查询词典 neutron flux

The collimator neutron flux is drawn from the horizontal channel by the use of SPRR-300 as a neutron resource. The convector made of 6LiFZnS and the long focus professional twilight lens with the small field of view are used, and the digitalized CCD camera is developed by the use of scientific grade CCD chip, the double thermocouple refrigeration and 14bit A/D convector. The image grabbing, processing and analyzing software of double bytes has been developed by the use of Visual C++ and C++ Builder, and the facility of anti-radiation for CCD is set up.

采用6LiFZnS材料中子转换屏、长焦距、小视场专用微光镜头等光学组件，利用科学级CCD芯片、两级热电偶制冷技术、14bit模数转换技术研制了数字CCD摄像机，采用Visula C++和C++ Builder为工具，开发了双字节图像采集处理分析软件包，并设计了成像系统辐射防护装置，构成了热中子数字成像系统。

The performance of the CNGs, including transmission efficiency, neutron flux, flux spectrum, divergency, uniform and gravity effect, have been analysed technically.

在满足导管出口中子束的均匀化效果前提下，模拟计算出弯导管后的直导管的最佳长度。

The design of the project design of the pulse neutron flux indicators over the world are running all the spallation neutron source.

项目设计中的脉冲中子通量设计指标，已经超过目前世界正在运行的所有散裂中子源。

Activation detection is used to measure the neutron yield from a DPF neutron source with narrow pulse width and high neutron flux.

活化测量是等离子体焦点中子源的窄脉冲、高注量率中子辐射产额的有效测量方法。

This paper discussed the methods and the factors to design a system to measure neutron flux density ,and introduced the new measuring system used in mini-neutron-source-reactor built in Shenzhen University,that was reformed to dual control bars system just two years ago.

介绍了对中子注量率密度的一般检测方法及要点并介绍了双棒联动改造后深圳大学商用微型研究堆控制系统中的中子注量率密度检测系统，叙述了在设计方面的考虑，给出了具体的电路原理图及其参数。

The neutron flux densities at various positions in neutron beam equipment are measured by SSNTD method.

利用固体径迹探测器测量了束流装置中心轴线上不同位置处的中子通量密度。

Based on MCNP, authors developed the software package of the Monte Carlo method to simulate the neutron flux distributions with the space, energy and time for neutron logging.

作者在 MCNP的基础上，开发了中子测井，中子通量随空间、能量、时间分布蒙特卡罗模拟软件包。

The preparation of 235 U targets and the recoil catcher assembly,determination of neutron flux by Au flux monitor,radiochemical separation and detection of 136 Cs and 137 Cs are studied.

主要研究内容包括：235U靶的制备；反冲捕集装置的设计加工；用Au作为中子监测器监测135Cs活化时的中子注量率；137Cs和136Cs的放化分离和测量。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The neutron flux distributions are calculated from the 3D diffosion equations of two energy groups and six delayed neutron precursors by separaing the "time" and "space" variables.

堆芯中子通量分布采用分离变量法对两群六缓发中子组三维扩散方程来实时求解，并考虑慢化剂密度、硼浓度、氙和钐中毒、控制棒位置、燃料和慢化剂温度、燃料燃耗等因素对中子通量分布的影响。

The absorption and distribution of chromium were studied in ryeusing nutrient culture technique and pot experiment.

采用不同浓度K2CrO4(0，0.4，0.8和1.2 mmol/L)的Hoagland营养液处理黑麦幼苗，测定铬在黑麦体内的亚细胞分布、铬化学形态及不同部位的积累。

By analyzing theory foundation of mathematical morphology in the digital image processing, researching morphology arithmetic of the binary Image, discussing two basic forms for the least structure element: dilation and erosion.

通过分析数学形态学在图像中的理论基础，研究二值图像的形态分析算法，探讨最小结构元素的两种基本形态：膨胀和腐蚀；分析了数学形态学复杂算法的基本原理，把数学形态学的部分并行处理理念引入到家实际应用中。