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passivation相关的网络例句

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与 passivation 相关的网络例句 [注:此内容来源于网络,仅供参考]

Silicon nitride passivation layer existed in standard CMOS process is used as hydrogenous ions sensitive layer, ISFET with multi-layer floating electrode structure works as the sensing unit.

介绍了一种基于上华0.6μmCMOS工艺实现的pH值传感器集成电路的设计和研究,它采用标准CMOS工艺提供的Si3N4钝化层作为氢离子敏感层,并以多层浮栅结构的ISFET作为传感单元。

In this paper the concerted anticorrosion action of the hydrolyzate of egg and anodic protection on normal carbon steel is found by measuring the anodic passivation curve of normal carbon steel in 2 mol/L (NH 4) 2CO 3 solution,of different concentration of the hydrolyzate of egg s.

通过测定碳钢在含不同浓度鸡蛋水解物的2mol/L(NH4)2CO3溶液中的阳极极化曲线,发现了适当浓度的鸡蛋水解物与阳极保护对碳钢的协同缓蚀作用

There is no obvious relation between temperature and semiconductor intrinsic properties. The passivation film represents the n-semiconductor characteristic in the potential interval of -0.5~0.1V, the p-semiconductor characteristic in the potential interval of 0.1~0.9V, and the n-semiconductor characteristic in the potential interval of

温度对于316L不锈钢钝化膜的半导体本征性质没有根本的影响:在-0.5~0.1V电位区间内钝化膜呈p型半导体特征;在0.1~0.9V电位区间内钝化膜呈n型半导体特征;在0.9~1.1V电位区间内钝化膜呈p型半导体特征。

However, there are still some disadvantages in zinc electrode, such as metamorphose dendritic growth, erosion, passivation etc.

但是由于锌电极存在变形、枝晶、腐蚀和钝化等问题,使得锌电极在用于二次电源时的性能降低,这也是锌电池在应用中存在的严重问题。

In paper effect of oxygen and carbon action on minority carrier lifetime in thermal process of mc-Si cell and properties of Si_3N_4 film and effects of antirefle-ction and passivation were studied.

为此本文重点研究了多晶硅片在电池制造热工艺中氧碳的行为及其对少子寿命的影响;并研究了氮化硅薄膜的性能及对多晶硅电池的减反射及钝化作用。

The coated strip is protected by new colorless non-poisonous chemical passivation and oiling free from corrosion in transportation and storage.

采用新的化学无色、无毒钝化工艺以及涂油方法对镀带进行再保护,以防止在运输、贮存过程中腐蚀。

Preferential oxidation of Ti on NiTi alloy surface has been observed and was consistent with the experimental result and the free energy of formation A G?(298K) of NiO, TiO, TiO2. Mulliken population and the partial density of state analysis showed that the interaction between Ti and O atoms was mainly donated by O 2p and Ti 4s orbital and O 2p and Ti 3d, 4s, 4p hybridization orbital. The electron structure in NiTi bulk material was not altered during 62 molecule adsorption process and the surface passivation oxide formation.

进一步对钛与氧之间相互作用本质的研究表明,O 2p轨道和Ti 4s轨道以及O 2p轨道和Ti 3d 4s 4p杂化轨道间的相互作用是NiTi合金表面氧分子吸附的驱动力,在此过程中,NiTi合金的体相结构没有发生变化,从而保证了其一系列力学性能和形状记忆特性在表面氧化后不发生明显的变化,使表面改性的工作可以安全、可靠的完成而不影响其植入人体后发挥正常的生理功能。

Mulliken population and the partial density of state analysis showed that the interaction between Ti and O atoms was mainly donated by O 2p and Ti 4s orbital and O 2p and Ti 3d, 4s, 4p hybridization orbital. The electron structure in NiTi bulk material was not altered during O〓 molecule adsorption process and the surface passivation oxide formation. Thus the mechanical properties and shape memory effect would not change after NiTi alloy surface oxidation. Stable microstructure demonstrates reliability of implant material.

进一步对钛与氧之间相互作用本质的研究表明,O 2p轨道和Ti 4s轨道以及O 2p轨道和Ti 3d 4s 4p杂化轨道间的相互作用是NiTi合金表面氧分子吸附的驱动力,在此过程中,NiTi合金的体相结构没有发生变化,从而保证了其一系列力学性能和形状记忆特性在表面氧化后不发生明显的变化,使表面改性的工作可以安全、可靠的完成而不影响其植入人体后发挥正常的生理功能。

The power supply with parallel series circuit is favourable to solve the problem of anode passivation.

与普通的可调恒流或恒压的电解电源相比,能取得更好的经济效益

It has been found that the adsorbed Au atoms may sit at the top siteabove the surface and that a passivation layer of Au atoms may passivate theSi(001) surface effectively.

结果表明, Au原子在吸附面上方的顶位吸附最稳定,Au钝化Si(001)表面可以取得明显的钝化效果。

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