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The results of the test show that the whole intensity and comprehensive stability of subgrade made a good progress because the capillary water cant rise by using the insulating layer. In the prior condition of taking insulating layer thickness as 0.2m, choosing insulating layer 0.5m, 0.8m, below the pavement, the stability of seasonal frozen soil subgrade is analyzed. The results of the test also show that the optimal position of the insulating layer is 1.0m~1.5m .

试验表明,由于隔离层的作用使得毛细水无法迁移,对路基整体的强度和综合稳定性都有了很大程度上的提高,同时试验还表明在隔离层厚度为0.2m的前提下,设置在距路面以下1.0m~1.5m位置,即路基表面以下0.5m~0.8m处对路基的稳定性最为有利。

In the case of read-only CDs, the substrate lies directly next to the reflection layer. In the case of a CD-WO, an absorption layer existsbetween the substrate and the reflection layer. This layer can be irreversibly modified through strong thermal influence, which changes the reflection properties of the laser beams.

就只读CD来说,亚层应紧接在反射层之下,而CD-WO中,在亚层和反射层之间还有一个吸收层,这一层在强热的作用下做不可逆修改,因而改变了激光束的反射特点。

Results showed that the best antibacterial growth on Huaihai West Road was a tree layer of Zelkova schneideriana and Cedrus deodara, a shrub layer of Cercis chinensis and Buxus sinica, and a ground cover of Zephyranthes candida with an antibacterial effect of 51.9%. On Beijing North Road a tree layer of Magnolia grandiflora and a shrub layer of Photinia serrulata revealed an antibacterial effect of 47.1%. Thus, depending on the arrangement, antibacterial effect can improve the urban street-side environment in autumn and winter.

结果表明,秋季10月上旬不同植物群落均具有一定的抑菌作用;淮海西路处理2-5(乔木层为大叶榉树Zelkova schneideriana和雪松Cedrus deodara,灌木层为紫荆Cercis chinensis和黄杨Buxus sinica,地被为葱兰Zenhyranthes candida)和北京北路处理1-4(乔木层为广玉兰Magnolia grandiflora,灌木层为石楠Photinia serrulata)复层配置植物群落的抑菌效果最佳,抑菌率分别达51.93%和47.10%合理的植物群落配置的抑菌效果在秋冬季节对改善街道空气质量具有积极意义。

Corrosion layer of bronze relics consisted of red cuprite sub-layer, green carbonate mineral sub-layer and yellow stannolite sub-layer.

腐蚀层细分为红色赤铜矿层、绿色碳酸盐矿物层和黄色锡石层组成,其厚度小于1mm。

Thermal oxidation treatment can increase the surface hardness and elastic modulus significantly and reduce the E /H ratio of the TC4, which indicate the treatment can enhance the wear resistance of TC4 alloy. Long time treatment can increase the thickness of the oxide layer, but the outside layer is apt to desquamate during the scratching. The oxide layer closing to substrate has better bonding properties, but microcrack forms as a result of high stress loading, which lead the layer to flake off completely.

长时间的高温氧化可以增加氧化层的厚度,但在划擦过程中氧化层发生两次脱落,表明氧化层由外表层和次外层组成,外层结合力差,易发生一次脆性剥落,内层与基体的结合强度较高,但在较大载荷作用下会产生微裂纹,导致氧化层的二次剥落。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

During the high-voltage device design, the thick epitaxial layer LDMOS which is compatible with current technology was researched. This device used piecewise VLD and multiple region structure F reduce field layer. The using of the F reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the P layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge Qss.

在高压器件研究中对与现有工艺相兼容厚外延LDMOS进行研究,该结构采用分段变掺杂多区P~-降场层,有效降低器件的表面电场,缩短器件的漂移区长度,增大P~-降场层注入剂量的选择范围,并有效地抑制界面电荷Qss对器件耐压的不利影响。

The invention relates to distributivity phoneme communication system and network connecting method applied in residential district. It includes management layer, middle layer, and user layer. The management layer includes center monitoring controlling main engine and supervisor used to monitor, control, and supervise the whole system.

可应用于住宅小区的分布式语音通讯系统及网络连接方法,包括管理层、中间层和用户层;管理层,包含中央监控主机和管理机,负责整个系统的监控与管理;中间层,包含门口机,作为管理区域的辅助划分管理单位;用户层,包含用户机,负责与住户的交互。

In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

在一些实施方案中,渐变半导体缓冲层位于隐埋氧化物层下面,而在其他实施方案中,包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。

A typical representative of such a polymetal layer printing master blank contains a steel plate whereon a copper layer (7 to 10 μ thick) and a chromium layer (2 to 3 μ thick) with mat aspect are electrolytically deposited, which chromium layer in its turn is coated with the photosensitive coating suited for preparing the resist.

1991年参加过多金属层印刷主空白的典型代表,包含了钢板地上一铜层(7至10μ厚)和铬层(2至3μ厚垫方面)的电解沉积,反过来的铬层涂有准备的抵制适合光敏涂料。

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As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸,那乌黑、忧郁的眼睛,她便会相信,他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失

But because of its youthful corporate culture—most people are hustled out of the door in their mid-40s—it had no one to send.

但是因为该公司年轻的企业文化——大多数员工在40来岁的时候都被请出公司——一时间没有好的人选。