查询词典 polycrystalline

By means of zone melting recrystallization method, polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained, which could act as a seeding layer.

经区熔再结晶后，薄膜的晶粒尺寸有了较大的提高，而且迁移率较高，这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层。

In this paper, we adopted rapid thermal chemical vapor deposition and zone melting recrystallization methods to deposit polycrystalline silicon thin films and studied the preparation technologies of the solar cells on SiSiC and Al_2O_3 ceramic substrates by high temperature method.

本文采用快速热化学气相沉积和区熔再结晶相结合的方法，在SiSiC和Al_2O_3等陶瓷衬底上制备多晶硅薄膜，并初步探索了高温路线制备多晶硅薄膜太阳电池的相关工艺。

The polycrystalline or amorphic diamond thin films may have three ways of field emission:"antenna effect", the emission site of quasi-n-type and low work function, the field emission of graphite particles.

多晶或非晶金刚石薄膜可能存在三种场发射方式：&天线效应&，准n型低功函数发射点和石墨微粒场发射。

ITO films were deposited as polycrystalline with a cubic bixbyite structure and a preferred orientation with the (111) plan parallel to the substrate.

该薄膜为n型简并的半导体多晶膜，具有纯三氧化二铟的立方铁锰矿结构，薄膜的最佳取向为（111）方向。

The structure of ITO films prepared on flexible substrate for different concentration of SnO2 is polycrystalline bixbyite, the crystal lattice parameter of films increases and distortion of crystal lattice is more obvious with the increasing of SnO2 concentration.

用不同掺杂比例的靶材制备的薄膜均为多晶纤锌矿结构，掺杂比例增大，样品的晶格常数变大，晶格畸变明显。

At present home uses improved Xi Menzi for the most part the polycrystalline silicon project of the law, did not solve technology of chloric hydrogen sulfide.

目前国内大部分采用改良西门子法的多晶硅项目，都未解决氯氢化技术。

After using system of chloric hydrogen sulfide, of 4 chloridize silicon reclaim the problem gets settlement, can change into silicon of 3 chloric cyanogen, and a kind of raw material that this is polycrystalline silicon.

在采用了氯氢化系统后，四氯化硅的回收新问题得到解决，可以转换成三氯氰硅，而这正是多晶硅的一种原料。

8Co alloy have been studied by means of optical and transmission electron microscopy, X-ray diffraction, dilatometry, tensile tests and Vickers hardness measurements. The inherent factors responsible for the low shape memory effect of polycrystalline Fe-Mn-Si alloys have been revealed.

本文通过金相、透射电镜及X-射线衍射分析以及热膨胀、拉伸和硬度试验等手段研究了Fe-25.6Mn-5.1Si-4.1Ni-1.8Co合金中应力诱发γ→ε马氏体相变和形状记忆效应，揭示了引起多晶Fe-Mn-Si系记忆合金形状记忆效应低的内在因素。

The most common materials are amorphous silicon (a-Si, still silicon, but in a different form), or the polycrystalline materials : cadmium telluride and copper indium diselenide.

最常用的材料是非晶硅(a-si，依然是硅，但是不同的形式)或者是多晶硅，镝化镉，铜铟砷CIS，CIGS

Project Introduction: Trichlorosilane, also named Silicochloroform ,is mainly used in the synthesis of organic silicone, alkyl, aryl and organic functional group chlorosilane. It's the most basic monomer of the organic silane coupling agent,and the production material for semiconductor silicon and silicon; Manufacturing process of the tetrachlorosilane includes the reciprocal effect by the trichlorosilane steam and the hydric steam which has been heated up to 1700-2500SiCK by the plasma accelerator; the steam compound in the reactor goes into the condensing system that separates trichlorosilane. After that, polycrystalline silicon can be made.

三、项目概况：三氯氢硅：又名三氯硅烷、硅氯仿，主要用于有机硅烷和烷基、芳基以及有机官能团氯硅烷的合成，是有机硅烷偶联剂中最基本的单体，也是生产半导体硅、单晶硅的原料；四氯氢硅工艺包括在等离子加速器内加热到1700-2500SiCK的氢气流和四氯氢硅的蒸汽相互作用，在反应器内形成的蒸汽气体混合物进入分离三氯氢硅的冷凝系统，下步可制取多晶硅。

They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.

他们没有侵略性，但我大喊，并在他们的方向扔石头让他们过的线索，远离我，以防万一。

In slot 2 in your bag put wrapping paper, quantity does not matter in this case.

在你的书包里槽2把包装纸、数量无关紧要。