查询词典 pair diode

However, care must be exercised when handling the device to avoid strong static fields that may degrade a diode junction, causing increased input leakage currents.

但是，必须注意在处理设备，以避免强烈的静态字段，可能会降低二极管的交界处，造成漏电流增加投入。

Along with the zener diode PN junction temperature change, its regulated voltage value can have the corresponding drifting.

随着稳压管PN结温度的变化，其稳定电压值会发生相应的漂移，从使用上来说其变化值越小稳压性能越好。

Simulation of PN junction diode lays the foundation for the simulations of other semiconductor elements.

本文结合非耦合数值方法，通过求解半导体方程对PN结二极管进行模拟分析，得到了一些重要物理参量分布，这为深入研究电磁辐射对半导体元件的干扰奠定了基础。

With its simplest structure –PN junction, the diode has been studied in this paper as an example for making an explanation on the physical quantity and relevant mathematical expression corresponding with respective parameter of SPICE model in the library of simulation software.

文章以结构最简单的二极管PN结作为研究对象，旨在对与仿真软件的元件库中各元件的SPICE模型参数相对应的物理量及数学表达式加以解释和说明，并就这些参数如何反映二极管的电气特性这一问题作了一定的分析。

The mechanism is studied by Monte Carlo method while 1.8MeV and 4.3MeV alpha particles irradiating the pn junction 6H-SiC diode.

为了研究6H-SiC材料制作的pn结二极管探测器的辐照特性，采用蒙卡程序模拟研究了4.3和1.8MeV能量的α粒子在辐照探测器中的物理过程。

Measurements of BE and BC junction diode properties at different temperatures have indicated that the rapid growth of BC junction leakage current with temperature is the cause of HBT degradation.

通过测量BE结和BC结在各温度的二极管特性，发现高温下BC结漏电流急剧上升，导致HBT性能退化。

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.

采用工业标准0.6μm CMOS工艺设计了以反向击穿硅p-n结为基础的光发射器件。

The heat-reaction characteristics of Ni/Si and TiN/Ni/Si structure and the regularity for forming the NiSi film have been studied deeply and formed the excellent Ni-salicide shallow junction diode.

文中对Ni／Si和TiN／Ni／Si的热反应特性以及NiSi薄膜的形成规律进行了详细的研究。制备了优质的Ni硅化物浅结二极管。

Connect the inductor/rectifier diode junction to LX and

将电感/整流二极管连接点接至LX，并尽可能减小走线长度，以降低

The thermal distributionand an expression of the maximum temperature have been obtained or the first time whenthe Q -switched Nd:YAG laser irradiates upon the PIN junction optoelectronic diode.

得到了Q开关YAG激光与PIN结光电二极管器件相互作用时的热分布、最高温度表达式和对应的实验结果。

Nowadays, most of research are to build a transmutative Petri Nets through adding controlling place sets, controlling arc sets and controlling policy to the basic Petri Nets, while the Controlled Petri Nets could be used to argue many controlling theory problems conveniently and to induce many logically and physically supervisory and solve the Event Feedback Controlling Problems and State Feedback Controlling Problem in DEDS supervisory theory.

目前大多数的研究表现为在变形后的受控Petri网基础上，利用各种方法求得各种逻辑型、结构型控制器，解决DEDS监控理论中的事件反馈控制问题与状态反馈控制问题。

On one hand, there are discussions with the works council and union about extension of short time working up to the end of September.

一方面，有讨论，工程理事会和联盟关于延长工作时间短至9月底。