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polycrystalline相关的网络例句

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与 polycrystalline 相关的网络例句 [注:此内容来源于网络,仅供参考]

Influence of RF power on structure and optical properties of polycrystalline silicon thin film.

沉积功率对多晶硅薄膜结构和光学性质的影响。

Recently, low temperature polycrystalline silicon thin-film transistors have been investigated extensively for their wide applications.

近年来低温复晶矽薄膜电晶体已经引起大量的研究,其应用的方向是相当广泛的。

We can crystallize polycrystalline silicon under the conditions about laser power between 9 and 11W, scanning speed between 4 and 15 cm /s, 120 torr chamber pressure.

我们发现,在能量9~11W、速度4~15 cm/s、腔体压力在120 torr的条件下,能够结晶出高品质的复晶矽薄膜。

Dry sliding friction between the polycrystalline Al59Cu25.5Fe12.5B3 quasicrystals and coating of the diamond-like carbon was carried out by self-made tribometer under different conditions.

在不同摩擦试验条件下,准晶材料Al59Cu25.5Fe12.5B3与类金刚石涂层在自制的摩擦仪进行了干摩擦试验。

P. P. Raevski〓, and pointed that this polarization at grain boundary between WO〓 monoclinic and triclinic phases causes a modification to Schottky barrier is origin of nonlinear electrical characteristic of tungsten oxide polycrystalline ceramics.

Raevski〓的铁电半导体非线性电输运理论模型的框架内,我们重点考虑了铁电极化对WO〓陶瓷非线性电输运特性的影响,指出由于三斜和单斜晶相的共存,在其晶界处存在的电极化可以对Schottky势垒产生一种修正,是导致出现压敏现象的一个重要因素。

IV Investigations of Ta/CoFe/Ta sandwich unpatterned and patterned films by XMCDThe initial specimens are polycrystalline Co_(0.9)Fe_(0.1) films fabricated by RF magnetron sputtering, and that patterned are one-dimension ferromagnetic lattice fabricated by laser interference lithography.

制备出光栅条纹方向与磁诱导方向垂直(来源:d2ABC论文网www.abclunwen.com)的图形薄膜系列,SEM图像显示条纹的实际宽度分别为0.6μm、1.9μm、3.2μm、6.0μm、9.0μm,条纹宽度的均一性良好,小尺寸的磁条宽度与设计尺寸略有出入,大尺寸下符合得很好。2。

Products include: strengthening the Senior file polycrystalline bone china, porcelain strengthened magnesia, Porcelain silverlight, Diamond porcelain, vitreous enamel knot patterns, and daily matching tableware, tea sets, stainless steel, kitchen equipment, fittings miscellaneous items, import of domestic glassware , gold ornaments, silverware, disposable supplies hotels, bed sheets, blankets and so on.

产品包括:高中档多晶强化骨瓷、镁质强化瓷、银光瓷、金钻瓷、结纹釉瓷、日用配套餐具、茶具、不锈钢、厨房设备、配件杂件、进口国产玻璃器皿、金器、银器、宾馆一次性用品、床单、被子等。

The result shows that it has a polycrystalline hexagonal wurtzite structure with highly preferred orientation along the (002) plane.

将这种薄膜在空气和真空中以不同的温度进行了退火处理,并对薄膜进行了XRD分析和光电性能研究。

The results showed that the TiN andN films are polycrystalline phase. The properties and structure of TiN films are mainly determined by the N2 mass flow rate, and as the N2 mass flow rate increases, the structure of the TiN films transforms to f.c.c. type leading to better the properties of films. The presence of negative bias voltage can optimize the grain of TiN films, lower the defect proportion and denser the films, which improves the hardness of films. The TiN films conform to the free carrier absorption mechanism and there are many of free electrons with lower N content in TiN films. With the increase of N content, the quantity of free electrons and reflectivity of films decrease, and the plasma frequence shifts to the lower energy, which leads to the regular change of colors of films from silver, yellowy, golden to yellow-red, meanwhile the lightness of films decreases. The goldenN film consists of TiN and ZrN phase, but belongs to a sigle f.c.c. structure with (111) preferred orientation. The Zr-doping dosen't change the position of the valance band, conduction band and forbidden band ofN film, but leads to the presence of new energy levels, which is the reason thatN film remains golden. The transparent hard films with good corrosion resistance and high hardness have been prepared and the further reseachs showed that the grain size of those films is by far smaller than the wave length and the width of forbidden band of those films is very broad, is the reasons that those films are transparent.

研究表明:氮化钛和N 薄膜为多晶态,氮流量决定了氮化钛薄膜的结构和性能,增加氮流量能使氮化钛薄膜的结构向面心立方结构转变,从而得到性能良好的氮化钛薄膜;施加负偏压能优化氮化钛晶粒和减少薄膜中的缺陷,使膜层变得更致密,从而提高薄膜硬度;氮化钛主要遵循自由载流子光吸收,氮含量较少时薄膜中的自由电子数目较多,随着氮含量的增加,薄膜中的自由电子数目不断减少,反射率逐渐降低,等离子体频率向低能端移动,从而使薄膜颜色出现规律变化,由金属色银白色到淡黄、金黄再到红黄,并且薄膜亮度呈下降趋势;金黄色的N 薄膜中存在TiN 和ZrN 的分离相,但其为单一的面心立方结构并具有(111)面择优取向;相对于TiN 薄膜,Zr 掺杂后,并没有使薄膜的导带、价带和禁带发生变化,只是在TiN 禁带内增加了新能级,这也正是掺杂Zr 后,薄膜仍

Piezoelectric properties of materials can also be produced by artificial methods, that is, with iron power to impose polycrystalline material of an electrostatic field, such material is commonly used in barium titanate and lead zirconate titanate.

材料的压电性能也可以用人工的方法产生,那就是在具有铁电多晶材料上施加一个静电化场,这类材料中常用的是钛酸钡和锆钛酸铅。

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