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ML6XX16 is a high power AlGaAs semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 785nm and standard light output of 30mW.

ML6XX16是一种高功率AlGaAs半导体激光器提供了一个稳定的，单一的排放标准的785nm和30mW的光输出波长横模振荡。

According to the process of the mutual reaction of the population number at each energy level of the un-equilibrium mixed gases flowing in flow laser and the intensive emission reaching the stable oscillation, and the numerical simulated calculation results of the corresponding 3-dimensional distribution states, the simplified calculation formulae of the basic properties of the corresponding oscillator and amplifier are developed.

根据流动激光腔中流动的非平衡混合气体各能态布居数和强辐射相互作用达到稳定振荡的过程和相应的三维分布状态的数值模拟计算结果，发展了相应的振荡器和放大器基本特性的简化计算公式。

Also it is found that when the reflectivities of two antireflection and high-reflection coatings increase, and the stable oscillation of the master wave is established in the external cavity, the threshold current is the lowest, but the efficiency of the electro-optical conversion and the power of the output light reduce sharply.

并且发现当两端面的反射率增加，同时激射波长在外腔长度中形成稳定谐振时，激光器的阈值电流达到最小值，但相应的电光转换效率和出光功率会急剧地减小。

The largest rangeof stable oscillation is obtained from a symmetric plane-plane resonation, in which thedistance between two rods is twice as the mirror-rod distance.

通过二棒串接和三棒串接的实验验证了理论分析的结果，激光器在较宽的范围内稳定工作，双棒串接的激光器最大输出功率为 840W，三棒串接的激光器最大输出功率为 970W。

When the modified system collapses to a stable equilibrium or periodic oscillation, the existence of generalized synchronization can be converted to the problem of compression fixed point under certain conditions. Strict theoretical proofs are given to the exponential attractive property of generalized synchronization manifold.

即在响应系统的修正方程在具有渐近稳定平衡点或渐近稳定周期轨道的情况下，满足一定的条件，可将广义同步化流形存在性问题转化为Lipschitz函数族的压缩不动点问题，理论上严格证明了该广义同步化流形的指数吸引性。

Those ions will perform stable oscillation nearby the beam orbit while their mass is larger than a critical mass. The accumulation of trapped ions nearby the beam orbit, interacting with beam, can cause the tune shift of beam, blowup of beam emittance, increase of local vacuum pressure, and can even lead to the occurrence of beam instability.

这些被俘获的离子在束流轨道附近的积累并和束流的相互作用，会引起束流振荡频率的漂移和展宽、束流发射度的增加、局部真空度的恶化等各种负效应，有时甚至会导致束流不稳定的发生，从而影响储存环的正常工作，在这种情况下采用离子清洗方法将离子清洗掉对保证储存环的长期、稳定的运行是必要的。

Based on the analysis of current oscillation region of stable electric fielddomains in I-V curve,it is shown that when the applied bias voltage is changedwithin positive slope regions of I-V curve,the domain boundary between the high-and low-electric field domains does not moved,and the size of electic fielddomains regions is also not altered,while the electric filed strengths are adjusted tokeep the current conservation.

通过对稳态电场畴情况下I-V曲线中电流振荡区域的分析，证明当外加偏压在正微分电导区变动时，超晶格的高低电场畴之间的畴边界不发生移动，畴的大小不变，只是相应的电场强度做些调整以使电流守恒成立。

Based on these design guides, the analysis and design of a low phase noise and low power dissipation, with 0. 18μm CMOS process, integrated Colpitts crystal oscillator with automatic gain controlled feedback loop as the amplitude-limiting technique, low dropout voltage regulation with band gap reference voltage and frequency tuning monotonicity guaranteed by digitally controlled variable capacitor array is performed to revise influence caused by process, voltage and temperature conditions for. handset. The oscillation with very stable amplitude value and frequency value is achieved.

它利用对工作温度、电源电压和制造工艺不敏感的带隙基准源和在集成电路中元件特性之间匹配好的优点产生了一个不随温度、电源和工艺改变而且可以跟踪工艺变化的参考基准电压，同时通过自动频率控制环路利用数字电路控制可变电容阵列控制瞬态频率稳定度，校正温度、电源和工艺改变对频率的影响，从而可以在很宽的电源电压范围(2.7v—3.7v)和温度范围(-40℃—125℃)以及CMOS工艺参数变化(TT、FF、SS、SF、FS)的条件下提供幅度稳定、频率稳定的振荡输出信号。

A simple model was developed to investigate the generation mechanism of virtual cathode oscillation microwave based on space-charge effect under small signal condition.

采用小信号理论，在考虑到透射、反射束电子不同作用下，分析了虚阴极振荡器产生微波的机制，获得了计算微波主频的方法，讨论了增强束波作用效率的方法，并提出一种新型结构的虚阴极振荡器。

For thinner films, stacking faults are preferred in the scratch process, which increase storage capacity of plastic deformation in the film, and further inhibit the stick slip amplitude in the friction oscillation process. For thicker films, dislocation loops, which glide along slip plane downward to the grain boundary, dominate over the stacking faults, and finally dissipate on the grain boundaries. Since the intergrain stacking faults are inactive in thicker films, the stick slip phenomenon is similar to that in single crystal.

摩擦过程中易在较薄的薄膜表面和薄膜晶界之间产生穿晶层错，穿晶层错的产生增加了薄膜蓄积塑性变形的能力，从而抑制材料表面摩擦力在黏滑过程中的振荡幅度；在比较厚的薄膜中不易生成穿晶层错，在摩擦过程中位错环依次向体材料发射，并与晶界反应，湮灭于晶界，黏滑动摩擦响应与单晶相似。

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我尽力帮你找人帮忙。

At first I only know bruck is the idol of American younglings, afterwards I returned back to Taiwan ,even in Beijing last year ,I saw her poster everywhere, I was so surprised at her charm.

起初我只晓得布鲁克雷德丝是美国少男少女崇拜的偶像，后来回台湾，甚至去年在北京，居然也四处看见她的海报，才惊讶她的魅力之大。