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Zinc oxide is an interesting wide band gap (3.3 eV) semiconductor material with a binding energy of 60 meV.

氧化锌是一种重要的宽禁带隙（3.3 eV）半导体材料，它的激子束缚能高达60 meV。

The calculated results show that H atom preoccupies the twofold bridge site of the subsurface on the intact W(100) surface at low coverage, and obtains the perpendicular vibration frequency of 156 meV. The H-atom adsorption on bridge site, top site and fivefold hollow site (the top site on the second W layer) were observed at high coverage.

计算结果表明，低覆盖度下， H原子优先吸附在W(100)面的内层吸附位二层桥位B'，获得156 meV的垂直振动频率，随着覆盖度的增加， H原子稳定吸附在表层的五重洞位、桥位及顶位。

Zn-diffused high power 650 nm AlGaInP/GaInP material with compressively strained multi-quantum-well active layer was fabricated. The zinc diffusion was used on the material facet in a sealed quartz tube. Photoluminescence spectra shows 175 meV blue-shift in the Zn diffusion area, which is transparent for 650 nm laser emission.

利用石英闭管法对金属有机化学气相沉积外延生长的应变量子阱650 nm AlGaInP/GaInP材料进行选择区域扩Zn，使扩Zn区域的光致发光谱的峰值蓝移达175 meV，形成对650 nm波长激光器的高透腔面，有益于减少激光器腔面光吸收，增加了激光器退化的光学灾变损伤阈值。

Oxygen ion beam of 6.0 MeV was selected as incident ion, and the ERD spectra were detected at the angle of 30°, then the cross-sections for O to D and T are Rutherford cross section under this experiment condition.

以6.0 MeV O粒子作为入射粒子，在30°方向上探测反冲粒子，在此实验条件下，O粒子对D、T的碰撞截面为卢瑟福截面。

The parameter of beam positions at HLS 200 MeV LINAC is very important to injection efficiency.A new strip-line beam position monitor system was designed recently,which is not interceptive to beam,qualified in precision and easy to digitalize the results.

合肥光源(Hefei Light Source，HLS)200 MeV直线加速器的束流横向位置是一个重要的运行参数，直接决定注入的效率，为此新开发了一种非拦截型、高精度、易于将测量结果数字化的条带电极束流位置测量系统(beam position monitor， BPM)，该系统由条带电极和信号处理系统组成。

A pulse rise time separation spectra of n and γ are obtained using Am-Be neutron slowed by paraffine upon 0.75 and 1 MeV.

在下阈0.75和1 MeV下，分别测量了Am-Be中子源的n-γ分辨谱以及相同条件下的γ上升时间－幅度谱。

The result indicates that the CeOs4Sb12 skutterudite is a Kondo insulator with a c-f interaction of 3.1 meV.

结果表明CeOs4Sb12中存在近藤相互作用，其作用强度为3.1 meV，证实了CeOs4Sb12为近藤绝缘体。

Several fragments containing the replication origin were cloned into replicon probe vector pUC-MEV constructed in this study. After screening a 4. 8kb PvuⅡ-SnaBⅠ fragment were determined to be the minimum replication region of the plasmid.

将包含复制起始原点在内的数个片段分别插入构建的嗜盐古生菌的复制子探针载体pUC-MEV中，通过筛选得到了pHH205最小复制功能片段。

For 0.5 MeV electron, the energy deposition distributions of pumping direction are almost uniform. In the lasing direction, because of a 14 cm unpumped area between two e beam windows the spatial profile of energy deposition takes the shape of a saddle.

对0.5 MeV的电子，泵浦方向能量沉积基本均匀，而在轴向，因为两窗口间的14 cm&死区&使得能量沉积呈&马鞍形&，峰谷比为2～3。

Materials and methods: The method of the electron grid therapy is to place a cerrobend grid on the end of an electron cone. Film dosimetry was used to measure the relative surface optical density and depth profile of grided electron beam with energies of 6 to 14 MeV.

材料与方法：使用底片测量术的方法，观察当15×15cm^2铅合金网眼板上的网眼孔径大小(d=0.45， 1.0， 1.5 cm)、网眼之间的间隔宽度(s=0.4， 0.2cm)不同时，以不同能量的电子射束(6、8、10、12、14 MeV)照射剂量50 M.U。，对底片的相对表面平均光密度及深度等光密度曲线分布情形所引起的变化。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。