查询词典 oxide

Mainly composed of silica, alumina, iron oxide, magnesium oxide and calcium oxide.

主要成分为氧化硅、氧化铝、氧化铁、氧化镁和氧化钙等。

The results indicate that only tungsten oxide grains are formed without sodium sulfate additions, while tungsten oxide whiskers with 0.20.3 μm in diameter and aspect ratio of 5-50 or tungsten oxide nanowires with 1030 nm in diameter and aspect ratio of 50200 are synthesized by some sodium sulfate additions on conditions at 180 ℃ for 1236 h. The phase composition of tungsten oxide whiskers is hexagonal tungsten trioxide. The whiskers/nanowires grow oriently through 〈200〉,〈002〉,〈202〉and〈100〉.

结果表明：未添加硫酸钠时，在180 ℃水热反应12~36 h只能得到氧化钨颗粒粉末，而添加适量硫化钠后，可制备出直径为0.2~0.3 μm、长径比为5~50的氧化钨晶须和直径为10~30 nm、长径比为50~200的氧化钨纳米线；氧化钨纳米线晶体结构良好，物相为六方晶系WO3；微/纳米氧化钨晶须/线主要沿〈200〉，〈002〉，〈202〉和〈100〉方向定向生长。

A semiconductor device including a high voltage element and a low voltage element, including: a semiconductor substrate having high voltage element region where the high voltage element is formed, and a low voltage element region where the low voltage element is formed; a first LOCOS isolation structure disposed in the high voltage element region; and a second LOCOS isolation structure disposed in the low voltage element region, wherein the first LOCOS isolation structure includes a LOCOS oxide film formed on a surface of the semiconductor substrate and a CVD oxide film formed on the LOCOS oxide film, and the second LOCOS isolation structure includes a LOCOS oxide film.

提供一种在确保高耐压元件的高耐压特性的同时使高耐压元件和低耐压元件具有良好特性的半导体装置。具有高耐压元件和低耐压元件的半导体装置包含：规定了形成高耐压元件的高耐压元件区和形成低耐压元件的低耐压元件区的半导体衬底；在该高耐压元件区设置的第一LOCOS隔离结构；以及在该低耐压元件区设置的第二LOCOS隔离结构。第一LOCOS隔离结构由在该半导体衬底的表面上形成的LOCOS氧化膜和其上形成的CVD氧化膜构成，第二LOCOS隔离结构由LOCOS氧化膜构成。

Keywords Palladium;Titanium oxide;Barium oxide;Aluminum oxide;Nitrogen oxide;Storage-reduction catalyst;Sulfur resistance;Lean burn engine emission

钯； 氧化钛；氧化钡；氧化铝；氮氧化物；储存-还原催化剂；抗硫性能；贫燃发动机尾气

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

Rail company's existing six red, four iron yellow, two black iron, an iron green, a total of 13 iron oxide pigment production line, under the holding company of Hangzhou Huayuan Germany, race, equity participation, companies such as Toda sambong an annual output of iron oxide paint 110,000 tons, including blending, roasting, ultra-fine deep processing production lines, annual output reached 10000 tons, the product varieties have iron oxide red, iron yellow, iron oxide black, iron orange, iron brown, green and ultra-fine iron, calcination deep-processing products, such as more than 50, more than 90% of export products, customers across five continents over 40 countries and regions.

公司现有六条铁红、四条铁黄、二条铁黑、一条铁绿，共十三条氧化铁颜料生产线，下属控股公司华源杭德、赛诺康、参股公司户田三峰等，年产氧化铁颜料11万吨，其中拼混、焙烧、超细深加工产品生产线，年产量达 10000余吨，产品品种有氧化铁红、铁黄、铁黑、铁橙、铁棕、铁绿以及超细、焙烧等深加工系列产品五十多个，产品90%以上外销，客户遍及五大洲四十多个国家和地区。

I plant perennial supply of chemical plating material: nickel sulphate, chloride nickel, nickel nitrate, ammonium chloride, sodium hypophosphite, sodium citrate, ammonium citrate, potassium citrate, chromium oxide, red Lead oxide, palladium chloride, SnCl2, crystal tin tetrachloride, the resistance of fuse, lithium fluoride, sulfuric acid cadmium, Na2HPO4, bismuth chloride, bismuth oxide, oxide Thallium sulfate Cobalt, cobalt nitrate, cobalt chloride, barium hydroxide, calcium hydroxide, fine chemical products.

我厂常年供应化学镀材料：硫酸镍、氯化镍、硝酸镍、氯化铵、次亚磷酸钠、柠檬酸三钠、柠檬酸三铵、柠檬酸钾、三氧化铬、红色氧化铅、氯化钯、氯化亚锡、结晶四氯化锡、电阻熔断剂、氟化锂、硫酸镉、磷酸氢二钠、氯化铋、三氧化二铋、三氧化二铊、硫酸钴、硝酸钴、氯化钴、氢氧化钡、氢氧化钙等精细化工产品。

The results indicate that the spalling behavior of oxide scale is the result of the inner and outer stress together,during rolling,the oxide scale cracks under the growth stress and thermal stress,at the same time the oxide scale also mainly undergoes alternative shearing stress in the rolling zone,the oxide scale spalls,then the reason of stripspalling is also analyzed.

结果表明：氧化膜剥落过程是内外应力联合作用的结果，轧制过程中氧化膜在长大应力和热应力作用下开裂，在轧制区内氧化膜还因受沿轧辊圆周方向的交变剪切应力作用而剥落。

It's products--White Dove brand abrasives and abrasive products include brown aluminum oxide, white aluminum oxide, pink aluminum oxide, single crystal aluminum oxide; black and green silicon carbide; grinding wheels of various kinds, abrasive stones, chips, segments, cutting wheels; abrasive cloth, abrasive paper, belts, flapping wheels,discs; CBN and synthetic diamond grains and products, etc.

主要产品为白鸽牌磨料磨具，包括各种粒度的棕刚玉、白刚玉、铬刚玉、单晶刚玉、黑碳化硅、绿碳化硅磨料及高级耐火材料；各种固结磨具如砂轮、砂瓦、油石、磨头等；各种涂附磨具如砂布、砂纸、砂带、砂盘、钢纸砂盘、磨盘、页轮等；以及各种金刚石制品、CBN制品等。

The effect of decabromodiphenyl oxide, decabromodiphenyl oxide/antimonous oxide and decabromodiphenyl oxide/red phosphorus on EPDM/PP was studied by determinating the mechanical and flame-retardant properties.

用氧指数测定和力学性能测定方法研究了十溴二苯醚(FR 10)及其与三氧化二锑(Sb2O3)、红磷配合使用对三元乙丙橡胶/聚丙烯阻燃性能和力学性能的影响。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。