查询词典 leakage current

The experimental results show that the validity of current collector is greater than 97% and the measurement error of the leakage current is less than 1%.

试验结果表明：采集环的采集效果大于97%；泄漏电流的测量误差小于1%。

It can be seen that besides the realization of the common-emitter gain, thus current amplification, the common-base properties were also improved due to the reduction of the common-base leakage current. We have attributed the improvement of the common-base properties and the realization of the common-emitter properties to the enhancement of the electron injection due to the utilization of the V2O5 interfacial layer.

研究发现，V2O5界面修饰层的引入明显地减小了共基极漏电流，使器件的共基极特性得到了进一步的改善，同时也使器件表现了共发射极特性，实现了电流的放大，我们已经把共基极特性的改善和共发射极特性的实现归功于界面修饰层的引入提高了电子注入的结果。

To continuously improve the MOSFET performance, both higher drive current and smaller leakage current are required.

为了不断地改善金氧半电晶体特性，提高电晶体的驱动电流及较小的漏电流是需要地。

It is found that the utilization of BAlq3/Alq3 isotype heterostructure emitter further reduces the leakage current, leading the BAlq3/Alq3 isotype heterostructure-based devices to higher output current and higher common-emitter gain at the same operational voltage compared to the case of Alq3 as the emitter.

研究发现，同Alq3单发射极层结构的金属基极晶体管相比，BAlq3/Alq3异质结发射极层的使用进一步降低了器件的漏电流，使器件在相同的电压下表现了更高的输出电流和更高的共发射极增益，为进一步实现高性能金属基极晶体管提供了新的方法。

The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-2 to 1.03×107cm-2, the Schottky barrier height decreased from 1.44eV to 1.19eV and the reverse bias leakage current at -1V is increased sharply from 10-10A to 10-7A . Further studies on a single V-defect using conductive atomic force microscope demonstrated that the value of forward current biased at 8V at V-defect side-walls appears to be one order higher than that of plain region, indicating that the conductivity mainly occurred at the side-walls of V-defect.

实验结果发现，随著V型缺陷密度由4.1×105cm-2增加至1.03×107cm-2，在氮化镓表面蒸镀镍金属所制成直径为100μm的萧基元件之所属能障从1.44eV下降至1.19eV，而且在-1V的操作下反向偏压漏电流从10-10A急遽的攀升至10-7A；为了了解V型缺陷对厘米尺寸n-GaN萧基元件电流传导机制之影响，我们进一步的利用导电原子力显微镜(Conductive Atomic Force Microscopy， C-AFM)，特别针对单一个V型缺陷进行微观电性之量测。

aining at high impedance weak signal measurement,the relations among measuring precision,input impedance and input bias current,the guard technology is applied to design a measuring circuit with guard circuit,adding a guard potential to low-impedance nodes of circuit,the effect of leakage current is reduced.using spice simulation and validates that guard circuit can increase the input impedance of the system and lower the input bias current,the results show that the guard circuit provids a valuable solution for high accuracy measurement of the high impedance weak signal.

摘 要：针对高阻抗微弱信号测量问题，对测量精度与系统输入阻抗、输入偏置电流的关系进行分析，应用保护技术设计了带保护电路的测量电路，将电路中的低阻抗节点加上保护电势，减小漏电流的影响。通过pspice仿真分析，验证保护电路能提高测量系统的输入阻抗和降低输入偏置电流，结果表明保护电路技术能实现对高阻抗微弱信号的高精度测量。

A switch leakage current of less than the work of the machine input current

a 漏电开关的工作电流小于机器的输入电流

Next, in chapter 3, we compare the current densities in inversion region and accumulation region of the RTO oxides with and without ANO-DAC. We found that the leakage current in inversion region is smaller with ANO-DAC compensated, but the current density lowering is slower with time past.

接著，在第三章我们对无阳极氧化与经过阳极氧化补偿后的氧化层做比较，比较在反转区与聚积区的电流密度，发现在阳极氧化补偿后反转区虽有比较小的漏电流，但随著时间经过，电流降低速度比较慢。

This variation is primarily a function of the cutoff leakage current of the CA3080A (a maxi- mum limit of 5nA), the leakage of the storage element, and other extraneous paths.

这种变化主要是截止泄漏的CA3080A（一5nA马克西，妈妈限制电流功能），存储单元的泄漏，以及其他无关的路径。

Two kinds of silicon samples with distinct surface treatment, i. e., one surface was chemically etched and the other was unetched, were used to investigate the characteristics of leakage current and surface flashover of semiconductor under impulse voltage in vacuum. The experimental results showed that the surface conditions of samples affected these characteristics greatly. Before flashover, the Ohmic current was observed for unetched samples and the space charge limited current for etched samples, respectively. Meanwhile both samples showed quite different flashover tracks, and the surface-etched samples displayed a much higher onset voltage of flashover.

对采用和未采用表面化学腐蚀处理的半导体硅在冲击电压下的实验表明（参见 Zhang et al ， Applied Physics Letters， 2002），试品的表面状况对其泄漏电流和沿面闪络特性有着很大的影响：在沿面闪络之前，未经处理试品的泄漏电流表现为 Ohm 性电流，而表面处理过的试品表现为空间电荷限制电流特性；同时两类试品表面的闪络通道也表现出不同的特征，而采用表面化学腐蚀处理可以明显提高其沿面闪络电压。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。