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nitridation相关的网络例句

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In aluminothermic reduction and nitridation, the reaction speed increases with the temperature, the optimum temperature is 1460℃.

严格控制反应条件,产物的氮含量可达到22.0wt%(对于z=3的β'-Sialon,氮的理论含量为24.7wt%,此转化率在有关天然原料合成β'-Sialon粉体的报道中目前是最高值。

Sialon powders have been synthesized by carbonthermic and aluminothermic reduction and nitridation from natural Kaolin. The cost is 2030 times lower than that forming pure β′-Sialon from artificial materials.

首次以天然高岭土为原料,通过碳热还原氮化和铝热还原氮化两种途径制备β'-Sialon粉体,它比用合成原料制备的纯β'-Sialon成本下降20-30倍。

However, for the surface nitrided with the closed N2 cell shutter, after nitridation process at 500℃, the(3 × 3) RHEED pattern was observed and the surface still kept atomically flat.

但是,在关闭N2发生器挡板的情况下,在500℃下,经过氮化将观察到(3×3)再构的RHEED花样,表面仍保持原子级的平整度。

The columniform samples are made with the pressure of 150?MPa that contain graphite,Al 2O 3,SiO 2 and MgO powder.With samples heated at 1?420?℃,1?500?℃ and 1?600?℃ for 4 hours,MgAlON and 21R-AlN Sialon are synthesized by carbothermal reduction nitridation in the sample,MgAlON and 21R-AlN Sialon occure at 1?420?℃.With tempreture rising to 1?600?℃,MgAlON and 21R-AlN Sialon are increasing.

与高温氧化物相比,碳由于熔点高,热膨胀系数小,导热性好,热稳定性和化学稳定性好,不易被液态金属和熔渣润湿等特点,而成为优质耐火原料,使耐火材料在抗熔渣侵蚀和抗热震等性能方面得到质的飞跃。

In this thesis, we try to use post-deposition N2O plasma nitridation to improve the HfO2 film quality.

本论文中,我们尝试使用一氧化二氮电浆氮化处理,以改善二氧化铪闸极介电层的品质。

In this paper the influences of plasma nitridation of SiO_2 films on the electron traps in the films are discussed.

论述了等离子体氮化对SiO_2薄膜中电子陷阱的影响。

The effect of NH4Cl /KCl as the additives on the nitridation of aluminium powders was investigated.

研究了 NH4Cl /KCl添加剂对铝粉氮化反应的影响。

If the annealing is chosen suitably, the influence of nitridation of SiO_2 on electron traps can be reduced.

适当地退火可以减少等离子体氮化对SiO_2中电子陷阱的影响。

The effect of the size of alumionphosphate precursor, ammonia flow and nitridation temperature on preparation of AlPON were investigated.

考察了磷酸铝颗粒度、氨流量和氮化温度对氮化磷酸铝制备的影响。

They are the easy nitridation of Si surface and the poor wetting properties of GaN on Si substrate.

采用低温生长GaN缓冲层,随后进行高温GaN生长的&两步生长法&,对Si上GaN的生长进行了深入系统的研究。

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