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nitride process相关的网络例句

查询词典 nitride process

与 nitride process 相关的网络例句 [注:此内容来源于网络,仅供参考]

According to the building blocks concept dicyandiamide N≡C-NH-C (NH〓=NH was selected as the precursor to improve the nitrogen content in the electrodeposited carbon nitride films.

以丙酮为分散介质,在阳极电沉积过程中制备得N含量为48%的氮化碳薄膜,此膜中有一定量的C=N和C≡N键,热退火使得C≡N减弱,C-N增强。

In our model, the nitride traps have a continuous energy distribution.

在吾人的模型中,假设氮化矽中缺陷为连续性的分布。

Carbon nitride powder with C-N bond was prepared. High pressure and temperature were supplied by Cyclonite and dicyandiamide(C2H4N4) was used as the primary precursor in this article.

利用黑索今炸药作为高温、高压源,双氰胺(C2H4N4)作为主要前驱体,采用爆炸冲击合成的方法制备了含C-N的氮化碳粉末。

Surface group of silicon nitride powder is one of the critical factors determining its aqueous dispersibility.

首次提出,粉料颗粒表面的基团是氮化硅粉料分散性能的决定性因素之一。

The effects of surface characteristics of silicon nitride powder on its aqueous dispersibility and the key issues for preparation of concentrated suspensions were investigated thoroughly.

详细研究和探讨了氮化硅粉料的表面特性对水中分散特性的影响及其水基浓悬浮体制备的问题。

Keywords: rare-earth doped material; wide-gap semiconductor; III-nitride; laser radiation; plasma

中文关键词:稀土掺杂材料;宽能隙半导体;III族氮化物;激光辐射;等离子体

The effects of different nitriles on the electrodeposition of carbon nitride films were studied.

还研究了不同腈类和脉冲电源对沉积结果的影响。

This thesis described the etching characteristics of silicon nitride passivation films in the thin-film transistor structure using an enhanced capacitive-coupled high-density plasma etcher. The main parameters used in these experiments were RF source power, RF bias power, chamber pressure, SF6, O2 and He gas flow rates.

中文摘要本研究以加强型电容耦合式高密度电浆蚀刻机台来研究蚀刻氮化矽结构,实验操作参数为射频电浆源功率、射频偏压源功率、SF6、O2、He气体流量和腔体压力。

In this thesis, the low-temperature (25℃-250℃) sputtered aluminum nitride film was deposited as the gate insulator in organic thin film transistors.

本论文中,低温(25℃-250℃)溅镀氮化铝薄膜被沉积当作有机薄膜电晶体上的闸极绝缘层。

The motive of this paper is to investigate the relationship between deposition parameters and its properties in order to prepare excellent silicon nitride silicon thin film for gate insulator of TFT.

本实验通过系统地改变沉积参数,在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。

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听,指出并且检查你的答案。

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