查询词典 minority carrier

The effect of minority carrier lifetime in the base on the current gain is given.

模拟结果显示Si／SiGe HBT具有优良的常温和低温电性能。

When the minority carrier life of PS decreases, the irradiative centers on surface of PS increase, which lead to decreasing of photoluminescence efficiency.

另外，原子力显微照片表明长时间的腐蚀使多孔硅表面层被化学腐蚀，从而降低了多孔硅表面的粗糙度。

With mathematical transformation and approximation, the differential equation of the minority carrier density in a textured cell takes the same form as the flat cell.

而对绒面结构太阳电池的内量子效率和物理参数关系的理论推导，通过数学变换和高阶近似后所得结果，可归结为与平带同质结相同的形式。

With mathematical transformation and approximation, the differential equation of the minority carrier density in a textured cell takes the same form as the fiat cell.

而对绒面结构太阳电池的内量子效率和物理参数关系的理论推导，通过数学变换和高阶近似后所得结果，可归结为与平带同质结相同的形式。

It can also be used to measure and calculate the minority carrier diffusion length of Ga As wafer.

这样的方法还适用于GaAs 薄片材料少子扩散长度的测量和计算。

Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region

少数载流子-在半导体材料中不起支配作用的移动电荷，在P 型中是电子，在N 型中是空穴。

Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons

少数载流子-在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。

Common lifetime measurement methods for minority carrier of crystalline silicon and crystalline silicon solar cells were introduced, including microwave photoconductivity decay, quasi-steady state photo-conductance, surface photoelectric voltage, infrared carrier density imaging, modulation free-carrier absorption and laser beam-induced current microscopy.

分别介绍了常用的测量晶体硅和晶体硅太阳电池少子寿命的各种方法，包括微波光电导衰减法，准稳态光电导方法，表面光电压，IR浓度载流子浓度成像，调制自由载流子吸收和光束诱导电流，并指出了各种方法的优点和不足。

Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon.

通过各种方法(例如向PN结注入少数载流子)扰动导带电子和价带空穴的平衡浓度，致使非平据少数载流于复合而产生光子。

By taking the effects of Ge fraction and strain on the energy band structure and effective masses into account, the analytical model of the effective densities of states of the conduction and valence bands are proposed, and the temperature and Ge fraction dependence of the effective densities of states are also studied. Following this, the temperature and Ge fraction dependence of intrinsic carrier concentration in strained SiGe layers are analytically calculated. Furthermore, carder freezeout effect and the minority carrier trapping effect of the shallow-level compensated imputities in strained SiGe layers at low temperatures are investigated.

其中，分析了应变SiGe层的临界厚度、能带结构、禁带宽度及禁带变窄模型；在考虑了Ge组份和应力对应变SiGe层能带结构的影响后，给出了较为精确的SiGe应变层的导带和价带有效状态密度的模型，并研究了有效状态密度与Ge组份及温度的变化关系；分析了应变SiGe层的本征载流子浓度及重掺杂下的禁带变窄；讨论了低温下应变SiGe层中的载流子冻析效应，并计算了SiGe应变层的电离杂质浓度与Ge组份及温度的关系；研究了应变SiGe层低温浅能级补偿杂质的陷阱效应；给出了应变SiGe层多数和少数载流子迁移率以及少数载流子寿命模型。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失