率晶体管不共地,因此必须采用专门驱动电路或采用隔离电源。

The limitation of power amplifier design in CMOS process is analyzed first. Then we construct and analyze the model of power transistor by using Matlab software.

首先分析了CMOS工艺对功率放大器设计的限制,然后使用Matlab对功放晶体管进行建模,分析其功率特性,通过仿真,提出了CMOS功率放大器的设计和调试方案。

There is sufficient margin for a collector loss in a power transistor, and the high speed high fT transistor which was moreover excellent in the high region property is adopted.

的截止频率是90MHz的数量,并抑制这种晶体管的开关失真是无法避免公司一流的,而且,还实现了平坦的高区域相反应。

In this paper, based on high-power switching devices insulated gate bipolar transistor, a novel sinusoidal signal generator applied to UHV-FTRTPS is developed. The generator possesses plenty of merits: uncompounded structure, less components and easy maintenance.

提出采用大功率开关器件绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)来代替模拟器件产生特高压试验所需的正弦信号,结构简单、元器件数目少、易维护。

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