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photoetching相关的网络例句

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与 photoetching 相关的网络例句 [注:此内容来源于网络,仅供参考]

The professional skill area of Invarium specialty is a graph the research and development of integrated science and technology, can realize design of excellent film of smooth attack by surprise and craft to optimize with the speed of industry lead, include make from film of attack by surprise, to photoetching and etched whole workmanship flow.

Invarium拿手的专业手艺区域是图形综合科技的研发,能够以业界超前的速度实现出色的光掩膜设计和工艺优化,包括从掩膜建造、到光刻和蚀刻的整个制造工艺流程。

A micro injection mold was designed and manufactured. Micro silicon mold with micro runner and gate were made by using photoetching and ionetching.

设计并制作了微注射成形模具,采用光刻、离子蚀刻工艺相结合在硅片上制得了微零件型腔、流道及浇口。

In this paper, an experiment was performed on a new type microlens array, which has extreme high fill-factor (almost 100%), for the first time to our knowledge. In the microfabrication process, photolithography photoetching method and ion-exchanging technology were introduced and investigated for the special glass substrate.

本文首次制备出一种新型的平面微透镜阵列-方形孔径平面微透镜阵列,该类器件经理论分析具有极高填充系数,可以说近达100%。

IBM research department is famous science and technology member hold senior manager RonaldGoldblatt concurrently to express, 2 companies hope pressworks in the flat of chip circuit in, research and development of benefit chemically product a kind of better method, when law of this one party is making chip, will resemble different material pile has like cake, give very small microprocessor package through be being made to every photoetching.

IBM研究部门著名科技员兼高级司理RonaldGoldblatt暗示,二公司但愿在芯片电路的平板印刷中,操纵化学制品研发一种更好的办法,这一办法在制造芯片时将把分歧的材料象蛋糕一样进行堆叠,经由过程对每层的光刻制造出很是小的微措置器组件。

The main characteristics, such as the matching behaviors of films coated on substrates in fabrication of concave cylinder photoresist microlens arrays, the structural parameter design of photoetching mask which is relevant to the fabrication of the microlens, and control basis of photoresist mask technological parameters, are analyzed respectively.

分析了在光致抗蚀剂柱凹微透镜图形制作过程中的膜系匹配特性,与制作该种微透镜有关的光掩模版的主要结构参数,以及光致抗蚀剂掩模工艺参数的控制依据等。

The invention provides a method of decreasing big pattern hollow during metal and polysilicon chemical and mechanical rubbing, it mainly uses photoetching and etching technique, combining decorated chemical and mechanical rubbing method, avoids big pattern hollow when metal and polysilicon is rubbed.

本发明提供一种在金属和多晶硅化学机械研磨中减少大图案凹陷的方法,主要通过以光刻和蚀刻技术结合修饰性化学机械研磨的方法,避免对大图案的金属或者多晶硅进行研磨时出现过度凹陷。

After treated the surface of NiNb2O6 photoelectrode by mechanical polishing +chemical etching + photoetching, the stable values of the differential capacitance of the spacecharge layer are measured,the relationship between flatband potential Vfb and pH value of the electrolyte is obtained,and the value of Vfb is compared with its theoretical calculating value.

对电极进行机械抛光加化学抛光加光抛光处理后,测得了NiNb2O6半导体光电极空间电荷层的微分电容的稳定值,得到了平带电势Vfb与电解液pH值间的关系,并与Vfb的理论计算值进行了比较。

Oxidation, diffusion, photoetching process and etching technology were adopted to achieve thin silicon foil with a thickness of 3 to 4 micrometers. The surface roughness was about 10nm and the grain size of silicon foil was nanometer scale. The preparation parameters were studied to control the roughness of thin silicon foil .

通过台阶仪测量厚度在3~4μm的Si平面薄膜,在扫描范围为1000μm时,它的表面粗糙度为几十纳米;SEM测量表明,Si薄膜表面颗粒度在纳米量级;探讨了采用控制扩散、腐蚀参数和表面修饰处理来降低Si膜表面粗糙度的方法。

For instance the semiconductor that make needs to join miscellaneous craft, control specific amount with respect to need, and cannot as same before, allow to have free combination by foreign matter, this will increase the difficulty that IC creates greatly; The insulation layer of semiconductor also the character because of photoetching chemical itself, uneven degree will affect IC directly whether move normally, point out as Dr. Chen Zijiang of IBM academician, when the secondary floor width between circuit the likelihood is 320 dust, and among them indentation is likely 80 dust, that is meant, be in the place of a few extremes, secondary floor width has 160 only dust... to moment, can be current data still used?

比如建造半导体需要参杂的工艺,就需要节制具体的数目,而不克不迭如同以前一样,任由杂质进行自由组合,这将大大增添IC制造的难度;半导体的绝缘层也将因为光刻化学药品本身的特征,凹凸不服的程度将间接影响IC能否正常运行,身为IBM院士的陈自强博士指出,当电路之间的隔层宽度可能为320埃,而其中的凹坑就有可能为80埃,那就象征着,在一些极端的处所,隔层宽度只有160埃……到时辰,今朝的材料还能用么?

A glass die, a micro replication characteristic of PDMS and an electroplating technology are used to make the three-dimensional microelectrode array. A precise cutting machine is used to cut the glass to form a column array and a mixture of HF and NH4F is used to produce the corresponding structure serving as the die of the micro replication of PDMS. The photoetching technology is left out and the limitation of a photoresist on the dimension of the three-dimensional structure is eliminated; therefore the longer microelectrode array can be made. The length of the microelectrode array depends on the incision depth of the glass and the electroplating technology of deep hole of the metal.

本发明利用玻璃模具、PDMS的微复制特性和电镀技术制作三维微电极阵列,用精密切割机切割玻璃形成柱状阵列,用HF和NH 4 F的混合液腐蚀出相应的结构作为PDMS微复制的模具,免去了光刻工艺,消除了光刻胶对三维结构尺寸的限制,可以制作更大长度的微电极阵列,这一长度决定于玻璃的切割深度和金属的深孔电镀技术。

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