查询词典 nitric oxide

A method of production of a reduction resistant dielectric ceramic composition having a superior low frequency dielectric characteristic and further improved in accelerated lifetime of insulation resistance, specifically a method of production of a dielectric ceramic composition containing a main component including a dielectric oxide of a specific composition, a first subcomponent including a V oxide, a second subcomponent containing an Al oxide, a third subcomponent containing an Mn oxide, and a fourth subcomponent containing a specific sintering aid in a specific ratio, including a step of mixing at least part of the materials of the subcomponents excluding one or both of at least the material of the third subcomponent and material of the fourth subcomponent with the starting materials prepared for obtaining the material of the main component to prepare the pre-reaction material, a step of causing the prepared pre-reaction material to react to obtain a reacted material, and a step of mixing the materials of the subcomponents excluded when preparing the pre-reaction material with the obtained reacted material to obtain a dielectric ceramic composition.

本发明提供一种介电陶瓷组合物的制造方法，其中介电陶瓷组合物以特定的比例含有如下成分：含有特定组成的介电体氧化物的主成分，该主成分可以提供具有优异的低频率介电特性的、绝缘电阻的加速寿命进一步提高的耐还原性介电陶瓷组合物的制造方法，含有V氧化物的第1副成分，含有Al氧化物的第2副成分，含有Mn氧化物的第3副成分，以及含有特定的烧结助剂的第4副成分；该方法包含如下工序：将至少除去第3副成分的原料和第4副成分的原料的一种或两种的其它副成分原料的至少一部分，与为了得到主成分原料而准备的起始原料混合，准备反应前原料的工序；使准备的反应前原料反应而得到反应后原料的工序；以及在所得的反应后原料中，混合在准备反应前原料时除去的副成分原料，得到介电陶瓷组合物原料的工序。

In the present study, tungsten oxide nanomaterials were synthesized by a modified plasma arc gas condensation technique. The effects of the plasma currents (70~90 A), chamber pressures (200~600 torr), production time（3~12 min）, oxygen partial pressure Ar:O2（1~6:1）and plasma including the hydrogen（0~10 %）on the preparation of tungsten oxide nanostructures were investigated. Pre-treatment on the tungsten oxide nanorods for surface modification was investigated by atmospherical plasma jet. The optical, filed emission, and gas sensing characteristics of tungsten oxide nanopowders were also examined.

本研究系利用电浆电弧气凝合成法来制备氧化钨奈米材料，分别探讨不同腔体压力（200~600 torr）、电浆电流（70~90 A）、制备时间（3~12 min）、氧分压Ar：O2（1~6：1）、电浆气含氢量（0~10 %）对於产物的形貌、相态影响，并使用常压低温电浆设备对氧化钨奈米棒进行表面处理，且针对氧化钨奈米材料的光学、场发射以及使用自行组装气体感测量测设备量测其气体感测特性。

This invention provides a method for preparing hydrogenation catalyst containing phosphorus supported by aluminum oxide. The catalyst is composed of nickel oxide 1-10 wt.%, molybdena oxide and tungsten oxide 10-50 wt.

以氧化铝为载体的含磷加氢催化剂及其制备，该催化剂焙烧后的组成为氧化镍1-10重量％，氧化钼和氧化钨之和大于10至50重量％，氧化磷1-9重量％，余量为氧化铝，其中，以氧化物计，钨和钼的摩尔比大于2.6至30。

The results indicate that only tungsten oxide grains are formed without sodium sulfate additions, while tungsten oxide whiskers with 0.20.3 μm in diameter and aspect ratio of 5-50 or tungsten oxide nanowires with 1030 nm in diameter and aspect ratio of 50200 are synthesized by some sodium sulfate additions on conditions at 180 ℃ for 1236 h. The phase composition of tungsten oxide whiskers is hexagonal tungsten trioxide. The whiskers/nanowires grow oriently through 〈200〉,〈002〉,〈202〉and〈100〉.

结果表明：未添加硫酸钠时，在180 ℃水热反应12~36 h只能得到氧化钨颗粒粉末，而添加适量硫化钠后，可制备出直径为0.2~0.3 μm、长径比为5~50的氧化钨晶须和直径为10~30 nm、长径比为50~200的氧化钨纳米线；氧化钨纳米线晶体结构良好，物相为六方晶系WO3；微/纳米氧化钨晶须/线主要沿〈200〉，〈002〉，〈202〉和〈100〉方向定向生长。

A semiconductor device including a high voltage element and a low voltage element, including: a semiconductor substrate having high voltage element region where the high voltage element is formed, and a low voltage element region where the low voltage element is formed; a first LOCOS isolation structure disposed in the high voltage element region; and a second LOCOS isolation structure disposed in the low voltage element region, wherein the first LOCOS isolation structure includes a LOCOS oxide film formed on a surface of the semiconductor substrate and a CVD oxide film formed on the LOCOS oxide film, and the second LOCOS isolation structure includes a LOCOS oxide film.

提供一种在确保高耐压元件的高耐压特性的同时使高耐压元件和低耐压元件具有良好特性的半导体装置。具有高耐压元件和低耐压元件的半导体装置包含：规定了形成高耐压元件的高耐压元件区和形成低耐压元件的低耐压元件区的半导体衬底；在该高耐压元件区设置的第一LOCOS隔离结构；以及在该低耐压元件区设置的第二LOCOS隔离结构。第一LOCOS隔离结构由在该半导体衬底的表面上形成的LOCOS氧化膜和其上形成的CVD氧化膜构成，第二LOCOS隔离结构由LOCOS氧化膜构成。

Keywords Palladium;Titanium oxide;Barium oxide;Aluminum oxide;Nitrogen oxide;Storage-reduction catalyst;Sulfur resistance;Lean burn engine emission

钯； 氧化钛；氧化钡；氧化铝；氮氧化物；储存-还原催化剂；抗硫性能；贫燃发动机尾气

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

Rail company's existing six red, four iron yellow, two black iron, an iron green, a total of 13 iron oxide pigment production line, under the holding company of Hangzhou Huayuan Germany, race, equity participation, companies such as Toda sambong an annual output of iron oxide paint 110,000 tons, including blending, roasting, ultra-fine deep processing production lines, annual output reached 10000 tons, the product varieties have iron oxide red, iron yellow, iron oxide black, iron orange, iron brown, green and ultra-fine iron, calcination deep-processing products, such as more than 50, more than 90% of export products, customers across five continents over 40 countries and regions.

公司现有六条铁红、四条铁黄、二条铁黑、一条铁绿，共十三条氧化铁颜料生产线，下属控股公司华源杭德、赛诺康、参股公司户田三峰等，年产氧化铁颜料11万吨，其中拼混、焙烧、超细深加工产品生产线，年产量达 10000余吨，产品品种有氧化铁红、铁黄、铁黑、铁橙、铁棕、铁绿以及超细、焙烧等深加工系列产品五十多个，产品90%以上外销，客户遍及五大洲四十多个国家和地区。

I plant perennial supply of chemical plating material: nickel sulphate, chloride nickel, nickel nitrate, ammonium chloride, sodium hypophosphite, sodium citrate, ammonium citrate, potassium citrate, chromium oxide, red Lead oxide, palladium chloride, SnCl2, crystal tin tetrachloride, the resistance of fuse, lithium fluoride, sulfuric acid cadmium, Na2HPO4, bismuth chloride, bismuth oxide, oxide Thallium sulfate Cobalt, cobalt nitrate, cobalt chloride, barium hydroxide, calcium hydroxide, fine chemical products.

我厂常年供应化学镀材料：硫酸镍、氯化镍、硝酸镍、氯化铵、次亚磷酸钠、柠檬酸三钠、柠檬酸三铵、柠檬酸钾、三氧化铬、红色氧化铅、氯化钯、氯化亚锡、结晶四氯化锡、电阻熔断剂、氟化锂、硫酸镉、磷酸氢二钠、氯化铋、三氧化二铋、三氧化二铊、硫酸钴、硝酸钴、氯化钴、氢氧化钡、氢氧化钙等精细化工产品。

The results indicate that the spalling behavior of oxide scale is the result of the inner and outer stress together,during rolling,the oxide scale cracks under the growth stress and thermal stress,at the same time the oxide scale also mainly undergoes alternative shearing stress in the rolling zone,the oxide scale spalls,then the reason of stripspalling is also analyzed.

结果表明：氧化膜剥落过程是内外应力联合作用的结果，轧制过程中氧化膜在长大应力和热应力作用下开裂，在轧制区内氧化膜还因受沿轧辊圆周方向的交变剪切应力作用而剥落。

Listen,point and check your answers.

听，指出并且检查你的答案。

Warming needle is one of effective treatment methods for knee arthralgia aggravated by cold,and it is simple,safety,so it should be developed in clinical acupuncture and moxibustion extensively.

但以本院科针灸门诊在2005年1月—2006年6月期间共收治膝痛患者100余例，经过临床的诊断后，其中施以温针治疗的48例，疗效显著，报道如下。1临床资料本组病例48