查询词典 oxide

Methods: We divide the rats into 5 groups in random, with Morris method, detect the change of some active oxygen radicals such as super-oxide demitasse, Nitric Oxide Synthase, malondialdehyde etc. Also, we detect the change of cholinesterase, Monoamine Oxidize; using HE,PAS staining, immuno-histochemical technique, detect hippocampus CA1 cerebral pathology slices optical density value of NOS, CHE and lipofuscin of neural cell; detecting apoptosis rate and the expression of P53 , which are neuronal apoptosis related genes.

大鼠随机分为5组，采用"Morris水迷宫"法观察脑缺血性模型大鼠学习记忆功能，检测超氧化物歧化酶、一氧化氮合酶、丙二醛等自由基代谢异常的改变，检测胆碱酯酶、单胺氧化酶等老化相关酶的变化、脑组织神经细胞免疫组织化学技术、检查海马CA1区脑组织的病理切片，检测NOS、CHE光密度值；流式细胞技术：检测细胞凋亡率，及促细胞凋亡基因、P_(53)蛋白表达；病理切片采用HE染色、PAS染色及免疫组化法检查，检测对大鼠海马神经元细胞一般病理变化及脑细胞内脂褐含量。

Thermal oxidation treatment can increase the surface hardness and elastic modulus significantly and reduce the E /H ratio of the TC4, which indicate the treatment can enhance the wear resistance of TC4 alloy. Long time treatment can increase the thickness of the oxide layer, but the outside layer is apt to desquamate during the scratching. The oxide layer closing to substrate has better bonding properties, but microcrack forms as a result of high stress loading, which lead the layer to flake off completely.

长时间的高温氧化可以增加氧化层的厚度，但在划擦过程中氧化层发生两次脱落，表明氧化层由外表层和次外层组成，外层结合力差，易发生一次脆性剥落，内层与基体的结合强度较高，但在较大载荷作用下会产生微裂纹，导致氧化层的二次剥落。

And the emission band at 420 nm should be contributed to intrinsic diamagnetic defect in the amorphous oxide layer, while the damaged oxide layer could contribute to the bands around 420 nm.

通过真空退火之后发现470nm的谱峰明显变强了，这一实验结果证实了此峰是由纳米硅线表面氧化层的氧缺失缺陷引起的说法。

The stress dependent character of oxide trap has been a problem in the study of oxide degradation. Using the Proportional Differential Operator method, we extract the trap parameters, and study their stress dependent characteristic change.

新生陷阱的应力相关特性是氧化层退化研究的基础工作，本文利用比例差分的方法提取了陷阱参数，并研究了陷阱参数的应力相关特性。

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In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

在一些实施方案中，渐变半导体缓冲层位于隐埋氧化物层下面，而在其他实施方案中，包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。

Vulcanization thing in sulphur natural gas, take off to exclude, Make organic sulfur content and the vulcanization hydrogen of the natural gas of raw material accord with relevant technical index requirement , satisfy production needs,Today of the chemical swift development of natural gas the desulphurization method of natural gas also emerge endlessly , In traditional a ethanol amine the foundation of wet desulphurization and the dry law desulphurization of zinc oxide on, have arisen the desulphurization of normal temperature of ferric oxide, the dry law desulphurization of activated carbon and member sift desulphurization, DDS biochemical wet desulphurization wait for new technology .

硫的存在造成合成氨工艺中催化剂中毒，因此需将含硫天然气中的硫化氢、有机硫等硫化物脱除，使产品天然气的硫化氢和有机硫含量符合有关技术指标要求，满足生产需要。在天然气化工迅猛发展的今天，天然气脱硫方法也层出不穷。在传统一已醇胺湿法脱硫，氧化锌干法脱硫的基础上，出现了常温氧化铁脱硫，活性炭干法脱硫，分子筛脱硫，DDS生化湿法脱硫等新技术。

The educt is boricacid on the surface of the composite, it is believed that oxide reaction takes placeduring the sintering of 〓-BN composite, and part of oxide outgrowth -〓has been left in the sintering body.

通过分析〓-BN复相导电陶瓷表面析出物及〓粉和BN粉的氧化产物，揭示〓-BN复相导电陶瓷中残留的氧化产物——氧化硼是〓-BN复相导电陶瓷引起潮解的主要原因。

The bioactive screening on aldose reductase, nitric oxide synthetase, liver cancer Bel-7402, cavum oris epithelioma KB and colon cancer HCT-8 showed that paeoniflorin inhibited the nitric oxide synthetase by the rate of 83. 4% at the concentration of 5μg/ml, and paeoniflorigenone inhibited the colon cancer HCT-8 cells by the rate of 83. 2% at the concentration of 5μg/ml.

通过醛糖还原酶、NO合酶、肝癌Bel-7402、口腔上皮癌KB以及结肠癌HCT-8五种模型的生物活性筛选表明，在51μg／ml的浓度下，芍药甙对NO合酶的抑制率达83.4％，芍药甙元对结肠癌HCT-8细胞株的抑制率达83.2％，有较好的抑制作用。

The main work can be summed up as follows: Firstly, we studied the thermal-field properties of VCSELs, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. Secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of VCSELs, and then studied the influences of the oxide-confining region with different position or thickness, and the different sizes of the gain-guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. Thirdly, we realized the coupling of electricity, optical and thermal-fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, Fermi levels and optical-field. Finally, we gave the equipotential line distributions with considering N-DBR and double oxidized-confining regions, and analyzed theinfluences of N-DBR and double oxide-confining regions on the distributions of the current density, carrier concentration, temperature and optical-field.

具体工作可以概括如下：首先，研究了VCSEL的热场特性，分析了电流扩展，材料参数和工作条件对于温度分布的影响；其次，从电极电压入手，计算出激光器中的等势线分布，并对不同深度处的电压和电流分布进行比较，研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响；再次，实现了电、光、热耦合，求出了阈值电压，计算了不同偏置电压下的电流密度分布、载流子浓度分布和热场分布，分析了温度和载流子浓度变化对折射率、费米能级和光场的影响；最后，给出了考虑N-DBR和双氧化限制层时激光器中的等势线分布，分析了N-DBR和双氧化限制层对VCSEL电流密度、载流子浓度、温度和光场分布的影响。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。