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nitride相关的网络例句

查询词典 nitride

与 nitride 相关的网络例句 [注:此内容来源于网络,仅供参考]

A method for the preparation of silicon nitride powder by a direct nitridation process based on fluidization technology is described.

提出了一种基于流态化技术,利用硅粉直接氮化制备氮化硅粉的新工艺。

Most of the white LEDs now on the market are based on gallium nitride.

目前市面上多数的白色发光二极管都是基于氮化镓的。

Gallium nitride is an excellent chemical semiconductor material and also is one of the most advanced semiconductors in the world.

GaN是一种十分优异的宽带隙Ш一V族化合物半导体材料,是当前世界上最先进的半导体材料之一。

A gallium nitride LED on sapphire has a typical internal quantum efficiency of around 70%.

基于蓝宝石的氮化镓发光二极管的一般内量子效率约为70%。

Yet even at this early stage he thinks gallium nitride-on-silicon LEDs would make commercial sense.

即便是在这个初始阶段他认为他们的 LED灯泡会有其商业意义。

Gallium nitride is a man-made semiconductor that has proved too expensive for widespread production because of low yields.

氮化镓是一种人为的半导体,已经证明了对广泛的生产太昂贵了,因为产量低。

Hydrogenated amorphous silicon nitride films have been deposited by helicon wave plasma enhanced chemical vapor deposition, the effect of SiH4/N2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a-SiNx:H films with different compositions are deposited.

本工作采用螺旋波等离子体化学气相沉积方法制备了氢化非晶氮化硅薄膜,系统地研究了不同反应气体配比对薄膜特性的影响,得到了沉积不同组分a-SiN_x:H的典型实验条件。

Silicon nitride passivation layer existed in standard CMOS process is used as hydrogenous ions sensitive layer, ISFET with multi-layer floating electrode structure works as the sensing unit.

介绍了一种基于上华0.6μmCMOS工艺实现的pH值传感器集成电路的设计和研究,它采用标准CMOS工艺提供的Si3N4钝化层作为氢离子敏感层,并以多层浮栅结构的ISFET作为传感单元。

And when using benzene as solvent, amorphous phosphorus nitride imide were obtained, which were consisted of microtubes, hollow balls, solid balls and square frameworks. Through adjusting reaction time and temperature, the morphology of the samples was well controlled.

进一步引入苯作为反应的溶剂,在高压反应釜中在190-250℃反应得到了由微管、空心球、实心球和四方框组成的非晶HPN〓,并通过调节反应时间和温度使产物的形貌得到了很好的控制。

This is because of the impurity nitride in glass.

本文认为这是玻璃内部所含的杂质氮化物所致。

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