查询词典 oxide

Methods: We divide the rats into 5 groups in random, with Morris method, detect the change of some active oxygen radicals such as super-oxide demitasse, Nitric Oxide Synthase, malondialdehyde etc. Also, we detect the change of cholinesterase, Monoamine Oxidize; using HE,PAS staining, immuno-histochemical technique, detect hippocampus CA1 cerebral pathology slices optical density value of NOS, CHE and lipofuscin of neural cell; detecting apoptosis rate and the expression of P53 , which are neuronal apoptosis related genes.

大鼠随机分为5组，采用"Morris水迷宫"法观察脑缺血性模型大鼠学习记忆功能，检测超氧化物歧化酶、一氧化氮合酶、丙二醛等自由基代谢异常的改变，检测胆碱酯酶、单胺氧化酶等老化相关酶的变化、脑组织神经细胞免疫组织化学技术、检查海马CA1区脑组织的病理切片，检测NOS、CHE光密度值；流式细胞技术：检测细胞凋亡率，及促细胞凋亡基因、P_(53)蛋白表达；病理切片采用HE染色、PAS染色及免疫组化法检查，检测对大鼠海马神经元细胞一般病理变化及脑细胞内脂褐含量。

Thermal oxidation treatment can increase the surface hardness and elastic modulus significantly and reduce the E /H ratio of the TC4, which indicate the treatment can enhance the wear resistance of TC4 alloy. Long time treatment can increase the thickness of the oxide layer, but the outside layer is apt to desquamate during the scratching. The oxide layer closing to substrate has better bonding properties, but microcrack forms as a result of high stress loading, which lead the layer to flake off completely.

长时间的高温氧化可以增加氧化层的厚度，但在划擦过程中氧化层发生两次脱落，表明氧化层由外表层和次外层组成，外层结合力差，易发生一次脆性剥落，内层与基体的结合强度较高，但在较大载荷作用下会产生微裂纹，导致氧化层的二次剥落。

And the emission band at 420 nm should be contributed to intrinsic diamagnetic defect in the amorphous oxide layer, while the damaged oxide layer could contribute to the bands around 420 nm.

通过真空退火之后发现470nm的谱峰明显变强了，这一实验结果证实了此峰是由纳米硅线表面氧化层的氧缺失缺陷引起的说法。

The stress dependent character of oxide trap has been a problem in the study of oxide degradation. Using the Proportional Differential Operator method, we extract the trap parameters, and study their stress dependent characteristic change.

新生陷阱的应力相关特性是氧化层退化研究的基础工作，本文利用比例差分的方法提取了陷阱参数，并研究了陷阱参数的应力相关特性。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

在一些实施方案中，渐变半导体缓冲层位于隐埋氧化物层下面，而在其他实施方案中，包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。

Vulcanization thing in sulphur natural gas, take off to exclude, Make organic sulfur content and the vulcanization hydrogen of the natural gas of raw material accord with relevant technical index requirement , satisfy production needs,Today of the chemical swift development of natural gas the desulphurization method of natural gas also emerge endlessly , In traditional a ethanol amine the foundation of wet desulphurization and the dry law desulphurization of zinc oxide on, have arisen the desulphurization of normal temperature of ferric oxide, the dry law desulphurization of activated carbon and member sift desulphurization, DDS biochemical wet desulphurization wait for new technology .

硫的存在造成合成氨工艺中催化剂中毒，因此需将含硫天然气中的硫化氢、有机硫等硫化物脱除，使产品天然气的硫化氢和有机硫含量符合有关技术指标要求，满足生产需要。在天然气化工迅猛发展的今天，天然气脱硫方法也层出不穷。在传统一已醇胺湿法脱硫，氧化锌干法脱硫的基础上，出现了常温氧化铁脱硫，活性炭干法脱硫，分子筛脱硫，DDS生化湿法脱硫等新技术。

The educt is boricacid on the surface of the composite, it is believed that oxide reaction takes placeduring the sintering of 〓-BN composite, and part of oxide outgrowth -〓has been left in the sintering body.

通过分析〓-BN复相导电陶瓷表面析出物及〓粉和BN粉的氧化产物，揭示〓-BN复相导电陶瓷中残留的氧化产物——氧化硼是〓-BN复相导电陶瓷引起潮解的主要原因。

The bioactive screening on aldose reductase, nitric oxide synthetase, liver cancer Bel-7402, cavum oris epithelioma KB and colon cancer HCT-8 showed that paeoniflorin inhibited the nitric oxide synthetase by the rate of 83. 4% at the concentration of 5μg/ml, and paeoniflorigenone inhibited the colon cancer HCT-8 cells by the rate of 83. 2% at the concentration of 5μg/ml.

通过醛糖还原酶、NO合酶、肝癌Bel-7402、口腔上皮癌KB以及结肠癌HCT-8五种模型的生物活性筛选表明，在51μg／ml的浓度下，芍药甙对NO合酶的抑制率达83.4％，芍药甙元对结肠癌HCT-8细胞株的抑制率达83.2％，有较好的抑制作用。

The main work can be summed up as follows: Firstly, we studied the thermal-field properties of VCSELs, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. Secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of VCSELs, and then studied the influences of the oxide-confining region with different position or thickness, and the different sizes of the gain-guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. Thirdly, we realized the coupling of electricity, optical and thermal-fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, Fermi levels and optical-field. Finally, we gave the equipotential line distributions with considering N-DBR and double oxidized-confining regions, and analyzed theinfluences of N-DBR and double oxide-confining regions on the distributions of the current density, carrier concentration, temperature and optical-field.

具体工作可以概括如下：首先，研究了VCSEL的热场特性，分析了电流扩展，材料参数和工作条件对于温度分布的影响；其次，从电极电压入手，计算出激光器中的等势线分布，并对不同深度处的电压和电流分布进行比较，研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响；再次，实现了电、光、热耦合，求出了阈值电压，计算了不同偏置电压下的电流密度分布、载流子浓度分布和热场分布，分析了温度和载流子浓度变化对折射率、费米能级和光场的影响；最后，给出了考虑N-DBR和双氧化限制层时激光器中的等势线分布，分析了N-DBR和双氧化限制层对VCSEL电流密度、载流子浓度、温度和光场分布的影响。

Neither the killing of Mr Zarqawi nor any breakthrough on the political front will stop the insurgency and the fratricidal murders in their tracks.

在对危险的南部地区访问时，他斥责什叶派民兵领导人对中央集权的挑衅行为。

In fact,I've got him on the satellite mobile right now.

实际上 我们已接通卫星可视电话了