查询词典 photo-transistor

Application procedure. Please attach a recent 2-inch bust and hatless photo.

入学申请表2份（上网申请时列印，请贴妥2吋半身脱帽近照）。

Submission: resume, diploma, ID, Hukou, hatless photo (2 pcs).

提交材料：本人简历、学历学位证书、身份证、户口等证明材料原件及复印件，本人近期免冠照片2张。

Photo Gallery: Erosion and Weathering Sandbars swirl beneath Oregon Inlet in Cape Hatteras National Seashore on North Carolina's Outer Banks.

意译：侵蚀和风化图片画廊。涡状形的沙洲在俄勒冈州水湾哈特拉斯角国家的海滨在北卡罗莱纳州的外堤。

Photo shot on assignment for, but not published in,"Tall Order: Cape Hatteras Lighthouse Makes Tracks," May 2000, National Geographic magazine

图片为《国家地理杂志》2000年5月刊"哈特拉斯角灯塔迅速迁移——苛刻的要求"一文而摄，未刊发。

TO HAVE A PHOTO IN YOUR HAND, IT'S THE REAL THING.

但是亲自动手去拍摄一张照片，那才是最真实的。

I want to have a look at your photo.

我想看一下你的照片。

Photo above: We made our headboard and bed-side tables.

床头板和放在床旁边的桌子是我们自己做的。

Entertainment Canton Heat Transfer "changshu" Heat Transfer Products Ltd. Product introduction categories:"1" Offset Hectograph transfer paper heat transfer paper color printing, photo effects figure?

广州艺都烫画《常熟》有限公司产品介绍烫画类：《一》柯式烫画纸 Hectograph transfer paper 分色印刷，照片效果

And I'm gonna see if Hef can hook me up with an internship at the photo department.

然后我要看看海夫能不能让我在摄影部实习

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

This paper discusses design and realizable methods of remote test output interface from logical design angle.

本文从逻辑设计的角度讨论遥测输出接口的设计及实现方法。

This also 星体投射plies to buildings, structures and geological features.

这也适用于建筑物和地质特征。